nicht viel, aber etwas!

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index b0e716ca40232b5230d6db8f03444d56bed39dfa..42a095fe85cb413cc8598e2af492cd1e12008477 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -1279,7 +1279,7 @@
   notes =        "gan on 3c-sic",
 }
 
-@Article{liu02,
+@Article{liu_l02,
   title =        "Substrates for gallium nitride epitaxy",
   journal =      "Materials Science and Engineering: R: Reports",
   volume =       "37",
@@ -3022,10 +3022,6 @@
   doi =          "DOI: 10.1016/S0168-583X(00)00542-5",
   URL =          "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
   author =       "W. J. Weber and W. Jiang and S. Thevuthasan",
-  keywords =     "Amorphization",
-  keywords =     "Irradiation effects",
-  keywords =     "Thermal recovery",
-  keywords =     "Silicon carbide",
 }
 
 @Article{bockstedte03,

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index 46be2b5bfda27acfb39ff6dddd79b35827a6c83a..5047308a29d74edbec8f268bf4a6954b9505d097 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -59,25 +59,34 @@ Some of the key properties are listed in Table~\ref{table:sic:properties} and co
 Despite the lower charge carrier mobilities for low electric fields SiC outperforms Si concerning all other properties.
 The wide band gap, large breakdown field and high saturation drift velocity make SiC an ideal candidate for high-temperature, high-power and high-frequency electronic devices exhibiting high efficiency.
 In addition the high thermal conductivity enables the implementation of small-sized electronic devices enduring increased power densites.
+
+Negligible junction leakage currents at elevated temperatures due to the high band gap allow high-temperature operations without excessive leakage.
+Even non-volatile dynamic random access memory (DRAM) at room temperature can generally be realized by SiC based electronics~\cite{}.
+Additionally the wide band gap allows SiC to be used in UV detectors.
+The high saturation electron drift velocity provides higher currents and higher cut-off frequencies for SiC based high-frequency and high-power devices, such as microwave devices.
+The high breakdown strength enables the realization of electronic switching devices enduring high power densities.
+The high thermal conductivity permits ...
+
 Despite high-temperature operations the wide band gap also allows the use of SiC in optoelectronic devices.
 Indeed, a forgotten figure, Oleg V. Losev discovered what we know as the light emitting diode (LED) today in the mid 1920s by observing light emission from SiC crystal rectifier diodes used in radio receivers when a current was passed through them~\cite{losev27}.
 Apparently not known to Losev, Henry J. Round published a small note~\cite{round07} reporting a bright glow from a SiC diode already in 1907.
 However, it was Losev who continued his studies providing comprehensive knowledge on light emission of SiC (entitled luminous carborundum) and its relation to diode action~\cite{losev28,losev29,losev31,losev33} constituting the birth of solid-state optoelectronics.
 And indeed, the first significant blue LEDs reinvented at the start of the 1990s were based on SiC.
 Due to the indirect band gap and, thus, low light emitting efficiency, however, it is nowadays replaced by GaN and InGaN based diodes.
-However, even for GaN based diodes SiC turns out to be of great importance since it constitutes an ideal substrate material for GaN epitaxial layer growth~\ref{liu02}.
-In doing so, the 3C polytype promises good quality, single crystalline GaN films~\ref{takeuchi91,yamamoto04,ito04}.
+However, even for GaN based diodes SiC turns out to be of great importance since it constitutes an ideal substrate material for GaN epitaxial layer growth~\cite{liu_l02}.
+Especially substrates of the 3C polytype promise good quality, single crystalline GaN films~\cite{takeuchi91,yamamoto04,ito04}.
 
 
 Focus on ... key ... to high efficiency
 
-The wide band gap ... light emitting diodes ... first blue led ... but GaN direct band gap semiconductor ...
-However ... combine all electr properties ... high-* .. .devices diodes, inverters ... 
-break down field and high thermal conductivity ... high-densea and high-power ...
+inverters and rectifieres based on SiC schottky 
+
 high saturation drift velocity high-frequency ...
 Mechanical stability almost like diamond ...
 Chemical inert, low neutron capture foobar ... radiation hardness
 
+isotropic properties ...
+
 Since in this work 3C-SiC unit cell ... two fcc lattices ...