tersoff",
}
-@Article{batra87,
+@Article{kitabatake00,
title = "Si{C}/Si heteroepitaxial growth",
author = "M. Kitabatake",
journal = "Thin Solid Films",
doi = "10.1103/PhysRevB.66.195214",
publisher = "American Physical Society",
notes = "c in c-si, diffusion, interstitial configuration +
- links, interaction of carbon and silicon
- interstitials",
+ links, interaction of carbon and silicon interstitials,
+ tersoff suitability",
}
@Article{leung99,
publisher = "The Japan Society of Applied Physics",
notes = "tersoff stringent test",
}
+
+@Article{holmstroem08,
+ title = "Threshold defect production in silicon determined by
+ density functional theory molecular dynamics
+ simulations",
+ author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
+ journal = "Phys. Rev. B",
+ volume = "78",
+ number = "4",
+ pages = "045202",
+ numpages = "6",
+ year = "2008",
+ month = jul,
+ doi = "10.1103/PhysRevB.78.045202",
+ publisher = "American Physical Society",
+ notes = "threshold displacement comparison empirical and ab
+ initio",
+}
+
+@Article{nordlund97,
+ title = "Repulsive interatomic potentials calculated using
+ Hartree-Fock and density-functional theory methods",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "132",
+ number = "1",
+ pages = "45--54",
+ year = "1997",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(97)00447-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
+ author = "K. Nordlund and N. Runeberg and D. Sundholm",
+ notes = "repulsive ab initio potential",
+}