% bibliography database
%
-% molecular dynamics: basics / potential
-
-@article{albe_sic_pot,
- author = {Paul Erhart and Karsten Albe},
- title = {Analytical potential for atomistic simulations of silicon, carbon,
- and silicon carbide},
- publisher = {APS},
- year = {2005},
- journal = {Phys. Rev. B},
- volume = {71},
- number = {3},
- eid = {035211},
- numpages = {14},
- pages = {035211},
- notes = {alble reparametrization, analytical bond oder potential (ABOP)},
- keywords = {silicon; elemental semiconductors; carbon; silicon compounds;
- wide band gap semiconductors; elasticity; enthalpy;
- point defects; crystallographic shear; atomic forces},
- url = {http://link.aps.org/abstract/PRB/v71/e035211},
- doi = {10.1103/PhysRevB.71.035211}
+@Article{albe_sic_pot,
+ author = "Paul Erhart and Karsten Albe",
+ title = "Analytical potential for atomistic simulations of
+ silicon, carbon, and silicon carbide",
+ publisher = "APS",
+ year = "2005",
+ journal = "Phys. Rev. B",
+ volume = "71",
+ number = "3",
+ eid = "035211",
+ numpages = "14",
+ pages = "035211",
+ notes = "alble reparametrization, analytical bond oder
+ potential (ABOP)",
+ keywords = "silicon; elemental semiconductors; carbon; silicon
+ compounds; wide band gap semiconductors; elasticity;
+ enthalpy; point defects; crystallographic shear; atomic
+ forces",
+ URL = "http://link.aps.org/abstract/PRB/v71/e035211",
+ doi = "10.1103/PhysRevB.71.035211",
}
@Article{albe2002,
- title = {Modeling the metal-semiconductor interaction:
- Analytical bond-order potential for platinum-carbon},
- author = {Albe, Karsten and Nordlund, Kai and Averback, Robert S.},
- journal = {Phys. Rev. B},
- volume = {65},
- number = {19},
- pages = {195124},
- numpages = {11},
- year = {2002},
- month = {May},
- doi = {10.1103/PhysRevB.65.195124},
- publisher = {American Physical Society},
- notes = {derivation of albe bond order formalism},
+ title = "Modeling the metal-semiconductor interaction:
+ Analytical bond-order potential for platinum-carbon",
+ author = "Karsten Albe and Kai Nordlund and Robert S. Averback",
+ journal = "Phys. Rev. B",
+ volume = "65",
+ number = "19",
+ pages = "195124",
+ numpages = "11",
+ year = "2002",
+ month = may,
+ doi = "10.1103/PhysRevB.65.195124",
+ publisher = "American Physical Society",
+ notes = "derivation of albe bond order formalism",
+}
+
+@Article{bean71,
+ author = "A. R. Bean and R. C. Newman",
+ title = "",
+ journal = "J. Phys. Chem. Solids",
+ volume = "32",
+ pages = "1211",
+ year = "1971",
+ notes = "experimental solubility data of carbon in silicon",
+}
+
+@Article{capano97,
+ author = "M. A. Capano and R. J. Trew",
+ title = "Silicon Carbide Electronic Materials and Devices",
+ journal = "MRS Bull.",
+ volume = "22",
+ pages = "19",
+ year = "1997",
+}
+
+@Article{fischer90,
+ author = "G. R. Fisher and P. Barnes",
+ title = "Towards a unified view of polytypism in silicon
+ carbide",
+ journal = "Philosophical Magazine Part B",
+ volume = "61",
+ pages = "217--236",
+ year = "1990",
+ notes = "sic polytypes",
+}
+
+@Book{laplace,
+ author = "P. S. de Laplace",
+ title = "Th\'eorie analytique des probabilit\'es",
+ series = "Oeuvres Compl\`etes de Laplace",
+ volume = "VII",
+ publisher = "Gauthier-Villars",
+ year = "1820",
+}
+
+@Article{mattoni2007,
+ author = "A. {Mattoni} and M. {Ippolito} and L. {Colombo}",
+ title = "{Atomistic modeling of brittleness in covalent
+ materials}",
+ journal = "Phys. Rev. B",
+ year = "2007",
+ month = dec,
+ volume = "76",
+ number = "22",
+ pages = "224103",
+ doi = "10.1103/PhysRevB.76.224103",
+ notes = "adopted tersoff potential for Si, C, Ge ad SiC;
+ longe(r)-range-interactions, brittle propagation of
+ fracture, more available potentials, universal energy
+ relation (uer), minimum range model (mrm)",
+}
+
+@Article{balamane92,
+ title = "Comparative study of silicon empirical interatomic
+ potentials",
+ author = "H. Balamane and T. Halicioglu and W. A. Tiller",
+ journal = "Phys. Rev. B",
+ volume = "46",
+ number = "4",
+ pages = "2250--2279",
+ numpages = "29",
+ year = "1992",
+ month = jul,
+ doi = "10.1103/PhysRevB.46.2250",
+ publisher = "American Physical Society",
+ notes = "comparison of classical potentials for si",
}
@Article{koster2002,
- title = {Stress relaxation in $a-Si$ induced by ion bombardment},
- author = {M. Koster, H. M. Urbassek},
