starting epi growth

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index c0c26e9c3b5d71de4f004c851a38e8931a6f78fe..37dc288bab5bef124a2350c32759ea4f94348743 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -2386,6 +2386,19 @@
                  metastable",
 }
 
+@Article{chaussende07,
+  author =       "D. Chaussende and P. J. Wellmann and M. Pons",
+  title =        "Status of Si{C} bulk growth processes",
+  journal =      "Journal of Physics D: Applied Physics",
+  volume =       "40",
+  number =       "20",
+  pages =        "6150",
+  URL =          "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
+  year =         "2007",
+  notes =        "review of sic single crystal growth methods, process
+                 modelling",
+}
+
 @Article{feynman39,
   title =        "Forces in Molecules",
   author =       "R. P. Feynman",

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index b6e17d1a5546865e49401ffe11499050498966e3..3514066d8925dff2f3eaae09c762e91fac7ec4f1 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -142,7 +142,7 @@ This refined versions of the physical vapor transport (PVT) technique enabled th
 
 Although significant advances have been achieved in the field of SiC bulk crystal growth, a variety of problems remain.
 The high temperatures required in PVT growth processes limit the range of materials used in the hot zones of the reactors, for which mainly graphite is used.
-The porous material constitutes a severe source of contamination, e.g. with the dopants N, B and Al, which is exceptionally effective at low temperatures due to the low growth rate.
+The porous material constitutes a severe source of contamination, e.g. with the dopants N, B and Al, which is particularly effective at low temperatures due to the low growth rate.
 Since the vapor pressure of Si is much higher than that of C, a careful manipulation of the Si vapor content above the seed crystal is required.
 Additionally, to preserve epitaxial growth conditions, graphitization of the seed crystal has to be avoided.
 Avoiding defects constitutes a mojor difficulty.
@@ -152,6 +152,11 @@ Further efforts have to be expended to find relations between the growth paramet
 
 \subsection{SiC epitaxial thin film growth}
 
+Crystalline SiC layers have been grown by a large number of techniques on the surfaces of different substrates.
+Most of the crystal growth processes are based on chemical vapor deposition (CVD), solid-source molecular beam epitaxy (MBE) and gas-source MBE on Si as well as SiC substrates, which will be exclusively reviewed in the following.
+
+
+
 \section{Ion beam synthesis of cubic silicon carbide}
 
 \section{Substoichiometric concentrations of carbon in crystalline silicon}