started to integrate si int mig as an excursus

diff --git a/posic/thesis/defects.tex b/posic/thesis/defects.tex
index 7497e1cb56080f0ec3ea98149df6ba3fccf35902..a02e20979d7e42ad636f59c118abe3c7e85b4ee0 100644 (file)
--- a/posic/thesis/defects.tex
+++ b/posic/thesis/defects.tex
@@ -1456,7 +1456,12 @@ Si atoms 1 and 2, which form the initial DB, occupy Si lattice sites in the fina
 These results support the above assumptions of an increased entropic contribution to structural formation involving C$_{\text{s}}$ to a greater extent.
 
 
-% todo migration of \si{}!
+% link to migration of \si{}!
+The possibility for separated configurations of \cs{} and \si{} becomes even more likely if one of the constituents exhibits a low barrier of migration.
+In this case, the \si{} is assumed to constitute the mobile defect compared to the stable \cs{} atom.
+Acoording to Fig.~\ref{fig:defects:si_mig1}, an activation energy of \unit[0.67]{eV} is necessary for the transition of the \si{} \hkl[0 1 -1] to \hkl[1 1 0] DB located at the neighbored Si lattice site in \hkl[1 1 -1] direction.
+Indeed, the transition ... equal to as if cs is near ..
+Further ...
 
 
 % kept for nostalgical reason!