ibs stuff

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index 77e41a2da6b60971bb2ebec2dfd1fa6b8b667c7d..dbc45762a621718d873c57019c0f16ddc503e0b2 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -220,9 +220,14 @@ Solving this issue remains a challenging problem necessary to drive SiC for pote
 
 Although tremendous progress has been achieved in the above-mentioned growth methods during the last decades, available wafer dimensions and crystal qualities are not yet statisfactory.
 Thus, alternative approaches to fabricate SiC have been explored.
+The \ac{IBS} technique, i.e. high-dose ion implantation followed by a high-temperature annealing step, turned out to constitute a promising method to directly form compound layers of high purity and accurately controllable depth and stoichiometry.
+A short chronological summary of the \ac{IBS} of SiC and its origins is presented in the following.
 
 High-dose carbon implantation into \ac{c-Si} with subsequent or in situ annealing was found to result in SiC microcrystallites in Si \cite{borders71}.
-\ac{RBS} and \ac{IR} spectroscopy investigations indicate a \unit[10]{at.\%} C concentration peak and the occurence of disordered C-Si bonds after implantation at room temperature followed by crystallization into SiC precipitates upon annealing demonstrated by a shift in the \ac{IR} absorption band and the disappearance of the C profile peak in \ac{RBS}.
+\ac{RBS} and \ac{IR} spectroscopy investigations indicate a \unit[10]{at.\%} C concentration peak and the occurence of disordered C-Si bonds after implantation at \ac{RT} followed by crystallization into SiC precipitates upon annealing demonstrated by a shift in the \ac{IR} absorption band and the disappearance of the C profile peak in \ac{RBS}.
+Implantations at different temperatures revealed a strong influences of the implantation temperature on the compound structure \cite{edelman76}.
+Temperatures below \unit[500]{$^{\circ}$C} result in amorphous layers, which is transformed into polycrystalline 3C-SiC after \unit[850]{$^{\circ}$C} annealing \cite{edelman76}.
+Otherwise single crystalline 3C-SiC is observed for temperatures above \unit[600]{$^{\circ}$C}.
 
 Utilized and enhanced, 30 years devel ... (-32)
 By understanding some basci processes (32-36), \ac{IBS} nowadays has become a promising method to form thin SiC layers of high quality exclusively of the 3C polytype embedded in and epitactically aligned to the Si host featuring a sharp interface \cite{lindner99,lindner01,lindner02}.