more shortcuts

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 714c40f19a16abc21f8fa225c6e2f6fe90097e27..e5abf0d0a00891b3fa5d1674bda6a38b01e8c31e 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -88,7 +88,7 @@
 
 @Article{newman65,
   title =        "Vibrational absorption of carbon in silicon",
-  journal =      "Journal of Physics and Chemistry of Solids",
+  journal =      "J. Phys. Chem. Solids",
   volume =       "26",
   number =       "2",
   pages =        "373--379",
@@ -119,7 +119,7 @@
 
 @Article{bean71,
   title =        "The solubility of carbon in pulled silicon crystals",
-  journal =      "Journal of Physics and Chemistry of Solids",
+  journal =      "J. Phys. Chem. Solids",
   volume =       "32",
   number =       "6",
   pages =        "1211--1219",
@@ -1133,7 +1133,7 @@
 @Article{foell77,
   title =        "The formation of swirl defects in silicon by
                  agglomeration of self-interstitials",
-  journal =      "Journal of Crystal Growth",
+  journal =      "J. Cryst. Growth",
   volume =       "40",
   number =       "1",
   pages =        "90--108",
@@ -1150,7 +1150,7 @@
 @Article{foell81,
   title =        "Microdefects in silicon and their relation to point
                  defects",
-  journal =      "Journal of Crystal Growth",
+  journal =      "J. Cryst. Growth",
   volume =       "52",
   number =       "Part 2",
   pages =        "907--916",
@@ -1187,8 +1187,8 @@
 @InProceedings{werner96,
   author =       "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
                  Eichler",
-  booktitle =    "Ion Implantation Technology. Proceedings of the 11th
-                 International Conference on",
+  booktitle =    "Proceedings of the 11th International Conference on
+                 Ion Implantation Technology.",
   title =        "{TEM} investigation of {C}-Si defects in carbon
                  implanted silicon",
   year =         "1996",
@@ -1640,7 +1640,7 @@
   title =        "Organometallic vapor phase epitaxial growth of Ga{N}
                  on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
                  implantation into Si(1 1 1) substrate",
-  journal =      "Journal of Crystal Growth",
+  journal =      "J. Cryst. Growth",
   volume =       "261",
   number =       "2-3",
   pages =        "266--270",
@@ -1673,7 +1673,7 @@
 @Article{takeuchi91,
   title =        "Growth of single crystalline Ga{N} film on Si
                  substrate using 3{C}-Si{C} as an intermediate layer",
-  journal =      "Journal of Crystal Growth",
+  journal =      "J. Cryst. Growth",
   volume =       "115",
   number =       "1-4",
   pages =        "634--638",
@@ -2027,7 +2027,7 @@
 @Article{tairov81,
   title =        "General principles of growing large-size single
                  crystals of various silicon carbide polytypes",
-  journal =      "Journal of Crystal Growth",
+  journal =      "J. Cryst. Growth",
   volume =       "52",
   number =       "Part 1",
   pages =        "146--150",
@@ -2041,7 +2041,7 @@
 
 @Article{barrett91,
   title =        "Si{C} boule growth by sublimation vapor transport",
-  journal =      "Journal of Crystal Growth",
+  journal =      "J. Cryst. Growth",
   volume =       "109",
   number =       "1-4",
   pages =        "17--23",
@@ -2056,7 +2056,7 @@
 
 @Article{barrett93,
   title =        "Growth of large Si{C} single crystals",
-  journal =      "Journal of Crystal Growth",
+  journal =      "J. Cryst. Growth",
   volume =       "128",
   number =       "1-4",
   pages =        "358--362",
@@ -2074,7 +2074,7 @@
   title =        "Control of polytype formation by surface energy
                  effects during the growth of Si{C} monocrystals by the
                  sublimation method",
-  journal =      "Journal of Crystal Growth",
+  journal =      "J. Cryst. Growth",
   volume =       "131",
   number =       "1-2",
   pages =        "71--74",
@@ -2131,7 +2131,7 @@
                  Single-Crystal Films on Si",
   publisher =    "ECS",
   year =         "1987",
-  journal =      "Journal of The Electrochemical Society",
+  journal =      "J. Electrochem. Soc.",
   volume =       "134",
   number =       "6",
   pages =        "1558--1565",
@@ -2166,7 +2166,7 @@
 
