c sub and si i

diff --git a/posic/talks/mpi_app.tex b/posic/talks/mpi_app.tex
index 2bf8383fd95ba5a487e0f7f27062a15681b7daf9..9f6ceb70aebf3a8fb74df8e4cd4038492865a27c 100644 (file)
--- a/posic/talks/mpi_app.tex
+++ b/posic/talks/mpi_app.tex
@@ -1741,123 +1741,76 @@ Interaction along \hkl[1 1 0]
 
 \end{slide}
 
-% continue here
-\fi
-
 \begin{slide}
 
+\headphd
 {\large\bf
- Defect combinations
+ Defect combinations of C-Si dimers and vacancies
 }
-
 \footnotesize
 
-\vspace{0.1cm}
+\vspace{0.2cm}
 
-{\bf Combinations of \ci{} \hkl[0 0 -1] and a vacancy}\\
-\begin{minipage}[t]{3cm}
-\underline{Pos 2, $E_{\text{b}}=-0.59\text{ eV}$}\\
-\includegraphics[width=2.8cm]{00-1dc/0-59.eps}
+\begin{minipage}[b]{2.6cm}
+\begin{flushleft}
+\underline{V at 2: $E_{\text{b}}=-0.59\text{ eV}$}\\[0.1cm]
+\includegraphics[width=2.5cm]{00-1dc/0-59.eps}
+\end{flushleft}
 \end{minipage}
-
-
-
-\begin{minipage}[t]{7cm}
-\vspace{0.2cm}
-\begin{center}
- Low activation energies\\
- High activation energies for reverse processes\\
- $\Downarrow$\\
- {\color{blue}C$_{\text{sub}}$ very stable}\\
-\vspace*{0.1cm}
- \hrule
-\vspace*{0.1cm}
- Without nearby \hkl<1 1 0> Si self-interstitial (IBS)\\
- $\Downarrow$\\
- {\color{blue}Formation of SiC by successive substitution by C}
-\end{center}
+\begin{minipage}[b]{7cm}
+\hfill
 \end{minipage}
+\begin{minipage}[b]{2.6cm}
+\begin{flushright}
+\underline{V at 3, $E_{\text{b}}=-3.14\text{ eV}$}\\[0.1cm]
+\includegraphics[width=2.5cm]{00-1dc/3-14.eps}
+\end{flushright}
+\end{minipage}\\[0.2cm]
 
-
-\begin{minipage}[t]{3cm}
-\underline{Pos 3, $E_{\text{b}}=-3.14\text{ eV}$}\\
-\includegraphics[width=2.8cm]{00-1dc/3-14.eps}
+\begin{minipage}{6.5cm}
+\includegraphics[width=6.0cm]{059-539.ps}
+\end{minipage}
+\begin{minipage}{5.7cm}
+\includegraphics[width=6.0cm]{314-539.ps}
 \end{minipage}
 
+\begin{pspicture}(0,0)(0,0)
+\psline[linewidth=0.05cm,linecolor=gray](6.3,9.0)(6.3,0)
 
-\framebox{
-\begin{minipage}{5.9cm}
-\includegraphics[width=5.9cm]{vasp_mig/comb_mig_3-2_vac_fullct.ps}\\[0.6cm]
+\rput(6.3,7.0){\rnode{init}{\psframebox[fillstyle=solid,fillcolor=white,linewidth=0.05cm,linecolor=gray]{
+\begin{minipage}{6.5cm}
 \begin{center}
-\begin{picture}(0,0)(70,0)
-\includegraphics[width=1.4cm]{vasp_mig/comb_2-1_init.eps}
-\end{picture}
-\begin{picture}(0,0)(30,0)
-\includegraphics[width=1.4cm]{vasp_mig/comb_2-1_seq_03.eps}
-\end{picture}
-\begin{picture}(0,0)(-10,0)
-\includegraphics[width=1.4cm]{vasp_mig/comb_2-1_seq_06.eps}
-\end{picture}
-\begin{picture}(0,0)(-48,0)
-\includegraphics[width=1.4cm]{vasp_mig/comb_2-1_final.eps}
-\end{picture}
-\begin{picture}(0,0)(12.5,5)
-\includegraphics[width=1cm]{100_arrow.eps}
-\end{picture}
-\begin{picture}(0,0)(97,-10)
-\includegraphics[height=0.9cm]{001_arrow.eps}
-\end{picture}
-\end{center}
-\vspace{0.1cm}
-\end{minipage}
+IBS: Impinging C creates V \& far away \si\\[0.3cm]
+Low migration barrier towards C$_{\text{sub}}$\\
+\&\\
+High barrier for reverse process\\[0.3cm]
+{\color{blue}
+High probability of stable C$_{\text{sub}}$ configuration
 }
-\begin{minipage}{0.3cm}
-\hfill
-\end{minipage}
-\framebox{
-\begin{minipage}{5.9cm}
-\includegraphics[width=5.9cm]{vasp_mig/comb_mig_4-2_vac_fullct.ps}\\[0.1cm]
-\begin{center}
-\begin{picture}(0,0)(60,0)
-\includegraphics[width=0.9cm]{vasp_mig/comb_3-1_init.eps}
-\end{picture}
-\begin{picture}(0,0)(25,0)
-\includegraphics[width=0.9cm]{vasp_mig/comb_3-1_seq_03.eps}
-\end{picture}
-\begin{picture}(0,0)(-20,0)
-\includegraphics[width=0.9cm]{vasp_mig/comb_3-1_seq_07.eps}
-\end{picture}
-\begin{picture}(0,0)(-55,0)
-\includegraphics[width=0.9cm]{vasp_mig/comb_3-1_final.eps}
-\end{picture}
-\begin{picture}(0,0)(12.5,5)
-\includegraphics[width=1cm]{100_arrow.eps}
-\end{picture}
-\begin{picture}(0,0)(95,0)
-\includegraphics[height=0.9cm]{001_arrow.eps}
-\end{picture}
 \end{center}
-\vspace{0.1cm}
 \end{minipage}
-}
+}}}
+
+\end{pspicture}
 
 \end{slide}
 
-\end{document}
-\ifnum1=0
+% continue here
+\fi
 
 \begin{slide}
 
- {\large\bf\boldmath
-  Combinations of substitutional C and \hkl<1 1 0> Si self-interstitials
- }
+\headphd
+{\large\bf
+ Combinations of substitutional C and Si self-interstitials
+}
 
- \scriptsize
+\scriptsize
 
 \begin{minipage}{6.0cm}
 \includegraphics[width=5.8cm]{c_sub_si110.ps}
 \end{minipage}
-\begin{minipage}{7cm}
+\begin{minipage}{6.3cm}
 \scriptsize
 \begin{itemize}
  \item IBS: C may displace Si\\
@@ -1878,13 +1831,10 @@ Interaction along \hkl[1 1 0]
 \end{center}
 \end{minipage}
 
-\begin{minipage}{6.5cm}
+\begin{minipage}{6.0cm}
 \includegraphics[width=6.0cm]{162-097.ps}
-\begin{itemize}
- \item Low migration barrier
-\end{itemize}
 \end{minipage}
-\begin{minipage}{6.5cm}
+\begin{minipage}{6.2cm}
 \begin{center}
 Ab initio MD at \degc{900}\\
 \includegraphics[width=3.3cm]{md_vasp_01.eps}
@@ -1899,6 +1849,9 @@ Contribution of entropy to structural formation
 
 \end{slide}
 
+\end{document}
+\ifnum1=0
+
 \begin{slide}
 
  {\large\bf