- journal = {Phys. Rev. B},
- volume = {62},
- number = {16},
- pages = {11219--11224},
- numpages = {5},
- year = {2000},
- month = {Oct},
- doi = {10.1103/PhysRevB.62.11219},
- publisher = {American Physical Society},
- notes = {virial derivation for 3-body tersoff potential}
+ title = "Stress relaxation in $a-Si$ induced by ion
+ bombardment",
+ author = "H. M. Urbassek M. Koster",
+ journal = "Phys. Rev. B",
+ volume = "62",
+ number = "16",
+ pages = "11219--11224",
+ numpages = "5",
+ year = "2000",
+ month = oct,
+ doi = "10.1103/PhysRevB.62.11219",
+ publisher = "American Physical Society",
+ notes = "virial derivation for 3-body tersoff potential",
}
@Article{breadmore99,
- title = {Direct simulation of ion-beam-induced stressing
- and amorphization of silicon},
- author = {K. M. Beardmore, N. Gr\o{}nbech-Jensen},
- journal = {Phys. Rev. B},
- volume = {60},
- number = {18},
- pages = {12610--12616},
- numpages = {6},
- year = {1999},
- month = {Nov},
- doi = {10.1103/PhysRevB.60.12610},
- publisher = {American Physical Society},
- notes = {virial derivation for 3-body tersoff potential}
+ title = "Direct simulation of ion-beam-induced stressing and
+ amorphization of silicon",
+ author = "N. Gr\o{}nbech-Jensen K. M. Beardmore",
+ journal = "Phys. Rev. B",
+ volume = "60",
+ number = "18",
+ pages = "12610--12616",
+ numpages = "6",
+ year = "1999",
+ month = nov,
+ doi = "10.1103/PhysRevB.60.12610",
+ publisher = "American Physical Society",
+ notes = "virial derivation for 3-body tersoff potential",
+}
+
+@Article{moissan04,
+ author = "Henri Moissan",
+ title = "Nouvelles recherches sur la météorité de Cañon
+ Diablo",
+ journal = "Comptes rendus de l'Académie des Sciences",
+ volume = "139",
+ pages = "773--786",
+ year = "1904",
+}
+
+@Book{park98,
+ author = "Y. S. Park",
+ title = "Si{C} Materials and Devices",
+ publisher = "Academic Press",
+ address = "San Diego",
+ year = "1998",
+}
+
+@Article{tsvetkov98,
+ author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
+ Calvin H. Carter Jr. and D. Asbury",
+ title = "Si{C} Seeded Boule Growth",
+ journal = "Materials Science Forum",
+ volume = "264-268",
+ pages = "3--8",
+ year = "1998",
+ notes = "modified lely process, micropipes",
}
@Article{verlet67,
- title = {Computer "Experiments" on Classical Fluids. I. Thermodynamical Properties of Lennard-Jones Molecules},
- author = {Verlet, Loup },
- journal = {Phys. Rev.},
- volume = {159},
- number = {1},
- pages = {98},
- year = {1967},
- month = {Jul},
- doi = {10.1103/PhysRev.159.98},
- publisher = {American Physical Society},
- notes = {velocity verlet integration algorithm equation of motion}
+ title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
+ Thermodynamical Properties of Lennard-Jones Molecules",
+ author = "Loup Verlet",
+ journal = "Phys. Rev.",
+ volume = "159",
+ number = "1",
+ pages = "98",
+ year = "1967",
+ month = jul,
+ doi = "10.1103/PhysRev.159.98",
+ publisher = "American Physical Society",
+ notes = "velocity verlet integration algorithm equation of
+ motion",
}
@Article{berendsen84,
- title = {Molecular dynamics with coupling to an external bath},
- author = {H. J. C. Berendsen},
- year = {1984},
- journal = {J. Chem. Phys.},
- volume = {81},
- pages = {3684},
- notes = {berendsen thermostat barostat}
+ author = "H. J. C. Berendsen and J. P. M. Postma and W. F. van
+ Gunsteren and A. DiNola and J. R. Haak",
+ collaboration = "",
+ title = "Molecular dynamics with coupling to an external bath",
+ publisher = "AIP",
+ year = "1984",
+ journal = "The Journal of Chemical Physics",
+ volume = "81",
+ number = "8",
+ pages = "3684--3690",
+ keywords = "MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
+ COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS",
+ URL = "http://link.aip.org/link/?JCP/81/3684/1",
+ doi = "10.1063/1.448118",
+ notes = "berendsen thermostat barostat",
}
-% molecular dynamics: applications
+@Article{huang95,
+ author = "Hanchen Huang and N M Ghoniem and J K Wong and M
+ Baskes",
+ title = "Molecular dynamics determination of defect energetics
+ in beta -Si{C} using three representative empirical
+ potentials",
+ journal = "Modelling and Simulation in Materials Science and
+ Engineering",
+ volume = "3",
+ number = "5",
+ pages = "615--627",
+ URL = "http://stacks.iop.org/0965-0393/3/615",