 @Article{ueda90,
   title =        "Crystal growth of Si{C} by step-controlled epitaxy",
-  journal =      "Journal of Crystal Growth",
+  journal =      "J. Cryst. Growth",
   volume =       "104",
   number =       "3",
   pages =        "695--700",
@@ -2330,7 +2330,7 @@
 @Article{kaneda87,
   title =        "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
                  properties of its p-n junction",
-  journal =      "Journal of Crystal Growth",
+  journal =      "J. Cryst. Growth",
   volume =       "81",
   number =       "1-4",
   pages =        "536--542",
@@ -2787,7 +2787,7 @@
 @Article{powell93_2,
   title =        "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
                  of the ternary system",
-  journal =      "Journal of Crystal Growth",
+  journal =      "J. Cryst. Growth",
   volume =       "127",
   number =       "1-4",
   pages =        "425--429",
@@ -2804,7 +2804,7 @@
   author =       "H. J. Osten",
   title =        "Modification of Growth Modes in Lattice-Mismatched
                  Epitaxial Systems: Si/Ge",
-  journal =      "physica status solidi (a)",
+  journal =      "phys. status solidi (a)",
   volume =       "145",
   number =       "2",
   publisher =    "WILEY-VCH Verlag",
@@ -3492,7 +3492,7 @@
 @Article{chaussende07,
   author =       "D. Chaussende and P. J. Wellmann and M. Pons",
   title =        "Status of Si{C} bulk growth processes",
-  journal =      "Journal of Physics D: Applied Physics",
+  journal =      "J. Phys. D",
   volume =       "40",
   number =       "20",
   pages =        "6150",
@@ -3604,7 +3604,7 @@
                  Heteroepitaxial Growth",
   publisher =    "WILEY-VCH Verlag",
   year =         "1997",
-  journal =      "physica status solidi (b)",
+  journal =      "phys. status solidi (b)",
   volume =       "202",
   pages =        "405--420",
   URL =          "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
@@ -3688,7 +3688,7 @@
 
 @Article{hornstra58,
   title =        "Dislocations in the diamond lattice",
-  journal =      "Journal of Physics and Chemistry of Solids",
+  journal =      "J. Phys. Chem. Solids",
   volume =       "5",
   number =       "1-2",
   pages =        "129--141",
@@ -4453,7 +4453,7 @@
   title =        "Electronic Conduction in Silicon Carbide",
   publisher =    "AIP",
   year =         "1953",
-  journal =      "The Journal of Chemical Physics",
+  journal =      "J. Chem. Phys.",
   volume =       "21",
   number =       "5",
   pages =        "821--827",
@@ -4617,7 +4617,7 @@
 @Article{shibahara86,
   title =        "Surface morphology of cubic Si{C}(100) grown on
                  Si(100) by chemical vapor deposition",
-  journal =      "Journal of Crystal Growth",
+  journal =      "J. Cryst. Growth",
   volume =       "78",
   number =       "3",
   pages =        "538--544",
@@ -4670,7 +4670,7 @@
 @Article{fuyuki89,
   title =        "Atomic layer epitaxy of cubic Si{C} by gas source
                  {MBE} using surface superstructure",
-  journal =      "Journal of Crystal Growth",
+  journal =      "J. Cryst. Growth",
   volume =       "95",
   number =       "1-4",
   pages =        "461--463",
@@ -4708,7 +4708,7 @@
 @Article{yoshinobu90,
   title =        "Atomic level control in gas source {MBE} growth of
                  cubic Si{C}",
-  journal =      "Journal of Crystal Growth",
+  journal =      "J. Cryst. Growth",
   volume =       "99",
   number =       "1-4",
   pages =        "520--524",
@@ -4785,7 +4785,7 @@
                  3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
   publisher =    "WILEY-VCH Verlag",
   year =         "1997",
-  journal =      "physica status solidi (b)",
+  journal =      "phys. status solidi (b)",
   volume =       "202",
   pages =        "359--378",
   notes =        "3c-sic heteroepitaxial growth on si by gsmbe, lower
@@ -4794,7 +4794,7 @@
 
 @Article{takaoka98,
   title =        "Initial stage of Si{C} growth on Si(1 0 0) surface",
-  journal =      "Journal of Crystal Growth",
+  journal =      "J. Cryst. Growth",
   volume =       "183",
   number =       "1-2",
   pages =        "175--182",
@@ -4816,7 +4816,7 @@
   title =        "Low-temperature heteroepitaxial growth of cubic Si{C}
                  on Si using hydrocarbon radicals by gas source
                  molecular beam epitaxy",
-  journal =      "Journal of Crystal Growth",
+  journal =      "J. Cryst. Growth",
   volume =       "150",
   number =       "Part 2",
   pages =        "934--938",
@@ -4833,7 +4833,7 @@
   author =       "Volker Heine and Ching Cheng and Richard J. Needs",
   title =        "The Preference of Silicon Carbide for Growth in the
                  Metastable Cubic Form",
-  journal =      "Journal of the American Ceramic Society",
+  journal =      "J. Am. Ceram. Soc.",
   volume =       "74",
   number =       "10",
   publisher =    "Blackwell Publishing Ltd",
@@ -4899,7 +4899,7 @@
 
 @Article{newman61,
   title =        "The diffusivity of carbon in silicon",
-  journal =      "Journal of Physics and Chemistry of Solids",
+  journal =      "J. Phys. Chem. Solids",
   volume =       "19",
   number =       "3-4",
   pages =        "230--234",
@@ -5006,7 +5006,7 @@
   title =        "The iterative calculation of a few of the lowest
                  eigenvalues and corresponding eigenvectors of large
                  real-symmetric matrices",
-  journal =      "Journal of Computational Physics",
+  journal =      "J. Comput. Phys.",
   volume =       "17",
   number =       "1",
   pages =        "87--94",