}
%\hfill
}}
-\hfill\mbox{}\\[0.1cm]
+\hfill\mbox{}\\[0cm]
%\vspace*{1.3cm}
$\rightarrow$ {\bf amourphous} precipitates
\item $20 - 30\,\%$ lower silicon density of $a-SiC_x$ compared to $c-Si$\\
$\rightarrow$ {\bf lateral strain} (black arrows)
+\item implantation range near surface\\
+ $\rightarrow$ {\bf ralaxation} of {\bf vertical strain component}
\item reduction of the carbon supersaturation in $c-Si$\\
$\rightarrow$ {\bf carbon diffusion} into amorphous volumina
(white arrows)
-\item lateral strain (vertical component relaxating)\\
+\item remaining lateral strain\\
$\rightarrow$ {\bf strain induced} lateral amorphization
\end{itemize}
\end{kasten}
\subsubsection*{3.2.1 Amorphization/Recrystallization}
\begin{itemize}
- \item random numbers according to the nuclear
- energy loss to determine the volume hit
- by an impinging ion
+ \item random numbers distributed according to
+ the nuclear energy loss to determine the
+ volume hit by an impinging ion
\item compute local probability for
amorphization:\\
\[
\subsubsection*{3.2.2 Carbon incorporation}
\begin{itemize}
- \item random numbers according to the
- implantation profile to determine the
+ \item random numbers distributed according to
+ the implantation profile to determine the
incorporation volume
\item increase the amount of carbon atoms in
that volume
\makebox[11cm]{%
\parbox[c]{5cm}{%
\begin{itemize}
- \item multiple implantation \\ steps
+ \item multiple implantation\\
+ steps
\item energies: $180$ - $10 \, keV$
- \item higher temeprature\\
+ \item temeprature: $500 ^{\circ} \mathrm{C}$\\
$\rightarrow$ prevent amorphization
\end{itemize}
$\Rightarrow$ nearly constant carbon distribution
\begin{center}
\includegraphics[width=10cm]{multiple_impl_e.eps}
\end{center}
+ Starting point for materials with high photoluminescence.\\
+ Dihu Chen et al. Opt. Mater. 23 (2003) 65.
\end{kasten}
\begin{kasten}
- \section*{5 \hspace{0.1cm} {\color{red} Conclusions}}
+ \section*{5 \hspace{0.1cm} {\color{red} Conclusion}}
\begin{itemize}
\item selforganized nanometric precipitates by ion irradiation
\item model describing the seoforganization process
- \item precipitate structures traceable by simulation
+ \item set of parameters reproducing the experimental observations
+ \item precipitation process traceable by simulation
\item detailed structural/compositional information
\item recipe for broad distributions of lamellar structure
\end{itemize}