+ notes = "comparison of tersoff, pearson and eam for defect
+ energetics in sic; (m)eam parameters for sic",
+ year = "1995",
+}
+
+@Article{tersoff89,
+ title = "Relationship between the embedded-atom method and
+ Tersoff potentials",
+ author = "Donald W. Brenner",
+ journal = "Phys. Rev. Lett.",
+ volume = "63",
+ number = "9",
+ pages = "1022",
+ numpages = "1",
+ year = "1989",
+ month = aug,
+ doi = "10.1103/PhysRevLett.63.1022",
+ publisher = "American Physical Society",
+ notes = "relation of tersoff and eam potential",
+}
@Article{batra87,
- title = {Molecular-dynamics study of self-interstitials in silicon},
- author = {Inder P. Batra, Farid F. Abraham, S. Ciraci},
- journal = {Phys. Rev. B},
- volume = {35},
- number = {18},
- pages = {9552--9558},
- numpages = {6},
- year = {1987},
- month = {Jun},
- doi = {10.1103/PhysRevB.35.9552},
- publisher = {American Physical Society},
- notes = {selft-interstitials in silicon, stillinger-weber,
- calculation of defect formation energy, defect interstitial types}
+ title = "Molecular-dynamics study of self-interstitials in
+ silicon",
+ author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
+ journal = "Phys. Rev. B",
+ volume = "35",
+ number = "18",
+ pages = "9552--9558",
+ numpages = "6",
+ year = "1987",
+ month = jun,
+ doi = "10.1103/PhysRevB.35.9552",
+ publisher = "American Physical Society",
+ notes = "selft-interstitials in silicon, stillinger-weber,
+ calculation of defect formation energy, defect
+ interstitial types",
}
@Article{schober89,
- title = {Extended interstitials in silicon and germanium},
- author = {H. R. Schober},
- journal = {Phys. Rev. B},
- volume = {39},
- number = {17},
- pages = {13013--13015},
- numpages = {2},
- year = {1989},
- month = {Jun},
- doi = {10.1103/PhysRevB.39.13013},
- publisher = {American Physical Society},
- notes = {stillinger-weber silicon 110 stable and metastable dumbbell
- configuration}
+ title = "Extended interstitials in silicon and germanium",
+ author = "H. R. Schober",
+ journal = "Phys. Rev. B",
+ volume = "39",
+ number = "17",
+ pages = "13013--13015",
+ numpages = "2",
+ year = "1989",
+ month = jun,
+ doi = "10.1103/PhysRevB.39.13013",
+ publisher = "American Physical Society",
+ notes = "stillinger-weber silicon 110 stable and metastable
+ dumbbell configuration",
}
@Article{gao02,
- title = {Cascade overlap and amorphization in $3C-SiC:$
- Defect accumulation, topological features, and disordering},
- author = {Gao, F. and Weber, W. J.},
- journal = {Phys. Rev. B},
- volume = {66},
- number = {2},
- pages = {024106},
- numpages = {10},
- year = {2002},
- month = {Jul},
- doi = {10.1103/PhysRevB.66.024106},
- publisher = {American Physical Society},
- note = {sic intro, si cascade in 3c-sic, amorphization, tersoff modified,
- pair correlation of amorphous sic, md result analyze}
+ title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
+ Defect accumulation, topological features, and
+ disordering",
+ author = "F. Gao and W. J. Weber",
+ journal = "Phys. Rev. B",
+ volume = "66",
+ number = "2",
+ pages = "024106",
+ numpages = "10",
+ year = "2002",
+ month = jul,
+ doi = "10.1103/PhysRevB.66.024106",
+ publisher = "American Physical Society",
+ notes = "sic intro, si cascade in 3c-sic, amorphization,
+ tersoff modified, pair correlation of amorphous sic, md
+ result analyze",
}
-@Article{batra87,
- title = {SiC/Si heteroepitaxial growth},
- author = {M. Kitabatake},
- journal = {Thin Solid Films},
- volume = {369},
- pages = {257--264},
- numpages = {8},
- year = {2000},
- notes = {md simulation, sic si heteroepitaxy, mbe}
+@Article{devanathan98,
+ title = "Computer simulation of a 10 ke{V} Si displacement
+ cascade in Si{C}",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "141",
+ number = "1-4",
+ pages = "118--122",
+ year = "1998",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(98)00084-6",
+ author = "R. Devanathan and W. J. Weber and T. Diaz de la
+ Rubia",
+ notes = "modified tersoff short range potential, ab initio
+ 3c-sic",
}
-% tight binding
+@Article{devanathan98_2,
+ title = "Displacement threshold energies in [beta]-Si{C}",
+ journal = "Journal of Nuclear Materials",
+ volume = "253",
+ number = "1-3",
+ pages = "47--52",
+ year = "1998",
+ ISSN = "0022-3115",
+ doi = "DOI: 10.1016/S0022-3115(97)00304-8",
+ author = "R. Devanathan and T. Diaz de la Rubia and W. J.
