finished sic ssmbe (hopefully!)

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 97c81b83117da95d3f4dc5a897f7b339a4811bec..b10d7133ba43246319b2ce4f35b6e4ab81ab85e6 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -1952,6 +1952,23 @@
   notes =        "3c-sic on 6h-sic, cvd, reduced temperature",
 }
 
+@Article{kaneda87,
+  title =        "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
+                 properties of its p-n junction",
+  journal =      "Journal of Crystal Growth",
+  volume =       "81",
+  number =       "1-4",
+  pages =        "536--542",
+  year =         "1987",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(87)90449-0",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
+  author =       "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
+                 and Takao Tanaka",
+  notes =        "first time ssmbe of 3c-sic on 6h-sic",
+}
+
 @Article{fissel95,
   title =        "Epitaxial growth of Si{C} thin films on Si-stabilized
                  [alpha]-Si{C}(0001) at low temperatures by solid-source

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index b241efa077f9e7d83acfcb005d25d3fa74804103..81c6a1d8f2b27511661703becdba24a908f12e94 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -207,11 +207,10 @@ Depending on the gas flow ratio either 3C island formation or step flow growth o
 Due to the strong adsorption of atomic hydrogen \cite{allendorf91} decomposited of the gas phase reactants at low temperatures, however, there seems to be no benefit of GSMBE compared to CVD.
 Next to lattice imperfections, incorporated hydrogen effects the surface mobility of the adsorbed species \cite{eaglesham93} setting a minimum limit for the growth temperature, which would preferably be further decreased in order to obtain sharp doping profiles.
 Thus, growth rates must be adjusted to be lower than the desorption rate of hydrogen, which leads to very low deposition rates at low temperatures.
-Solid source MBE (SSMBE) may constitute the preffered method to avoid these problems.
-Realized on and off-axis 3C on 4H and ... \cite{fissel95,fissel95_apl} ...
-Nonstoichiometric reconstruction plays a relevenat role ... handled by Si/C flux ratio ... \cite{fissel96,righi03} ...
-change in adlayer thickness and, consequently, in the surface super structure leading to growth of another polytype \cite{fissel95} ...
-Possibility to grow heterostructures (band gap engineering) by careful control of the Si/C ratio and Si excess.
+Solid source MBE (SSMBE), supplying the atomic species to be deposited by evaporation of a solid, presumably constitutes the preffered method in order to avoid the problems mentioned above.
+Although, in the first experiments, temperatures still above \unit[1100]{$^{\circ}$C} were necessary to epitaxially grow 3C-SiC films on 6H-SiC substrates \cite{kaneda87}, subsequent attempts succeeded in growing mixtures of twinned 3C-SiC and 6H-SiC films on off-axis \hkl(0001) 6H-SiC wafers at temperatures between \unit[800]{$^{\circ}$C} and \unit[1000]{$^{\circ}$C} \cite{fissel95,fissel95_apl}.
+In the latter approach, as in GSMBE, excess Si atoms, which are controlled by the Si/C flux ratio, result in the formation of a Si adlayer and the formation of a non-stoichiometric, reconstructed surface superstructure, which influences the mobility of adatoms and, thus, has a decisive influence on the growth mode, polytype and crystallinity \cite{fissel95,fissel96,righi03}.
+Therefore, carefully controlling the Si/C ratio could be exploited to obtain definite heterostructures of different SiC polytypes providing the possibility for band gap engineering in SiC materials.
 
 To summarize ... remaining obstacles are ... APB in 3C ... and micropipes in hexagonal SiC?