Although significant advances have been achieved in the field of SiC bulk crystal growth, a variety of problems remain.
The high temperatures required in PVT growth processes limit the range of materials used in the hot zones of the reactors, for which mainly graphite is used.
-The porous material constitutes a severe source of contamination, e.g. with the dopants N, B and Al, which is exceptionally effective at low temperatures due to the low growth rate.
+The porous material constitutes a severe source of contamination, e.g. with the dopants N, B and Al, which is particularly effective at low temperatures due to the low growth rate.
Since the vapor pressure of Si is much higher than that of C, a careful manipulation of the Si vapor content above the seed crystal is required.
Additionally, to preserve epitaxial growth conditions, graphitization of the seed crystal has to be avoided.
Avoiding defects constitutes a mojor difficulty.
\subsection{SiC epitaxial thin film growth}
+Crystalline SiC layers have been grown by a large number of techniques on the surfaces of different substrates.
+Most of the crystal growth processes are based on chemical vapor deposition (CVD), solid-source molecular beam epitaxy (MBE) and gas-source MBE on Si as well as SiC substrates, which will be exclusively reviewed in the following.
+
+The availability and reproducibility of Si substrates of controlled purity made it the first choice for SiC epitaxy.
+The heteroepitaxial growth of SiC on Si substrates has been stimulated for a long time due to the lack of suitable large substrates that could be adopted for homoepitaxial growth.
+Furthermore, heteroepitaxy on Si substrates enables the fabrication of the advantageous 3C polytype, which constitutes a metastable phase and, thus, can be grown as a bulk crystal only with small sizes of a few mm.
+
+
\section{Ion beam synthesis of cubic silicon carbide}
\section{Substoichiometric concentrations of carbon in crystalline silicon}
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