+ Weber",
+ notes = "modified tersoff, ab initio, combined ab initio
+ tersoff",
+}
+
+@Article{batra87,
+ title = "Si{C}/Si heteroepitaxial growth",
+ author = "M. Kitabatake",
+ journal = "Thin Solid Films",
+ volume = "369",
+ pages = "257--264",
+ numpages = "8",
+ year = "2000",
+ notes = "md simulation, sic si heteroepitaxy, mbe",
+}
@Article{tang97,
- title = {Intrinsic point defects in crystalline silicon:
- Tight-binding molecular dynamics studiesof self-diffusion,
- interstitial-vacancy recombination, and formation volumes},
- author = {M. Tang, L. Colombo, J. Zhu, T. Diaz de la Rubia},
- journal = {Phys. Rev. B},
- volume = {55},
- number = {21},
- pages = {14279--14289},
- numpages = {10},
- year = {1997},
- month = {Jun},
- doi = {10.1103/PhysRevB.55.14279},
- publisher = {American Physical Society},
- notes = {si self interstitial, diffusion, tbmd}
+ title = "Intrinsic point defects in crystalline silicon:
+ Tight-binding molecular dynamics studies of
+ self-diffusion, interstitial-vacancy recombination, and
+ formation volumes",
+ author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
+ Rubia",
+ journal = "Phys. Rev. B",
+ volume = "55",
+ number = "21",
+ pages = "14279--14289",
+ numpages = "10",
+ year = "1997",
+ month = jun,
+ doi = "10.1103/PhysRevB.55.14279",
+ publisher = "American Physical Society",
+ notes = "si self interstitial, diffusion, tbmd",
}
@Article{tang97,
- title = {Tight-binding theory of native point defects in silicon},
- author = {L. Colombo},
- journal = {Annu. Rev. Mater. Res.},
- volume = {32},
- pages = {271--295},
- numpages = {25},
- year = {2002},
- doi = {10.1146/annurev.matsci.32.111601.103036},
- publisher = {Annual Reviews},
- notes = {si self interstitial, tbmd, virial stress}
+ title = "Tight-binding theory of native point defects in
+ silicon",
+ author = "L. Colombo",
+ journal = "Annu. Rev. Mater. Res.",
+ volume = "32",
+ pages = "271--295",
+ numpages = "25",
+ year = "2002",
+ doi = "10.1146/annurev.matsci.32.111601.103036",
+ publisher = "Annual Reviews",
+ notes = "si self interstitial, tbmd, virial stress",
+}
+
+@Article{al-mushadani03,
+ title = "Free-energy calculations of intrinsic point defects in
+ silicon",
+ author = "O. K. Al-Mushadani and R. J. Needs",
+ journal = "Phys. Rev. B",
+ volume = "68",
+ number = "23",
+ pages = "235205",
+ numpages = "8",
+ year = "2003",
+ month = dec,
+ doi = "10.1103/PhysRevB.68.235205",
+ publisher = "American Physical Society",
+ notes = "formation energies of intrinisc point defects in
+ silicon, si self interstitials",
}
-% mixed
+@Article{ma10,
+ title = "Ab initio study of self-diffusion in silicon over a
+ wide temperature range: Point defect states and
+ migration mechanisms",
+ author = "Shangyi Ma and Shaoqing Wang",
+ journal = "Phys. Rev. B",
+ volume = "81",
+ number = "19",
+ pages = "193203",
+ numpages = "4",
+ year = "2010",
+ month = may,
+ doi = "10.1103/PhysRevB.81.193203",
+ publisher = "American Physical Society",
+ notes = "si self interstitial diffusion + refs",
+}
@Article{gao2001,
- title = {Ab initio and empirical-potential studies of defect properties
- in $3C-SiC$ },
- author = {F. Gao, E. J. Bylaska, W. J. Weber, L. R. Corrales},
- journal = {Phys. Rev. B},
- volume = {64},
- number = {24},
- pages = {245208},
- numpages = {7},
- year = {2001},
- month = {Dec},
- doi = {10.1103/PhysRevB.64.245208},
- publisher = {American Physical Society},
- notes = {defects in 3c-sic}
-}
-
-% ab initio
+ title = "Ab initio and empirical-potential studies of defect
+ properties in $3{C}-Si{C}$",
+ author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
+ Corrales",
+ journal = "Phys. Rev. B",
+ volume = "64",
+ number = "24",
+ pages = "245208",
+ numpages = "7",
+ year = "2001",
+ month = dec,
+ doi = "10.1103/PhysRevB.64.245208",
+ publisher = "American Physical Society",
+ notes = "defects in 3c-sic",
+}
+
+@Article{mattoni2002,
+ title = "Self-interstitial trapping by carbon complexes in
+ crystalline silicon",
+ author = "A. Mattoni and F. Bernardini and L. Colombo",
+ journal = "Phys. Rev. B",
+ volume = "66",
+ number = "19",
+ pages = "195214",
+ numpages = "6",
+ year = "2002",
+ month = nov,
+ doi = "10.1103/PhysRevB.66.195214",
+ publisher = "American Physical Society",
+ notes = "c in c-si, diffusion, interstitial configuration +
+ links, interaction of carbon and silicon
+ interstitials",
+}
@Article{leung99,
- title = {Calculations of Silicon Self-Interstitial Defects},
- author = {Leung, W.-K. and Needs, R. J. and Rajagopal, G. and
- Itoh, S. and Ihara, S. },
- journal = {Phys. Rev. Lett.},
- volume = {83},
- number = {12},
- pages = {2351--2354},
- numpages = {3},
- year = {1999},
- month = {Sep},
- doi = {10.1103/PhysRevLett.83.2351},
- publisher = {American Physical Society},
- notes = {nice images of the defects}
-}
-
-@Article{PhysRevB.50.7439,
- title = {Identification of the migration path of interstitial carbon
- in silicon},
- author = {R. B. Capazd, A Dal Pino, J. D. Joannopoulos},
- journal = {Phys. Rev. B},
- volume = {50},
- number = {11},
- pages = {7439--7442},
- numpages = {3},
- year = {1994},
- month = {Sep},
- doi = {10.1103/PhysRevB.50.7439},
- publisher = {American Physical Society},
- notes = {carbon interstitial migration path shown, 001 c-si dumbbell}
-}
-
-% experimental stuff - interstitials
+ title = "Calculations of Silicon Self-Interstitial Defects",
+ author = "W.-K. Leung and R. J. Needs and G. Rajagopal and S.
