\section{Introduction}
-High-dose implantations into solids usually results in the formation of unordered ensembles of precipitates with a
-
-
-\section{Modell}
+Precipitates, as a result of high-dose ion implantation into solids, are usually statistically arranged and have a broad size distribution.
+However, the formation of ordered, lamellar inclusions has been observed for a number of ion/target combinations at certain implantation conditions \cite{ommen,specht,ishimaru}.
+An inevitable condition for the material to observe this special self-organized arrangement is a largely reduced density of host atoms in the amorphous phase compared to the crystalline host lattice.
+As a consequence stress is exerted by the amorphous inclusions which is responsible for the ordering process.
+A model to describe the process is introduced.
+The implementation of a simulation code based on that model is discussed.
+Simulation results are compared to experimental data, focussing on high-dose carbon implantation into silicon.
+Finally a guideline for fabrication of broad ditributions of lamellar ordered structures is suggested.
+
+\section{Model}
+High-dose carbon implantations at $150 \, ^{\circ} \mathrm{C}$ with an energy of $180 \, keV$ result
\section{Simulation}
\section{Results}
-\section{Summayr and conclusion}
+\section{Summary and conclusion}
+
+\begin{thebibliography}{20}
+\bibitem{ommen} A. H. van Ommen. Nucl. Instr. and Meth. B 39 (1989) 194.
+\bibitem{specht} E. D. Specht, D. A. Walko, S. J. Zinkle. Nucl. Instr. and Meth. B 84 (2000) 390.
+\bibitem{ishimaru} M. Ishimaru, R. M. Dickerson, K. E. Sickafus. Nucl. Instr. and Meth. B 166-167 (2000) 390.
+\end{thebibliography}
\end{document}