% additional stuff
\usepackage{miller}
-\newcommand{\prune}[1]{{\color{red} #1}}
-\newcommand{\possprune}[1]{{\color{blue} #1}}
+%\newcommand{\prune}[1]{{\color{red} #1}}
+\newcommand{\prune}[1]{{}}
+%\newcommand{\pruneifnotaccepted}[1]{{\color{blue} #1}}
+\newcommand{\pruneifnotaccepted}[1]{{#1}}
\begin{document}
The two C$_{\text{i}}$ atoms form a strong C-C bond, which is responsible for the large gain in energy resulting in a binding energy of \unit[-2.39]{eV}.
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Investigating migration barriers allows to predict the probability of formation of defect complexes by thermally activated diffusion processes.
}
% ground state configuration, C cluster
In addition, the starting configuration exhibits a low binding energy (\unit[-1.90]{eV}) and is, thus, very likely to occur.
However, a barrier height of more than \unit[4]{eV} was detected resulting in a low probability for the transition.
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The high activation energy is attributed to the stability of such a low energy configuration, in which the C atom of the second DB is located close to the initial DB.
}
Low barriers have only been identified for transitions starting from energetically less favorable configurations, e.g. the configuration of a \hkl[-1 0 0] DB located at position 2 (\unit[-0.36]{eV}).
Since thermally activated C clustering is, thus, only possible by traversing energetically unfavored configurations, extensive C clustering is not expected.
Furthermore, the migration barrier of \unit[1.2]{eV} is still higher than the activation energy of \unit[0.9]{eV} observed for a single C$_{\text{i}}$ \hkl<1 0 0> DB in c-Si.
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The migration barrier of a C$_{\text{i}}$ DB in a complex system is assumed to approximate the barrier of a DB in a separated system with increasing defect separation.
Accordingly, lower migration barriers are expected for pathways resulting in larger separations of the C$_{\text{i}}$ DBs.
% acknowledged by 188-225 (reverse order) calc
% 2 more migs: 051 -> 128 and 026! forgot why ... probably it's about probability of C clustering
Obviously agglomeration of C$_{\text{i}}$ and C$_{\text{s}}$ is energetically favorable except for separations along one of the \hkl<1 1 0> directions.
The energetically most favorable configuration (configuration b) forms a strong but compressively strained C-C bond with a separation distance of \unit[0.142]{nm} sharing a Si lattice site.
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Again, conclusions concerning the probability of formation are drawn by investigating migration paths.
}
Since C$_{\text{s}}$ is unlikely to exhibit a low activation energy for migration the focus is on C$_{\text{i}}$.
Pathways starting from the two next most favored configurations were investigated, which show activation energies above \unit[2.2]{eV} and \unit[3.5]{eV} respectively.
Although lower than the barriers for obtaining the ground state of two C$_{\text{i}}$ defects, the activation energies are yet considered too high.
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For the same reasons as in the last subsection, structures other than the ground-state configuration are, thus, assumed to arise more likely due to much lower activation energies necessary for their formation and still comparatively low binding energies.
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In the last subsection configurations of a C$_{\text{i}}$ DB with C$_{\text{s}}$ occupying a vacant site have been investigated.
-}
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Additionally, configurations might arise in IBS, in which the impinging C atom creates a vacant site near a C$_{\text{i}}$ DB, but does not occupy it.
-}
-Resulting binding energies of a C$_{\text{i}}$ DB and a nearby vacancy are listed in the second row of Table~\ref{table:dc_c-sv}.
+%
+Resulting} Binding energies of a C$_{\text{i}}$ DB and a nearby vacancy are listed in the second row of Table~\ref{table:dc_c-sv}.
All investigated structures are preferred compared to isolated, largely separated defects.
In contrast to C$_{\text{s}}$, this is also valid for positions along \hkl[1 1 0] resulting in an entirely attractive interaction between defects of these types.
Even for the largest possible distance (R) achieved in the calculations of the periodic supercell, a binding energy as low as \unit[-0.31]{eV} is observed.
\label{sec:md}
The MD technique is used to gain insight into the behavior of C existing in different concentrations in c-Si on the microscopic level at finite temperatures.
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Simulations are restricted to classical potential simulations using the procedure introduced in section \ref{meth}.
+}
In a first step, simulations are performed, which try to mimic the conditions during IBS.
Results reveal limitations of the employed potential and MD in general.
With reference to the results of the last section, a workaround is discussed.
\caption{Radial distribution function for Si-C (Fig.~\ref{fig:v2:si-c}) and C-C (Fig.~\ref{fig:v2:c-c}) pairs for the C insertion into $V_2$ at elevated temperatures. Arrows mark the respective cut-off distances.}
\label{fig:v2}
\end{figure}
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\begin{figure}
\begin{center}
\includegraphics[width=\columnwidth]{2050.eps}
\label{fig:v2as}
\end{figure}
A cross-section along the \hkl(1 -1 0) plane of the atomic structure for a C insertion temperature of \unit[2050]{$^{\circ}$C} is shown in Fig.~\ref{fig:v2as}.
+}
The amorphous SiC-like phase remains.
No significant change in structure is observed.
However, the decrease of the cut-off artifact and slightly sharper peaks observed with increasing temperature, in turn, indicate a slight acceleration of the dynamics realized by the supply of kinetic energy.
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