year = "1994",
doi = "10.1557/PROC-354-171",
URL = "http://dx.doi.org/10.1557/PROC-354-171",
- eprint = "http://journals.cambridge.org/article_S1946427400420853",
notes = "first time ibs at moderate temperatures",
}
notes = "c int diffusion barrier",
}
+@Article{haeberlen10,
+ title = "Structural characterization of cubic and hexagonal
+ Ga{N} thin films grown by {IBA}-{MBE} on Si{C}/Si",
+ journal = "Journal of Crystal Growth",
+ volume = "312",
+ number = "6",
+ pages = "762--769",
+ year = "2010",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "10.1016/j.jcrysgro.2009.12.048",
+ URL = "http://www.sciencedirect.com/science/article/pii/S0022024809011452",
+ author = "M. H{\"a}berlen and J. W. Gerlach and B. Murphy and J.
+ K. N. Lindner and B. Stritzker",
+}
+
@Article{ito04,
title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
application in buffer layer for Ga{N} epitaxial
notes = "cvd of 3c-sic on si, sic buffer layer",
}
+@Article{nagasawa06,
+ author = "H. Nagasawa and K. Yagi and T. Kawahara and N. Hatta",
+ title = "Reducing Planar Defects in 3{C}¿Si{C}",
+ journal = "Chemical Vapor Deposition",
+ volume = "12",
+ number = "8-9",
+ publisher = "WILEY-VCH Verlag",
+ ISSN = "1521-3862",
+ URL = "http://dx.doi.org/10.1002/cvde.200506466",
+ doi = "10.1002/cvde.200506466",
+ pages = "502--508",
+ keywords = "Defect structures, Epitaxy, Silicon carbide",
+ year = "2006",
+ notes = "cvd on si",
+}
+
@Article{nishino87,
author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
and Hiroyuki Matsunami",
Road 44135 Cleveland OH",
title = "Progress in silicon carbide semiconductor electronics
technology",
- journal = "Journal of Electronic Materials",
+ journal = "J. Electron. Mater.",
publisher = "Springer Boston",
ISSN = "0361-5235",
keyword = "Chemistry and Materials Science",
notes = "sic data, advantages of 3c sic",
}
+@InProceedings{pribble02,
+ author = "W. L. Pribble and J. W. Palmour and S. T. Sheppard and
+ R. P. Smith and S. T. Allen and T. J. Smith and Z. Ring
+ and J. J. Sumakeris and A. W. Saxler and J. W.
+ Milligan",
+ booktitle = "Microwave Symposium Digest, 2002 IEEE MTT-S
+ International",
+ title = "Applications of Si{C} {MESFET}s and Ga{N} {HEMT}s in
+ power amplifier design",
+ year = "2002",
+ month = "",
+ volume = "",
+ number = "",
+ pages = "1819--1822",
+ doi = "10.1109/MWSYM.2002.1012216",
+ ISSN = "",
+ notes = "hdtv",
+}
+
+@InProceedings{temcamani01,
+ author = "F. Temcamani and P. Pouvil and O. Noblanc and C.
+ Brylinski and P. Bannelier and B. Darges and J. P.
+ Prigent",
+ booktitle = "Microwave Symposium Digest, 2001 IEEE MTT-S
+ International",
+ title = "Silicon carbide {MESFET}s performances and application
+ in broadcast power amplifiers",
+ year = "2001",
+ month = "",
+ volume = "",
+ number = "",
+ pages = "641--644",
+ doi = "10.1109/MWSYM.2001.966976",
+ ISSN = "",
+ notes = "hdtv",
+}
+
+@Article{pensl00,
+ author = "Gerhard Pensl and Michael Bassler and Florin Ciobanu
+ and Valeri Afanas'ev and Hiroshi Yano and Tsunenobu
+ Kimoto and Hiroyuki Matsunami",
+ title = "Traps at the Si{C}/Si{O2}-Interface",
+ journal = "MRS Proc.",
+ volume = "640",
+ number = "",
+ pages = "",
+ year = "2000",
+ doi = "10.1557/PROC-640-H3.2",
+ URL = "http://dx.doi.org/10.1557/PROC-640-H3.2",
+}
+
@Article{bhatnagar93,
author = "M. Bhatnagar and B. J. Baliga",
journal = "Electron Devices, IEEE Transactions on",
year = "1994",
publisher = "Suhrkamp",
}
+
+@Misc{attenberger03,
+ author = "Wilfried Attenberger and Jörg Lindner and Bernd
+ Stritzker",
+ title = "A {method} {for} {forming} {a} {layered}
+ {semiconductor} {structure} {and} {corresponding}
+ {structure}",
+ year = "2003",
+ month = apr,
+ day = "24",
+ note = "WO 2003/034484 A3R4",
+ version = "A3R4",
+ howpublished = "Patent Application",
+ nationality = "WO",
+ filing_num = "EP0211423",
+ yearfiled = "2002",
+ monthfiled = "10",
+ dayfiled = "11",
+ pat_refs = "",
+ ipc_class = "7B 81C 1/00 B; 7H 01L 21/04 B; 7H 01L 21/265 B; 7H 01L
+ 21/322 B; 7H 01L 21/324 B; 7H 01L 21/74 A; 7H 01L
+ 21/762 B; 7H 01L 29/165 B; 7H 01L 33/00 B",
+ us_class = "",
+ abstract = "The following invention provides a method for forming
+ a layered semiconductor structure having a layer (5) of
+ a first semiconductor material on a substrate (1; 1')
+ of at least one second semiconductor material,
+ comprising the steps of: providing said substrate (1;
+ 1'); burying said layer (5) of said first semiconductor
+ material in said substrate (1; 1'), said buried layer
+ (5) having an upper surface (105) and a lower surface
+ (105) and dividing said substrate (1; 1') into an upper
+ part (1a) and a lower part (1b; 1b', 1c); creating a
+ buried damage layer (10; 10'; 10'', 100'') which at
+ least partly adjoins and/or at least partly includes
+ said upper surface (105) of said buried layer (5); and
+ removing said upper part (1a) of said substrate (1; 1')
+ and said buried damage layer (10; 10'; 10'', 100'') for
+ exposing said buried layer (5). The invention also
+ provides a corresponding layered semiconductor
+ structure.",
+}