new si/sic interface stuff

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 5c711f6bd4382c7a9f5c93161d08708e3c3e012a..2b36164a4cbdbdf18f317d6f08141dd2f67667db 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -1077,8 +1077,25 @@
                  monocrystals",
   URL =          "http://link.aip.org/link/?APL/42/460/1",
   doi =          "10.1063/1.93970",
-  notes =        "cvd of 3c-sic on si, first time carbonization, sic
-                 buffer layer",
+  notes =        "cvd of 3c-sic on si, sic buffer layer",
+}
+
+@Article{nishino:4889,
+  author =       "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
+                 and Hiroyuki Matsunami",
+  collaboration = "",
+  title =        "Epitaxial growth and electric characteristics of cubic
+                 Si{C} on silicon",
+  publisher =    "AIP",
+  year =         "1987",
+  journal =      "Journal of Applied Physics",
+  volume =       "61",
+  number =       "10",
+  pages =        "4889--4893",
+  URL =          "http://link.aip.org/link/?JAP/61/4889/1",
+  doi =          "10.1063/1.338355",
+  notes =        "cvd of 3c-sic on si, sic buffer layer, first time
+                 carbonization",
 }
 
 @Article{powell87,
@@ -1771,3 +1788,65 @@
   notes =        "nc-si in sio2, interface energy, nc construction,
                  angular distribution, coordination",
 }
+
+@Article{wen:073522,
+  author =       "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
+                 W. Liang and J. Zou",
+  collaboration = "",
+  title =        "Nature of interfacial defects and their roles in
+                 strain relaxation at highly lattice mismatched
+                 3{C}-Si{C}/Si (001) interface",
+  publisher =    "AIP",
+  year =         "2009",
+  journal =      "Journal of Applied Physics",
+  volume =       "106",
+  number =       "7",
+  eid =          "073522",
+  numpages =     "8",
+  pages =        "073522",
+  keywords =     "anelastic relaxation; crystal structure; dislocations;
+                 elemental semiconductors; semiconductor growth;
+                 semiconductor thin films; silicon; silicon compounds;
+                 stacking faults; wide band gap semiconductors",
+  URL =          "http://link.aip.org/link/?JAP/106/073522/1",
+  doi =          "10.1063/1.3234380",
+  notes =        "sic/si interface, follow refs",
+}
+
+@Article{kitabatake93,
+  author =       "Makoto Kitabatake and Masahiro Deguchi and Takashi
+                 Hirao",
+  collaboration = "",
+  title =        "Simulations and experiments of Si{C} heteroepitaxial
+                 growth on Si(001) surface",
+  publisher =    "AIP",
+  year =         "1993",
+  journal =      "Journal of Applied Physics",
+  volume =       "74",
+  number =       "7",
+  pages =        "4438--4445",
+  keywords =     "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
+                 BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
+                 MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
+  URL =          "http://link.aip.org/link/?JAP/74/4438/1",
+  doi =          "10.1063/1.354385",
+  notes =        "mbe and md of sic growth on si, 4 to 5 shrinkage
+                 model, interface",
+}
+
+@Article{pizzagalli03,
+  title =        "Theoretical investigations of a highly mismatched
+                 interface: Si{C}/Si(001)",
+  author =       "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
+                 Catellani",
+  journal =      "Phys. Rev. B",
+  volume =       "68",
+  number =       "19",
+  pages =        "195302",
+  numpages =     "10",
+  year =         "2003",
+  month =        nov,
+  doi =          "10.1103/PhysRevB.68.195302",
+  publisher =    "American Physical Society",
+  notes =        "tersoff md and ab initio sic/si interface study",
+}