+ Itoh and S. Ihara",
+ journal = "Phys. Rev. Lett.",
+ volume = "83",
+ number = "12",
+ pages = "2351--2354",
+ numpages = "3",
+ year = "1999",
+ month = sep,
+ doi = "10.1103/PhysRevLett.83.2351",
+ publisher = "American Physical Society",
+ notes = "nice images of the defects, si defect overview +
+ refs",
+}
+
+@Article{capaz94,
+ title = "Identification of the migration path of interstitial
+ carbon in silicon",
+ author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos",
+ journal = "Phys. Rev. B",
+ volume = "50",
+ number = "11",
+ pages = "7439--7442",
+ numpages = "3",
+ year = "1994",
+ month = sep,
+ doi = "10.1103/PhysRevB.50.7439",
+ publisher = "American Physical Society",
+ notes = "carbon interstitial migration path shown, 001 c-si
+ dumbbell",
+}
+
+@Article{dal_pino93,
+ title = "Ab initio investigation of carbon-related defects in
+ silicon",
+ author = "A. Dal Pino and Andrew M. Rappe and J. D.
+ Joannopoulos",
+ journal = "Phys. Rev. B",
+ volume = "47",
+ number = "19",
+ pages = "12554--12557",
+ numpages = "3",
+ year = "1993",
+ month = may,
+ doi = "10.1103/PhysRevB.47.12554",
+ publisher = "American Physical Society",
+ notes = "c interstitials in crystalline silicon",
+}
+
+@Article{car84,
+ title = "Microscopic Theory of Atomic Diffusion Mechanisms in
+ Silicon",
+ author = "Roberto Car and Paul J. Kelly and Atsushi Oshiyama and
+ Sokrates T. Pantelides",
+ journal = "Phys. Rev. Lett.",
+ volume = "52",
+ number = "20",
+ pages = "1814--1817",
+ numpages = "3",
+ year = "1984",
+ month = may,
+ doi = "10.1103/PhysRevLett.52.1814",
+ publisher = "American Physical Society",
+ notes = "microscopic theory diffusion silicon dft migration
+ path formation",
+}
+
+@Article{kelires97,
+ title = "Short-range order, bulk moduli, and physical trends in
+ c-$Si1-x$$Cx$ alloys",
+ author = "P. C. Kelires",
+ journal = "Phys. Rev. B",
+ volume = "55",
+ number = "14",
+ pages = "8784--8787",
+ numpages = "3",
+ year = "1997",
+ month = apr,
+ doi = "10.1103/PhysRevB.55.8784",
+ publisher = "American Physical Society",
+ notes = "c strained si, montecarlo md, bulk moduli, next
+ neighbour dist",
+}
+
+@Article{kelires95,
+ title = "Monte Carlo Studies of Ternary Semiconductor Alloys:
+ Application to the $Si1-x-yGexCy$ System",
+ author = "P. C. Kelires",
+ journal = "Phys. Rev. Lett.",
+ volume = "75",
+ number = "6",
+ pages = "1114--1117",
+ numpages = "3",
+ year = "1995",
+ month = aug,
+ doi = "10.1103/PhysRevLett.75.1114",
+ publisher = "American Physical Society",
+ notes = "mc md, strain compensation in si ge by c insertion",
+}
+
+@Article{bean70,
+ title = "Low temperature electron irradiation of silicon
+ containing carbon",
+ journal = "Solid State Communications",
+ volume = "8",
+ number = "3",
+ pages = "175--177",
+ year = "1970",
+ note = "",
+ ISSN = "0038-1098",
+ doi = "DOI: 10.1016/0038-1098(70)90074-8",
+ URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
+ author = "A. R. Bean and R. C. Newman",
+}
@Article{watkins76,
- title = {EPR Observation of the Isolated Interstitial Carbon Atom in Silicon},
- author = {G. D. Watkins and K. L. Brower},
- journal = {Phys. Rev. Lett.},
- volume = {36},
- number = {22},
- pages = {1329--1332},
- numpages = {3},
- year = {1976},
- month = {May},
- doi = {10.1103/PhysRevLett.36.1329},
- publisher = {American Physical Society},
- notes = {epr observations of 100 interstitial carbon atom in silicon}
+ title = "{EPR} Observation of the Isolated Interstitial Carbon
+ Atom in Silicon",
+ author = "G. D. Watkins and K. L. Brower",
+ journal = "Phys. Rev. Lett.",
+ volume = "36",
+ number = "22",
+ pages = "1329--1332",
+ numpages = "3",
