added patent

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index fe532d22fb55c995d66a6e5be0f258e84f84cef2..e575307a37bc3301e89a5c2ef13f34714a2bd625 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -5160,3 +5160,47 @@
   year =         "1994",
   publisher =    "Suhrkamp",
 }
+
+% Generated at www.see-out.com/sandramau/bibpat.html on on 19/09/11 03:57:45 CDT
+@Misc{ATTENBERGER:2003:misc,
+  author =       "Wilfried ATTENBERGER and Jörg LINDNER and Bernd
+                 STRITZKER",
+  title =        "A {METHOD} {FOR} {FORMING} {A} {LAYERED}
+                 {SEMICONDUCTOR} {STRUCTURE} {AND} {CORRESPONDING}
+                 {STRUCTURE}",
+  year =         "2003",
+  month =        apr,
+  day =          "24",
+  note =         "WO 2003/034484 A3R4",
+  version =      "A3R4",
+  howpublished = "Patent Application",
+  nationality =  "WO",
+  URL =          "http://www.patentlens.net/patentlens/patent/WO_2003_034484_A3R4/en/",
+  filing_num =   "EP0211423",
+  yearfiled =    "2002",
+  monthfiled =   "10",
+  dayfiled =     "11",
+  pat_refs =     "",
+  ipc_class =    "7B 81C 1/00 B; 7H 01L 21/04 B; 7H 01L 21/265 B; 7H 01L
+                 21/322 B; 7H 01L 21/324 B; 7H 01L 21/74 A; 7H 01L
+                 21/762 B; 7H 01L 29/165 B; 7H 01L 33/00 B",
+  us_class =     "",
+  abstract =     "The following invention provides a method for forming
+                 a layered semiconductor structure having a layer (5) of
+                 a first semiconductor material on a substrate (1; 1')
+                 of at least one second semiconductor material,
+                 comprising the steps of: providing said substrate (1;
+                 1'); burying said layer (5) of said first semiconductor
+                 material in said substrate (1; 1'), said buried layer
+                 (5) having an upper surface (105) and a lower surface
+                 (105) and dividing said substrate (1; 1') into an upper
+                 part (1a) and a lower part (1b; 1b', 1c); creating a
+                 buried damage layer (10; 10'; 10'', 100'') which at
+                 least partly adjoins and/or at least partly includes
+                 said upper surface (105) of said buried layer (5); and
+                 removing said upper part (1a) of said substrate (1; 1')
+                 and said buried damage layer (10; 10'; 10'', 100'') for
+                 exposing said buried layer (5). The invention also
+                 provides a corresponding layered semiconductor
+                 structure.",
+}