commas and space fixes

diff --git a/posic/thesis/md.tex b/posic/thesis/md.tex
index d09373b3b2f156b1d14adbab31d7e39f6e19d565..6e9786450c69ab587a10ceb51d5e9e1aed9996fa 100644 (file)
--- a/posic/thesis/md.tex
+++ b/posic/thesis/md.tex
@@ -364,8 +364,8 @@ The \ci{} \hkl<1 0 0> DB dominated structure turns into a structure characterize
 Clearly, the high-temperature results indicate the precipitation mechanism involving an increased participation of \cs.
 Although diamond and graphite like bonds are reduced, no agglomeration of C is observed within the simulated time.
 Isolated structures of stretched SiC, which are adjusted to the c-Si host with respect to the lattice constant and alignment, are formed.
-By agglomeration of \cs{} the interfacial energy could be overcome and a transition from a coherent and stretched SiC structure into an incoherent and partially strain-compensated SiC precipitate could occur.
-Indeed, \si in the near surrounding is observed, which may initially compensate tensile strain in the stretched SiC structure or rearrange the \cs{} sublattice and finally serve as supply for additional C to form further SiC or compensate strain at the interface of the incoherent SiC precipitate and the Si host.
+By agglomeration of \cs{}, the interfacial energy could be overcome and a transition from a coherent and stretched SiC structure into an incoherent and partially strain-compensated SiC precipitate could occur.
+Indeed, \si{} in the near surrounding is observed, which may initially compensate tensile strain in the stretched SiC structure or rearrange the \cs{} sublattice and finally serve as supply for additional C to form further SiC or compensate strain at the interface of the incoherent SiC precipitate and the Si host.
 
 \subsection{High C concentration simulations}
 
@@ -390,7 +390,7 @@ On the other hand, the amount of next neighbored C atoms with a distance of appr
 Thus, higher temperatures seem to additionally enhance a conflictive process, i.e.\ the formation of C agglomerates, obviously inconsistent with the desired process of 3C-SiC formation.
 This is supported by the C-C peak at \distn{0.252}, which corresponds to the second next neighbor distance in the diamond structure of elemental C.
 Investigating the atomic data indeed reveals two C atoms, which are bound to and interconnected by a third C atom, to be responsible for this distance.
-The C-C peak at about \distn{0.31}, which is slightly shifted to higher distances (\distn{0.317}) with increasing temperature still corresponds quite well to the next neighbor distance of C in 3C-SiC as well as a-SiC and indeed results from C-Si-C bonds.
+The C-C peak at about \distn{0.31}, which is slightly shifted to higher distances (\distn{0.317}) with increasing temperature still corresponds quite well to the next neighbor distance of C in 3C-SiC as well as a-SiC and, indeed, results from C-Si-C bonds.
 The Si-C peak at \distn{0.282}, which is pronounced with increasing temperature, is constructed out of a Si atom and a C atom, which are both bound to another central C atom.
 This is similar for the Si-C peak at approximately \distn{0.35}.
 In this case, the Si and the C atom are bound to a central Si atom.