chinesisch essen holen, safetry checkin :)

diff --git a/posic/publications/c_defects_in_si.tex b/posic/publications/c_defects_in_si.tex
index d3a7ecae91a4a0fd3db6d90fb47d9a3dc936d02f..905d07e87b1192aece79dbc855286e9372235790 100644 (file)
--- a/posic/publications/c_defects_in_si.tex
+++ b/posic/publications/c_defects_in_si.tex
@@ -64,10 +64,15 @@ Atomistic simulations offer a powerful tool to study materials on a microscopic
 Relevant structures consisting of $\approx 10^4$ atoms for the nanocrystal and even more atoms for a reasonably sized Si host matrix are too large to be completely described by high accuracy quantum mechanical methods.\r
 Directly modelling the dynamics of the processes mentioned above almost inevitably requires the atomic interaction to be described by less accurate though computationally more efficient classical potentials.\r
 The most common empirical potentials for covalent systems are the Stillinger-Weber\cite{stillinger85}, Brenner\cite{brenner90}, Tersoff\cite{tersoff_si3} and environment-dependent interatomic (EDIP)\cite{bazant96,bazant97,justo98} potential.\r
-From the mentioned potentials, until recently\cite{lucas10}, a parametrization to describe the C-Si multicomponent system did only exist for the Tersoff potential\cite{tersoff_m}.\r
-Description successful ... and failed ...\r
+Until recently\cite{lucas10}, a parametrization to describe the C-Si multicomponent system within the mentioned interaction models did only exist for the Tersoff\cite{tersoff_m} and related potentials.\r
 Whether such potentials are appropriate for the description of the physical problem has, however, to be verified first by applying classical and quantum-mechanical methods to relevant processes that can be treated by both methods.\r
-In this work, the applicability of a Tersoff-like bond order potential\cite{albe_sic_pot} to some basic processes involved in the initially mentioned SiC precipitation mechanism is investigated by comparing results gained by classical and ab inito calculations.\r
+An extensive comparison\cite{balamane92} concludes that each potential has its strengths and limitations and none of them is clearly superior to others.\r
+Despite their shortcomings these potentials are assumed to be reliable for large-scale simulations\cite{balamane92,huang95,godet03} on specific problems under investigation providing insight into phenomena that are otherwise not accessible by experimental or first principles methods.\r
+Bsp wo es nicht funktioniert -> gao und denevanth aus neuem edip + modified potentials aus meiner liste ...\r
+\r
+\cite{balamane92,huang95,godet03}\r
+\r
+In this work, the applicability of a Tersoff-like bond order potential\cite{albe_sic_pot} (claiming good ... nachschauen bei paper, dass dann doch edip nimmt) to some basic processes involved in the initially mentioned SiC precipitation mechanism is investigated by comparing results gained by classical and ab inito calculations.\r
 \r
 In the following a comparative investigation of density functional theory (DFT) studies and classical potential calculations of the structure, energetics and mobility of carbon defects in silicon is presented.\r
 \r