pages = "15150--15159",
numpages = "9",
year = "1995",
- month = dec,
doi = "10.1103/PhysRevB.52.15150",
- notes = "modified tersoff, scale cutoff with volume",
+ notes = "modified tersoff, scale cutoff with volume, promising
+ tersoff reparametrization",
publisher = "American Physical Society",
}
VAPOR DEPOSITION",
URL = "http://link.aip.org/link/?JAP/73/726/1",
doi = "10.1063/1.353329",
+ notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic"
}
@Article{powell90,
PHASE EPITAXY",
URL = "http://link.aip.org/link/?APL/56/1353/1",
doi = "10.1063/1.102512",
+ notes = "cvd of 3c-sic on 6h-sic"
+}
+
+@Article{yuan95,
+ author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
+ Thokala and M. J. Loboda",
+ collaboration = "",
+ title = "Reduced temperature growth of crystalline 3{C}-Si{C}
+ films on 6{H}-Si{C} by chemical vapor deposition from
+ silacyclobutane",
+ publisher = "AIP",
+ year = "1995",
+ journal = "Journal of Applied Physics",
+ volume = "78",
+ number = "2",
+ pages = "1271--1273",
+ keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
+ EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
+ SPECTROPHOTOMETRY",
+ URL = "http://link.aip.org/link/?JAP/78/1271/1",
+ doi = "10.1063/1.360368",
+ notes = "3c-sic on 6h-sic, cvd, reduced temperature",
}
@Article{fissel95,
notes = "charge transport in strained si",
}
-@Article{PhysRevB.69.155214,
+@Article{kapur04,
title = "Carbon-mediated aggregation of self-interstitials in
silicon: {A} large-scale molecular dynamics study",
author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
notes = "simulation using promising tersoff reparametrization",
}
-@Article{tang95,
- title = "Atomistic simulation of thermomechanical properties of
- \beta{}-Si{C}",
- author = "Meijie Tang and Sidney Yip",
- journal = "Phys. Rev. B",
- volume = "52",
- number = "21",
- pages = "15150--15159",
- numpages = "9",
- year = "1995",
- month = dec,
- doi = "10.1103/PhysRevB.52.15150",
- publisher = "American Physical Society",
- notes = "promising tersoff reparametrization",
-}
-
@Article{barkema96,
title = "Event-Based Relaxation of Continuous Disordered
Systems",
notes = "explanation of sgmd and hyper md, applied to amorphous
silicon",
}
+
+@Article{taylor93,
+ author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
+ collaboration = "",
+ title = "Carbon precipitation in silicon: Why is it so
+ difficult?",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Applied Physics Letters",
+ volume = "62",
+ number = "25",
+ pages = "3336--3338",
+ keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
+ MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
+ ENERGY",
+ URL = "http://link.aip.org/link/?APL/62/3336/1",
+ doi = "10.1063/1.109063",
+ notes = "interfacial energy of cubic sic and si",
+}
+
+@Article{chaussende08,
+ title = "Prospects for 3{C}-Si{C} bulk crystal growth",
+ journal = "Journal of Crystal Growth",
+ volume = "310",
+ number = "5",
+ pages = "976--981",
+ year = "2008",
+ note = "Proceedings of the E-MRS Conference, Symposium G -
+ Substrates of Wide Bandgap Materials",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
+ author = "D. Chaussende and F. Mercier and A. Boulle and F.
+ Conchon and M. Soueidan and G. Ferro and A. Mantzari
+ and A. Andreadou and E. K. Polychroniadis and C.
+ Balloud and S. Juillaguet and J. Camassel and M. Pons",
+ notes = "3c-sic crystal growth, sic fabrication + links,
+ metastable",
+}