finisched cvd on sic

diff --git a/posic/thesis/sic.tex b/posic/thesis/sic.tex
index b41d5758d8bcdb76873449db8745741e63eb96bf..252a29bb8847ff0f7f04e00f93122a13158b1d99 100644 (file)
--- a/posic/thesis/sic.tex
+++ b/posic/thesis/sic.tex
@@ -177,13 +177,17 @@ However, mismatches in the thermal expansion coefficient and the lattice paramet
 
 The alternative attempt to grow SiC on SiC substrates has shown to drastically reduce the concentration of defects in deposited layers.
 By CVD, both, the 3C \cite{kong88,powell90} as well as the 6H \cite{kong88_2,powell90_2} polytype could be successfully grown.
-In order to obtain the homoepitactically grown 6H polytype, off-axis 6H-SiC wafers are required as a substrate \cite{ueda90,kimoto93}.
+In order to obtain the homoepitactically grown 6H polytype, off-axis 6H-SiC wafers are required as a substrate \cite{kimoto93}.
 %In the so called step-controlled epitaxy, lateral growth proceeds from atomic steps without the necessity of preceding nucleation events.
 Investigations indicate that in the so-called step-controlled epitaxy, crystal growth proceeds through the adsorbtion of Si species at atomic steps and their carbonization by hydrocarbon molecules.
 This growth mechanism does not require two-dimensional nucleation.
 Instead, crystal growth is governed by mass transport, i.e. the diffusion of reactants in a stagnant layer.
 In contrast, layers of the 3C polytype are formed on exactly oriented \hkl(0 0 0 1) 6H-SiC substrates by two-dimensional nucleation on terraces.
-Lateral 3C-SiC growth was also observed on on low tilt angle off-axis substrates ... by dislocations \cite{powell91} ... used to lower APB density due to controlled starting points of 3C-SiC growth ...
+However, lateral 3C-SiC growth was also observed on low tilt angle off-axis substrates originating from intentionally induced dislocations \cite{powell91}.
+Additionally, 6H-SiC was observed on clean substrates even for a tilt angle as low as \unit[0.1]{$^{\circ}$} due to low surface mobilities that facilitate arriving molecules to reach surface steps.
+Thus, 3C nucleation is assumed as a result of migrating Si and C cointaining molecules interacting with surface disturbances by a yet unknown mechanism, in contrast to a model \cite{ueda90}, in which the competing 6H versus 3C growth depends on the density of surface steps.
+
+MBE ... advantages ... and so on ...
 
 \section{Ion beam synthesis of cubic silicon carbide}