The classical approach is unable to reproduce the correct character of bonding due to the deficiency of quantum-mechanical effects in the potential.
%ref mod: language - energy / order
%Nevertheless, both methods predict the same type of interstitial as the ground state configuration, and also the order in energy of the remaining defects is reproduced fairly well.
-Nevertheless, both methods predict the same type of interstitial as the ground state configuration, and also the relative energies of the remaining defects are reproduced fairly well.
+Nevertheless, both methods predict the same type of interstitial as the ground state configuration.
+Furthermore, the relative energies of the other defects are reproduced fairly well.
From this, a description of defect structures by classical potentials looks promising.
% ref mod: language - changed
%However, focussing on the description of diffusion processes the situation is changing completely.
-However, focussing on the description of diffusion processes the situation is changed completely.
+However, focussing on the description of diffusion processes the situation has changed completely.
Qualitative and quantitative differences exist.
First of all, a different pathway is suggested as the lowest energy path, which again might be attributed to the absence of quantum-mechanical effects in the classical interaction model.
Secondly, the activation energy is overestimated by a factor of 2.4 compared to the more accurate quantum-mechanical methods and experimental findings.
This has been shown to have two reasons, i.e. the overestimated barrier of migration due to the artificial interaction cut-off on the one hand, and on the other hand the lack of quantum-mechanical effects which are crucial in the problem under study.
% ref mod: language - being investigated
%In order to get more insight on the SiC precipitation mechanism, further ab initio calculations are currently investigated.
-In order to get more insight on the SiC precipitation mechanism, further ab initio calculations are currently being investigated.
+In order to get more insight on the SiC precipitation mechanism, further ab initio calculations are currently being performed.
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\section*{Acknowledgment}