more bc conf

diff --git a/posic/thesis/defects.tex b/posic/thesis/defects.tex
index 1e37879394067fdc45041e1059f03d2f45b3e90e..afaaf80f3d0bb76b39d9ba0b43646e2dbb69dcfc 100644 (file)
--- a/posic/thesis/defects.tex
+++ b/posic/thesis/defects.tex
@@ -245,7 +245,7 @@ $\Rightarrow$
 \end{minipage}
 \begin{minipage}{4cm}
 \underline{\hkl<1 0 0>}\\
-$E_{\text{f}}=3.96\text{ eV}$\\
+$E_{\text{f}}=3.88\text{ eV}$\\
 \includegraphics[width=4.0cm]{c_pd_albe/100.eps}
 \end{minipage}
 \begin{minipage}{0.5cm}
@@ -418,23 +418,48 @@ The distance of the two dumbbell atoms is almost the same for both types of calc
 However, in the case of the VASP calculation, the dumbbell structure is pushed upwards compared to the Erhard/Albe results.
 This is easily identified by comparing the values for $a$ and $b$ and the two structures in figure \ref{fig:defects:100db_vis_cmp}.
 Thus, the angles of bonds of the silicon dumbbell atom ($\theta_1$ and $\theta_2$) are closer to $120^{\circ}$ signifying the predominance of $sp^2$ hybridization.
-On the other hand, the carbon atom forms an almost collinear bond ($\theta_3$) with the two silicon edge atoms implying the predominance of $p$ and $sp$ bonding.
+On the other hand, the carbon atom forms an almost collinear bond ($\theta_3$) with the two silicon edge atoms implying the predominance of $sp$ bonding.
 This is supported by the image of the charge density isosurface in figure \ref{img:defects:charge_den_and_ksl}.
+The two lower Si atoms are $sp^3$ hybridised and form $\sigma$ bonds to the silicon dumbbell atom.
+The same is true for the upper two silicon atoms and the C dumbbell atom.
+In addition the dumbbell atoms form $\pi$ bonds.
+However, due to the increased electronegativity of the carbon atom the electron density is attracted by and thus localized around the carbon atom.
 In the same figure the Kohn-Sham levels are shown.
 There is no magnetization density.
-An acceptor level arises resulting in a band gap of 0.35 eV compared to 0.75 eV as obtained for plain silicon.
+An acceptor level arises at approximately $E_v+0.35\text{ eV}$ while a band gap of about 0.75 eV can be estimated from the Kohn-Sham level diagram for plain silicon.
 
 \subsection{Bond-centered interstitial configuration}
 \label{subsection:bc}
 
-In the bond-centerd insterstitial configuration the interstitial atom is located inbetween two next neighboured silicon atoms.
-In former studies this configuration is found to be an intermediate saddle point configuration determining the migration barrier of one possibe migration path of a \hkl<1 0 0> dumbbel configuration into another one \cite{capaz94}.
-Hier ist es aber ein echtes Minimum.
-Eine 'weitere' Barriere muss ueberschritten werden um dahin zu kommen.
-Genaueres in section \ref{subsection:100mig}.
-Die Konfiguration besitzt ein magnetisches Moment.
-Bild der spin-ladungen.
-
+\begin{figure}[h]
+\begin{center}
+\begin{minipage}{8cm}
+\includegraphics[width=8cm]{c_pd_vasp/bc_2333.eps}\\
+\hrule
+\vspace*{0.2cm}
+\includegraphics[width=8cm]{c_100_mig_vasp/im_spin_diff.eps}
+\end{minipage}
+\begin{minipage}{7cm}
+\includegraphics[width=7cm]{c_pd_vasp/bc_2333_ksl.ps}
+\end{minipage}
+\end{center}
+\caption[Structure, charge density isosurface and Kohn-Sham level diagram of the bond-centered interstitial configuration.]{Structure, charge density isosurface and Kohn-Sham level diagram of the bond-centered interstitial configuration. Gray, green and blue surfaces mark the charge density of spin up, spin down and the resulting spin up electrons in the charge density isosurface, in which the carbon atom is represented by a red sphere. In the energy level diagram red and green lines mark occupied and unoccupied states.}
+\label{img:defects:bc_conf}
+\end{figure}
+In the bond-centerd insterstitial configuration the interstitial atom is located inbetween two next neighboured silicon atoms forming linear bonds.
+In former studies this configuration is found to be an intermediate saddle point configuration determining the migration barrier of one possibe migration path of a \hkl<1 0 0> dumbbel configuration into an equivalent one \cite{capaz94}.
+This is in agreement with results of the Erhard/Albe potential simulations which reveal this configuration to be unstable relaxing into the \hkl<1 1 0> configuration.
+However, this fact could not be reproduced by spin polarized VASP calculations performed in this work.
+Present results suggest this configuration to be a real local minimum.
+In fact, an additional barrier has to be passed to reach this configuration starting from the \hkl<1 0 0> interstitital configuration, which is investigated in section \ref{subsection:100mig}.
+The carbon atom has been displaced along the axes ... relaxation back ... indicating a real local minimum.
+Figure \ref{img:defects:bc_conf} shows the structure, the charge density isosurface and the Kohn-Sham levels of the bond-centered configuration.
+The linear bonds of the carbon atom to the two silicon atoms indicate the $sp$ hybridization of the carbon atom.
+Two electrons participate to the linear $\sigma$ bonds with the silicon neighbours.
+The other two electrons constitute the $2p^2$ orbitals resulting in a net magnetization.
+This is supported by the charge density isosurface and the Kohn-Sham levels in figure \ref{img:defects:bc_conf}.
+The blue torus, reinforcing the assumption of the p orbital, illsutrates the resulting spin up electron density.
+In addition, the energy level diagram shows a net amount of two spin up electrons.
 
 \section[Migration of the carbon \hkl<1 0 0> interstitial]{\boldmath Migration of the carbon \hkl<1 0 0> interstitial}
 \label{subsection:100mig}