\includegraphics[width=3cm]{si_pd_vasp/vac_2333.eps}\\
\underline{\hkl<1 1 0> interstitial}
\begin{itemize}
- \item $E_{\text{f}}=3.63\text{ eV}$
+ \item $E_{\text{f}}=3.39\text{ eV}$
\end{itemize}
- %\includegraphics[width=3cm]{si_pd_vasp/vac_2333.eps}
- in progress
+ \includegraphics[width=3cm]{si_pd_vasp/110_2333.eps}
\end{minipage}
\begin{minipage}{4.5cm}
\begin{center}
\end{minipage}
\begin{minipage}{4.5cm}
\begin{center}
- %\includegraphics[height=8cm]{si_pd_vasp/vac_2333_ksl.ps}
- in progress
+ \includegraphics[height=8cm]{si_pd_vasp/110_2333_ksl.ps}
{\scriptsize \hkl<1 1 0> interstitial}
\end{center}
\end{minipage}
\end{slide}
+\begin{slide}
+
+ {\large\bf\boldmath
+ Silicon point defects
+ }
+
+ \begin{minipage}{3.1cm}
+ \underline{Hexagonal}
+ \begin{itemize}
+ \item $E_{\text{f}}=3.42\text{ eV}$
+ \end{itemize}
+ \includegraphics[width=3cm]{si_pd_vasp/hex_2333.eps}\\
+ \underline{Tetrahedral}
+ \begin{itemize}
+ \item $E_{\text{f}}=3.77\text{ eV}$
+ \end{itemize}
+ \includegraphics[width=3cm]{si_pd_vasp/tet_2333.eps}
+ \end{minipage}
+ \begin{minipage}{3.7cm}
+ \begin{center}
+ \includegraphics[height=8cm]{si_pd_vasp/hex_2333_ksl.ps}\\
+ {\scriptsize Hexagonal}
+ \end{center}
+ \end{minipage}
+ \begin{minipage}{3.7cm}
+ \begin{center}
+ \includegraphics[height=8cm]{si_pd_vasp/tet_2333_ksl.ps}
+ {\scriptsize Tetrahedral}
+ \end{center}
+ \end{minipage}
+ \begin{minipage}[c]{0.1cm}
+ \hfill
+ \end{minipage}
+ \begin{minipage}[c]{1.9cm}
+{\tiny
+\underline{Energy - Occup.}\\
+5.5063 - 0.32840\\
+5.5064 - 0.32793\\
+5.5064 - 0.32764\\
+5.5777 - 0.00691\\
+5.5777 - 0.00691\\
+5.6031 - 0.00074\\
+5.6031 - 0.00074\\
+5.6035 - 0.00071\\
+5.6357 - 0.00002\\
+5.6453 - 0.00001\\
+5.6453 - 0.00001
+}
+ \end{minipage}
+
+\end{slide}
+
\begin{slide}
{\large\bf\boldmath
\hline
& 2 & 3 & 4 \\
\hline
-\hkl<0 0 -1> & 6.23 & 5.16 & \\
+\hkl<0 0 -1> & 6.23 & 5.16 & 6.23 \\
\hline
-\hkl<0 0 1> & 6.64 & 6.31 & \\
+\hkl<0 0 1> & 6.64 & 6.31 & ... \\
\hline
-\hkl<1 0 0> & 4.06 & 6.13 & \\
+\hkl<1 0 0> & 4.06 & 6.13 & ... \\
\hline
-\hkl<-1 0 0> & - & 4.41 & \\
+\hkl<-1 0 0> & as \hkl<0 -1 0> & 4.41 & ... \\
\hline
-\hkl<0 1 0> & - & 5.95 & \\
+\hkl<0 1 0> & as \hkl<1 0 0> & 5.95 & as \hkl<-1 0 0> \\
\hline
-\hkl<0 -1 0> & 3.92 & ... & \\
+\hkl<0 -1 0> & 3.92 & ... & as \hkl<1 0 0>\\
\hline
\end{tabular}
\end{slide}
+\begin{slide}
+
+ {\large\bf
+ Brainstorming: Point defects in Si (as grown and as implanted)
+ }
+
+ \small
+
+ Supercell size: $2$ - $2000 \cdot 10^{-21}\text{ cm}^3$
+
+ \underline{After crystal growth}
+ \begin{itemize}
+ \item Si point defects at $450\, ^{\circ}\text{C}$
+ \begin{itemize}
+ \item Interstitials:
+ \item Vacancies:
+ \end{itemize}
+ \item C impurities: $10^{17}\text{ cm}^{-3}$\\
+ $\Rightarrow$ $10^{-4}$ -- $10^{-1}$ per sc
+ $\rightarrow$ neglected in simulations
+ \end{itemize}
+
+ \underline{After/during implantation}
+ \begin{itemize}
+ \item Si point defects\\
+ $E_{\text{d}}^{\text{av}}=35\text{ eV}$,
+ $D_{\text{imp}}=1\text{ -- }4 \cdot 10^{17}\text{ cm }^{-2}$,
+ $d_{\text{sc}}=3\text{ -- }30\cdot 4.38\text { \AA}$,
+ $A=(3\text{ -- }30\text{ \AA})^2$,\\
+ Amount of collisions with $\Delta E > E_{\text{d}}$
+ in depth region $[h,h+d_{\text{sc}}]$: $n=$ .. (SRIM)\\
+ $\Rightarrow N_{\text{FP}}=nAD$
+ \item C point defects
+ \begin{itemize}
+ \item Substitutional C: ...
+ \item Intesrtitial C: ...
+ \end{itemize}
+ \end{itemize}
+
+\end{slide}
+
\begin{slide}
{\large\bf