silicon carbide precipitation in silicon
by F. Zirkelbach, B. Stritzker, K. Nordlund, et al.
+and related to
+
+Re: BA11443
+ First-principles study of defects in carbon-implanted silicon
+ by F. Zirkelbach, B. Stritzker, J. K. N. Lindner, et al.
+
Dear Dr. Dahal,
The referee
- i) requests a clarification of the relation of the present
+ i) has reservations about the methodology used in the present work
+ ii) requests a clarification of the relation of the present
manuscript to a previous submission of ours (BA11443)
- ii) has reservations about the methodology used in the present work
iii) suggests to possibly combine some account of the present
work with the previous submission BA11443.
-What concerns (ii), the classical potential molecular dynamics used in
+What concerns (i), the classical potential molecular dynamics used in
the present work certainly has limitations. Precisely in order to
quantify these limitations, a comparison is made with ab initio
calculations as well as earlier first-principles work (BA11443).
accessible to more accurate ab initio techniques. A detailed response
to the referee's concerns is given below.
-Concerning (i) and (iii), the ab initio work BA11443 is a
+Concerning (ii) and (iii), the ab initio work BA11443 is a
self-contained and comprehensive manuscript, which already now has an
appreciable length. It is a first-principles study on defects in
carbon-implanted silicon. In contrast, the present study mainly