Further migration pathways, in particular those occupying other defect configurations than the \hkl<1 0 0>-type either as a transition state or a final or starting configuration, are totally conceivable.
This is investigated in the following in order to find possible migration pathways that have an activation energy lower than the ones found up to now.
The next energetically favorable defect configuration is the \hkl<1 1 0> C-Si DB interstitial.
Further migration pathways, in particular those occupying other defect configurations than the \hkl<1 0 0>-type either as a transition state or a final or starting configuration, are totally conceivable.
This is investigated in the following in order to find possible migration pathways that have an activation energy lower than the ones found up to now.
The next energetically favorable defect configuration is the \hkl<1 1 0> C-Si DB interstitial.