--- /dev/null
+\newpage
+\addcontentsline{toc}{chapter}{Curriculum vitae}
+\chapter*{Curriculum vitae\markboth{Curriculum vitae}{}}
+
+\titleformat{\section}{\large\raggedright}{}{0em}{}[\titlerule]
+\titlespacing{\section}{0pt}{3pt}{3pt}
+
+\renewcommand{\textsc}[1]{#1}
+
+\section*{Personal data}
+\begin{tabular}{rl}
+\textsc{Place and date of birth:} & Berlin, Germany | 17 November 1977\\
+\textsc{Address:} & R\"omerweg 10, 86391 Stadtbergen, Germany\\
+\end{tabular}
+
+\section*{Basic education}
+\begin{tabular}{r|p{10cm}}
+\textsc{Sep 1988 - Jul 1998} & \textbf{Grammar school}\newline
+ Justus-von-Liebig-Gymnasium, Neus\"a\ss\newline
+ Holbein-Gymnasium, Augsburg\\
+\multicolumn{2}{c}{}\\
+\textsc{Sep 1984 - Jul 1988} & \textbf{Elementary school}\newline
+ Ernst-Habermann-Grundschule, Berlin, Wilmersdorf\\
+\end{tabular}
+
+\section*{Conscription}
+\begin{tabular}{r|p{10cm}}
+\textsc{Aug 1998 - Sep 1999} & \textbf{Alternative civilian service}\newline
+ Hessing-Klinik, Augsburg\\
+\end{tabular}
+
+\section*{Scientific education}
+\begin{tabular}{r|p{10cm}}
+\textsc{Jan 2006 - Present} & \textbf{Doctoral studies in physics}\newline
+ Physics Department, University of Augsburg\newline {\small
+ \begin{tabular}{lp{8cm}}
+ Thesis: &
+ {\em
+ Atomistic simulation study on the
+ silicon carbide precipitation in silicon}\\
+ \end{tabular}
+ }\\
+\multicolumn{2}{c}{}\\
+\textsc{Jul 2009 - Present} & \textbf{Collaboration with the University of Paderborn}\newline
+ Theoretical Physics, Physics Department\\
+\multicolumn{2}{c}{}\\
+\textsc{Jan 2006 - Dec 2008} & \textbf{Scholarship student}\newline
+ Bayerische Forschungsstiftung\\
+\multicolumn{2}{c}{}\\
+\textsc{Oct/Nov 2007} & \textbf{Research period at the University of Helsinki}\\
+\textsc{Aug/Sep 2008} & Division of Materials Physics, Department of Physics\\
+\multicolumn{2}{c}{}\\
+\textsc{Oct 1999 - Dec 2005} & \textbf{Studies in physics}\newline
+ Physics Department, University of Augsburg\newline
+ {\small \begin{tabular}{lp{8cm}}
+ Thesis: &
+ {\em
+ Monte-Carlo-Simulation von selbstorganisierten\newline
+ nanometrischen SiC$_x$-Ausscheidungen\newline
+ in C$^+$-implantierten Silizium}\\
+ \end{tabular}
+ }\\
+\end{tabular}
+
\begin{minipage}{5cm}
\underline{Tetrahedral}\\
$E_{\text{f}}=3.40\,\text{eV}$\\
-\includegraphics[width=4.0cm]{si_pd_albe/tet.eps}
+\includegraphics[width=4.0cm]{si_pd_albe/tet_bonds.eps}
\end{minipage}
\begin{minipage}{10cm}
\underline{Hexagonal}\\[0.1cm]
\begin{minipage}{4cm}
$E_{\text{f}}^*=4.48\,\text{eV}$\\
-\includegraphics[width=4.0cm]{si_pd_albe/hex_a.eps}
+\includegraphics[width=4.0cm]{si_pd_albe/hex_a_bonds.eps}
\end{minipage}
\begin{minipage}{0.8cm}
\begin{center}
\end{minipage}
\begin{minipage}{4cm}
$E_{\text{f}}=3.96\,\text{eV}$\\
-\includegraphics[width=4.0cm]{si_pd_albe/hex.eps}
+\includegraphics[width=4.0cm]{si_pd_albe/hex_bonds.eps}
\end{minipage}
\end{minipage}\\[0.2cm]
\begin{minipage}{5cm}
\underline{\hkl<1 0 0> dumbbell}\\
$E_{\text{f}}=5.42\,\text{eV}$\\
-\includegraphics[width=4.0cm]{si_pd_albe/100.eps}
+\includegraphics[width=4.0cm]{si_pd_albe/100_bonds.eps}
\end{minipage}
\begin{minipage}{5cm}
\underline{\hkl<1 1 0> dumbbell}\\
$E_{\text{f}}=4.39\,\text{eV}$\\
-\includegraphics[width=4.0cm]{si_pd_albe/110.eps}
+\includegraphics[width=4.0cm]{si_pd_albe/110_bonds.eps}
\end{minipage}
\begin{minipage}{5cm}
\underline{Vacancy}\\