small changes to abstract

diff --git a/posic/publications/sic_prec_merge.tex b/posic/publications/sic_prec_merge.tex
index 9743fb23e822a91de4548dc9d038e1b2d32f3f02..f0b85a20338cd2f95201308fe15228a3c5e3b183 100644 (file)
--- a/posic/publications/sic_prec_merge.tex
+++ b/posic/publications/sic_prec_merge.tex
@@ -36,7 +36,8 @@
 
 \begin{abstract}
 Atomistic simulations on the silicon carbide precipitation in bulk silicon employing both, classical potential and first-principles methods are presented.
-These aime to clarify a controversy concerning the precipitation mechanism as revealed from literature.
+%These aime to clarify a controversy concerning the precipitation mechanism as revealed from literature.
+The calculations aim at a comprehensive, microscopic understanding of the precipitation mechanism in the context of controversial discussions in the literature.
 %
 For the quantum-mechanical treatment, basic processes assumed in the precipitation process are calculated in feasible systems of small size.
 The migration mechanism of a carbon \hkl<1 0 0> interstitial and silicon \hkl<1 1 0> self-interstitial in otherwise defect-free silicon using density functional theory calculations are investigated.
@@ -47,6 +48,7 @@ The formation of structures involving strong carbon-carbon bonds turns out to be
 In contrast, substitutional carbon occurs in all probability.
 A long range capture radius has been observed for pairs of interstitial carbon as well as interstitial carbon and vacancies.
 A rather small capture radius is predicted for substitutional carbon and silicon self-interstitials.
+%
 We derive conclusions on the precipitation mechanism of silicon carbide in bulk silicon and discuss conformability to experimental findings.
 %
 Furthermore, results of the accurate first-principles calculations on defects and carbon diffusion in silicon are compared to results of classical potential simulations revealing significant limitations of the latter method.