method

diff --git a/posic/publications/sic_prec_merge.tex b/posic/publications/sic_prec_merge.tex
index 75fdd9bc96483df92e3237d1759887f3145b6bc3..9743fb23e822a91de4548dc9d038e1b2d32f3f02 100644 (file)
--- a/posic/publications/sic_prec_merge.tex
+++ b/posic/publications/sic_prec_merge.tex
@@ -124,6 +124,7 @@ Furthermore, highly accurate quantum-mechanical results have been used to identi
 
 %  --------------------------------------------------------------------------------
 \section{Methodology}
+\label{meth}
 % ----- DFT ------
 The first-principles DFT calculations have been performed with the plane-wave based Vienna ab initio Simulation package (VASP)\cite{kresse96}.
 The Kohn-Sham equations were solved using the generalized-gradient exchange-correlation functional approximation proposed by Perdew and Wang\cite{perdew86,perdew92}.
@@ -756,7 +757,7 @@ Thus, a proper description with respect to the relative energies of formation is
 \label{sec:md}
 
 The MD technique is used to gain insight into the behavior of C existing in different concentrations in c-Si on the microscopic level at finite temperatures.
-Simulations are restricted to classical potential simulations.
+Simulations are restricted to classical potential simulations using the procedure introduced in section \ref{meth}.
 In a first step, simulations are performed, which try to mimic the conditions during IBS.
 Results reveal limitations of the employed potential and MD in general.
 With reference to the results of the last section, a workaround is discussed.