+ year = "1976",
+ month = may,
+ doi = "10.1103/PhysRevLett.36.1329",
+ publisher = "American Physical Society",
+ notes = "epr observations of 100 interstitial carbon atom in
+ silicon",
}
@Article{song90,
- title = {EPR identification of the single-acceptor state of interstitial carbon in silicon},
- author = {L. W. Song, G. D. Watkins},
- journal = {Phys. Rev. B},
- volume = {42},
- number = {9},
- pages = {5759--5764},
- numpages = {5},
- year = {1990},
- month = {Sep},
- doi = {10.1103/PhysRevB.42.5759},
- publisher = {American Physical Society}
+ title = "{EPR} identification of the single-acceptor state of
+ interstitial carbon in silicon",
+ author = "G. D. Watkins L. W. Song",
+ journal = "Phys. Rev. B",
+ volume = "42",
+ number = "9",
+ pages = "5759--5764",
+ numpages = "5",
+ year = "1990",
+ month = sep,
+ doi = "10.1103/PhysRevB.42.5759",
+ publisher = "American Physical Society",
+ notes = "carbon diffusion in silicon",
}
-% experimental stuff - strained silicon
+@Article{tipping87,
+ author = "A K Tipping and R C Newman",
+ title = "The diffusion coefficient of interstitial carbon in
+ silicon",
+ journal = "Semiconductor Science and Technology",
+ volume = "2",
+ number = "5",
+ pages = "315--317",
+ URL = "http://stacks.iop.org/0268-1242/2/315",
+ year = "1987",
+ notes = "diffusion coefficient of carbon interstitials in
+ silicon",
+}
@Article{strane96,
- title = {Carbon incorporation into Si at high concentrations
- by ion implantation and solid phase epitaxy},
- author = {J. W. Strane, S. R. Lee, H. J. Stein, S. T. Picraux,
- J.K. Watanabe, J. W. Mayer},
- journal = {J. Appl. Phys.},
- volume = {79},
- pages = {637},
- year = {1996},
- month = {January},
- doi = {10.1063/1.360806},
- notes = {strained silicon, carbon supersaturation}
-}
-
-% sic formation mechanism
-
-@article{werner97,
- author = {P. Werner and S. Eichler and G. Mariani and R. K\"{o}gler and W. Skorupa},
- title = {Investigation of C[sub x]Si defects in C implanted silicon by transmission electron microscopy},
- publisher = {AIP},
- year = {1997},
- journal = {Applied Physics Letters},
- volume = {70},
- number = {2},
- pages = {252-254},
- keywords = {silicon; ion implantation; carbon; crystal defects;
- transmission electron microscopy; annealing;
- positron annihilation; secondary ion mass spectroscopy;
- buried layers; precipitation},
- url = {http://link.aip.org/link/?APL/70/252/1},
- doi = {10.1063/1.118381},
- notes = {si-c complexes, agglomerate, sic in si matrix, sic precipitate}
-}
-
-@article{strane94,
- author = {J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and
- J. K. Watanabe and J. W. Mayer},
- collaboration = {},
- title = {Precipitation and relaxation in strained
- Si[sub 1 - y]C[sub y]/Si heterostructures},
- publisher = {AIP},
- year = {1994},
- journal = {Journal of Applied Physics},
- volume = {76},
- number = {6},
- pages = {3656-3668},
- keywords = {SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS},
- url = {http://link.aip.org/link/?JAP/76/3656/1},
- doi = {10.1063/1.357429},
- notes = {strained si-c to 3c-sic, carbon nucleation + refs}
-}
-
-% properties sic
+ title = "Carbon incorporation into Si at high concentrations by
+ ion implantation and solid phase epitaxy",
+ author = "J. W. Strane and S. R. Lee and H. J. Stein and S. T.
+ Picraux and J. K. Watanabe and J. W. Mayer",
+ journal = "J. Appl. Phys.",
+ volume = "79",
+ pages = "637",
+ year = "1996",
+ month = jan,
+ doi = "10.1063/1.360806",
+ notes = "strained silicon, carbon supersaturation",
+}
+
+@Article{laveant2002,
+ title = "Epitaxy of carbon-rich silicon with {MBE}",
+ author = "P. Laveant and G. Gerth and P. Werner and U.
