--- /dev/null
+\chapter*{Acknowledgment}
+\addcontentsline{toc}{chapter}{Acknowledgment}
+
+First of all, I would like to thank Prof. Dr. Bernd Stritzker and Prof. Dr. Kai Nordlund for accepting me as a PhD student at their chairs at the University of Augsburg and Helsinki.
+Although Mr. Stritzker is doing experimental physics in Augsburg he gave me the opportunity to do this more or less theoretical work.
+During my stays in Finland Mr. Nordlund \ldots
+
--- /dev/null
+\chapter{Basics}
+
--- /dev/null
+\addcontentsline{toc}{chapter}{Contents}
+\tableofcontents
--- /dev/null
+\chapter{Introduction}
+
--- /dev/null
+\listoffigures
+\addcontentsline{toc}{chapter}{List of Figures}
+\listoftables
+\addcontentsline{toc}{chapter}{List of Tables}
--- /dev/null
+\addcontentsline{toc}{chapter}{References}
+\begin{thebibliography}{99}
+ \bibitem{example}
+ \selectlanguage{german}
+ F. Zirkelbach, M. H"aberlen, J. K. N. Lindner, B. Stritzker.
+ \selectlanguage{english}
+ {\em Modelling of a selforganization process leading to periodic arrays of nanometric amorphous precipitates by ion irradiation.}
+ Comp. Mater. Sci. 33 (2005) 310.
+\end{thebibliography}
--- /dev/null
+\chapter{List of publications}
+
+ \section{Papers}
+
+ \begin{enumerate}
+ \selectlanguage{german}
+ \item F. Zirkelbach, M. H"aberlen, J. K. N. Lindner, B. Stritzker.\\
+ \selectlanguage{english}
+ {\em Modelling of a selforganization process leading to periodic arrays of nanometric amorphous precipitates by ion irradiation.}\\
+ Comp. Mater. Sci. 33 (2005) 310.
+ \selectlanguage{german}
+ \item F. Zirkelbach, M. H"aberlen, J. K. N. Lindner, B. Stritzker.\\
+ \selectlanguage{english}
+ {\em Monte-Carlo-Simulation study of the selforganization of nanometric amorphous precipitates in regular arrays during ion irradiation.}\\
+ Nucl. Instr. and Meth. B 242 (2006) 679.
+ \end{enumerate}
+
+ \section{Conference talks}
+ \begin{enumerate}
+ \selectlanguage{german}
+ \item F. Zirkelbach, M. H"aberlen, J. K. N. Lindner und B. Stritzker.\\
+ {\em Monte-Carlo-Simulation der Selbstorganisation amorpher nanometrischer $SiC_x$"=Ausscheidungen in Silizium w"ahrend $C^+$-Ionen-Implantation}\\
+ AKF-Fr"uhjahrstagung der DPG, Regensburg, 2/2004, DS 1.4
+ \item F. Zirkelbach, M. H"aberlen, J. K. N. Lindner und B. Stritzker.\\
+ {\em Kinetik des Selbstorganisationsvorganges bei der Bildung von $SiC_x$"=Ausscheidungs-Arrays in $C^+$-Ionen-implantiertem Silizium.}\\
+ 69. Jahrestagung der DPG, Berlin, 2/2005, DS 8.6
+ \selectlanguage{english}
+ \end{enumerate}
+
+ \section{Diploma thesis}
+ \selectlanguage{german}
+ {\em Monte-Carlo-Simulation von selbstorganisierten nanometrischen $SiC_x$"=Ausscheidungen in $C^+$"=implantierten Silizium}.
+ \selectlanguage{english}
+
--- /dev/null
+\chapter{Results}
+
--- /dev/null
+\chapter{Simulation}
+
--- /dev/null
+\chapter{Summary and Outlook}
+
--- /dev/null
+\pdfoutput=0
+\documentclass[twoside,a4paper,11pt]{book}
+\usepackage[activate]{pdfcprot}
+\usepackage{verbatim}
+\usepackage{a4}
+\usepackage{a4wide}
+\usepackage[english,german]{babel}
+\usepackage[latin1]{inputenc}
+\usepackage[T1]{fontenc}
+\usepackage{amsmath}
+\usepackage{ae}
+\usepackage{aecompl}
+\usepackage[dvips]{graphicx}
+\graphicspath{{../img/}}
+\usepackage{color}
+\usepackage{pstricks}
+\usepackage{pst-node}
+\usepackage{rotating}
+%\usepackage{fancyhdr}
+%\pagestyle{fancy}
+
+% (re)new commands
+\newcommand{\printimg}[5]{%
+ \begin{figure}[#1]%
+ \begin{center}%
+ \includegraphics[#2]{#3}%
+ \caption{#4}%
+ \label{#5}%
+ \end{center}%
+ \end{figure}%
+}
+%\addto\captionsnenglish{%
+% \renewcommand{\figurename}{Fig.}%
+% \renewcommand{\tablename}{Table}%
+%}
+
+% hyphenation
+\hyphenation{}
+
+% english
+\selectlanguage{english}
+
+% author & title
+\author{Frank Zirkelbach}
+\title{Simulation study of the precipitation process of silicon carbide in carbon doped silicon}
+
+\begin{document}
+
+\frontmatter{}
+\include{title}
+\include{content}
+\include{lists}
+
+\mainmatter{}
+\include{intro}
+\include{basics}
+%\include{exp_findings}
+%\include{model}
+\include{simulation}
+\include{results}
+\include{summary_outlook}
+
+\appendix{}
+\include{publications}
+
+\backmatter{}
+\include{literature}
+\include{ack}
+
+\end{document}
--- /dev/null
+\begin{titlepage}
+
+\begin{center}
+
+ \hrule
+ \vspace{15pt}
+ {\LARGE\bf
+ Simulation study of the precipitation process of silicon carbide in carbon doped silicon \\
+ }
+ \vspace{10pt}
+ \hrule
+
+ \vspace{100pt}
+
+ % switch to german
+ \selectlanguage{german}
+
+ {\large
+ Zur Erlangung des akademischen Grades eines\\
+ Doktors der Naturwissenschaften\\
+ der Mathematisch-Naturwissenschaftlichen Fakult"at\\
+ der Universit"at Augsburg vorgelegte
+ }
+
+ \vspace{130pt}
+
+ {\Large
+ Dissertation
+ }
+
+ \vspace{130pt}
+
+ {\large
+ von\\
+ }
+ {\Large
+ Frank Zirkelbach\\
+ }
+ {\large
+ aus\\
+ Berlin\\
+ }
+
+ \vspace{60pt}
+
+ {\large
+ Augsburg, im Oktober 2006
+ }
+
+\end{center}
+
+\newpage
+
+\raisebox{600pt}{ }
+
+\selectlanguage{german}
+\begin{tabular}{ll}
+Erstkorrektor: & Prof. Dr. Bernd Stritzker \\
+Zweitkorrektor: & Prof. Dr. Kai Nordlund \\
+Tag der m"undlichen Pr"ufung: & 17. November 2006 \\
+\end{tabular}
+
+% switch back to english
+\selectlanguage{english}
+
+\end{titlepage}