+
+ \vspace{4cm}
+
+ \small
+
+\begin{tabular}{l | c c c c c c}
+\hline
+ & 3C-SiC & 4H-SiC & 6H-SiC & Si & GaN & Diamond\\
+\hline
+Hardness [Mohs] & 9.6 & & & 6.5 & & 10 \\
+Band gap [eV] & 2.36 & 3.23 & 3.03 & 1.12 & 3.39 & 5.5 \\
+Break down field [$10^6$ V/cm] & & & & & & \\
+Saturation drift velocity [] & & & & & & \\
+Electron mobility [] & & & & & & \\
+Hole mobility [] & & & & & & \\
+Thermal conductivity [] & & & & & & \\
+\hline
+\end{tabular}
+
+\begin{picture}(0,0)(-160,-155)
+ \includegraphics[width=7cm]{polytypes.eps}
+\end{picture}
+
+\end{slide}
+
+\begin{slide}
+
+ {\large\bf
+ Fabrication of silicon carbide
+ }
+
+ \small