+ G{\"o}sele",
+ journal = "Materials Science and Engineering B",
+ volume = "89",
+ number = "1-3",
+ pages = "241--245",
+ keywords = "Growth; Epitaxy; MBE; Carbon; Silicon",
+ notes = "low c in si, tensile stress to compensate compressive
+ stress, avoid sic precipitation",
+}
+
+@Article{werner97,
+ author = "P. Werner and S. Eichler and G. Mariani and R.
+ K{\"{o}}gler and W. Skorupa",
+ title = "Investigation of {C}[sub x]Si defects in {C} implanted
+ silicon by transmission electron microscopy",
+ publisher = "AIP",
+ year = "1997",
+ journal = "Applied Physics Letters",
+ volume = "70",
+ number = "2",
+ pages = "252--254",
+ keywords = "silicon; ion implantation; carbon; crystal defects;
+ transmission electron microscopy; annealing; positron
+ annihilation; secondary ion mass spectroscopy; buried
+ layers; precipitation",
+ URL = "http://link.aip.org/link/?APL/70/252/1",
+ doi = "10.1063/1.118381",
+ notes = "si-c complexes, agglomerate, sic in si matrix, sic
+ precipitate",
+}
+
+@Article{strane94,
+ author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
+ Picraux and J. K. Watanabe and J. W. Mayer",
+ collaboration = "",
+ title = "Precipitation and relaxation in strained Si[sub 1 -
+ y]{C}[sub y]/Si heterostructures",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Journal of Applied Physics",
+ volume = "76",
+ number = "6",
+ pages = "3656--3668",
+ keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
+ URL = "http://link.aip.org/link/?JAP/76/3656/1",
+ doi = "10.1063/1.357429",
+ notes = "strained si-c to 3c-sic, carbon nucleation + refs",
+}
@Article{edgar92,
- title = {Prospects for device implementation of wide band gap semiconductors},
- author = {J. H. Edgar},
- journal = {J. Mater. Res.},
- volume = {7},
- pages = {235},
- year = {1992},
- month = {January},
- doi = {10.1557/JMR.1992.0235},
- notes = {properties wide band gap semiconductor, sic polytypes}
-}
-
-% my own publications
-
-@article{zirkelbach2007,
- title = {Monte Carlo simulation study of a selforganisation process
- leading to ordered precipitate structures},
- author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
- journal = {Nucl. Instr. and Meth. B},
- volume = {257},
- number = {1--2},
- pages = {75--79},
- numpages = {5},
- year = {2007},
- month = {Apr},
- doi = {doi:10.1016/j.nimb.2006.12.118},
- publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
-}
-
-@article{zirkelbach2006,
- title = {Monte-Carlo simulation study of the self-organization of nanometric
- amorphous precipitates in regular arrays during ion irradiation},
- author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
- journal = {Nucl. Instr. and Meth. B},
- volume = {242},
- number = {1--2},
- pages = {679--682},
- numpages = {4},
- year = {2006},
- month = {Jan},
- doi = {doi:10.1016/j.nimb.2005.08.162},
- publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
-}
-
-@article{zirkelbach2005,
- title = {Modelling of a selforganization process leading to periodic arrays
- of nanometric amorphous precipitates by ion irradiation},
- author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
- journal = {Comp. Mater. Sci.},
- volume = {33},
- number = {1--3},
- pages = {310--316},
- numpages = {7},
- year = {2005},
- month = {Apr},
- doi = {doi:10.1016/j.commatsci.2004.12.016},
- publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
-}
-
-% the one of my boss
+ title = "Prospects for device implementation of wide band gap
+ semiconductors",
+ author = "J. H. Edgar",
+ journal = "J. Mater. Res.",
+ volume = "7",
+ pages = "235",
+ year = "1992",
+ month = jan,
+ doi = "10.1557/JMR.1992.0235",
+ notes = "properties wide band gap semiconductor, sic
+ polytypes",
+}
+
+@Article{zirkelbach2007,
+ title = "Monte Carlo simulation study of a selforganisation
+ process leading to ordered precipitate structures",
+ author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
+ and B. Stritzker",
+ journal = "Nucl. Instr. and Meth. B",
+ volume = "257",
+ number = "1--2",
+ pages = "75--79",
+ numpages = "5",
+ year = "2007",
+ month = apr,
+ doi = "doi:10.1016/j.nimb.2006.12.118",
+ publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
+ NETHERLANDS",
+}
+
+@Article{zirkelbach2006,
+ title = "Monte-Carlo simulation study of the self-organization
+ of nanometric amorphous precipitates in regular arrays
+ during ion irradiation",
+ author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
+ and B. Stritzker",
+ journal = "Nucl. Instr. and Meth. B",
+ volume = "242",
+ number = "1--2",
+ pages = "679--682",
+ numpages = "4",
+ year = "2006",
+ month = jan,
+ doi = "doi:10.1016/j.nimb.2005.08.162",
+ publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
+ NETHERLANDS",
+}
+
+@Article{zirkelbach2005,
+ title = "Modelling of a selforganization process leading to
+ periodic arrays of nanometric amorphous precipitates by
+ ion irradiation",
+ author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
+ and B. Stritzker",
+ journal = "Comp. Mater. Sci.",
+ volume = "33",
+ number = "1--3",
+ pages = "310--316",
+ numpages = "7",
+ year = "2005",
+ month = apr,
+ doi = "doi:10.1016/j.commatsci.2004.12.016",
+ publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
+ NETHERLANDS",
+}
+
+@Article{lindner99,
+ title = "Controlling the density distribution of Si{C}
+ nanocrystals for the ion beam synthesis of buried Si{C}
+ layers in silicon",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "147",
+ number = "1-4",
+ pages = "249--255",
+ year = "1999",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(98)00598-9",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
+ author = "J. K. N. Lindner and B. Stritzker",
+ notes = "two-step implantation process",
+}
+
+@Article{lindner99_2,
+ title = "Mechanisms in the ion beam synthesis of Si{C} layers
+ in silicon",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "148",
+ number = "1-4",
+ pages = "528--533",
+ year = "1999",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(98)00787-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
+ author = "J. K. N. Lindner and B. Stritzker",
+}
+
+@Article{lindner01,
+ title = "Ion beam synthesis of buried Si{C} layers in silicon:
+ Basic physical processes",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "178",
+ number = "1-4",
+ pages = "44--54",
+ year = "2001",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(01)00504-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
+ author = "Jörg K. N. Lindner",
+}
@Article{lindner02,
- title = {High-dose carbon implantations into silicon:
- fundamental studies for new technological tricks},
- author = {J. K. N. Lindner},
- journal = {Appl. Phys. A},
- volume = {77},
- pages = {27--38},
- year = {2003},
- doi = {10.1007/s00339-002-2062-8},
- notes = {ibs, burried sic layers}
+ title = "High-dose carbon implantations into silicon:
+ fundamental studies for new technological tricks",
+ author = "J. K. N. Lindner",
+ journal = "Appl. Phys. A",
+ volume = "77",
+ pages = "27--38",
+ year = "2003",
+ doi = "10.1007/s00339-002-2062-8",
+ notes = "ibs, burried sic layers",
+}
+
+@Article{alder57,
+ author = "B. J. Alder and T. E. Wainwright",
+ title = "Phase Transition for a Hard Sphere System",
+ publisher = "AIP",
+ year = "1957",
+ journal = "The Journal of Chemical Physics",
+ volume = "27",
+ number = "5",
+ pages = "1208--1209",
+ URL = "http://link.aip.org/link/?JCP/27/1208/1",
+ doi = "10.1063/1.1743957",
+}
+
+@Article{alder59,
+ author = "B. J. Alder and T. E. Wainwright",
+ title = "Studies in Molecular Dynamics. {I}. General Method",
+ publisher = "AIP",
+ year = "1959",
+ journal = "The Journal of Chemical Physics",
+ volume = "31",
+ number = "2",
+ pages = "459--466",
+ URL = "http://link.aip.org/link/?JCP/31/459/1",
+ doi = "10.1063/1.1730376",
+}
+
+@Article{tersoff_si1,
+ title = "New empirical model for the structural properties of
+ silicon",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. Lett.",
+ volume = "56",
+ number = "6",
+ pages = "632--635",
+ numpages = "3",
+ year = "1986",
+ month = feb,
+ doi = "10.1103/PhysRevLett.56.632",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_si2,
+ title = "New empirical approach for the structure and energy of
+ covalent systems",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. B",
+ volume = "37",
+ number = "12",
+ pages = "6991--7000",
+ numpages = "9",
+ year = "1988",
+ month = apr,
+ doi = "10.1103/PhysRevB.37.6991",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_si3,
+ title = "Empirical interatomic potential for silicon with
+ improved elastic properties",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. B",
+ volume = "38",
+ number = "14",
+ pages = "9902--9905",
+ numpages = "3",
+ year = "1988",
+ month = nov,
+ doi = "10.1103/PhysRevB.38.9902",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_c,
+ title = "Empirical Interatomic Potential for Carbon, with
+ Applications to Amorphous Carbon",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. Lett.",
+ volume = "61",
+ number = "25",
+ pages = "2879--2882",
+ numpages = "3",
+ year = "1988",
+ month = dec,
+ doi = "10.1103/PhysRevLett.61.2879",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff_m,
+ title = "Modeling solid-state chemistry: Interatomic potentials
+ for multicomponent systems",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. B",
+ volume = "39",
+ number = "8",
+ pages = "5566--5568",
+ numpages = "2",
+ year = "1989",
+ month = mar,
+ doi = "10.1103/PhysRevB.39.5566",
+ publisher = "American Physical Society",
+}
+
+@Article{tersoff90,
+ title = "Carbon defects and defect reactions in silicon",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. Lett.",
+ volume = "64",
+ number = "15",
+ pages = "1757--1760",
+ numpages = "3",
+ year = "1990",
+ month = apr,
+ doi = "10.1103/PhysRevLett.64.1757",
+ publisher = "American Physical Society",
+}
+
+@Article{fahey89,
+ title = "Point defects and dopant diffusion in silicon",
+ author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
+ journal = "Rev. Mod. Phys.",
+ volume = "61",
+ number = "2",
+ pages = "289--384",
+ numpages = "95",
+ year = "1989",
+ month = apr,
+ doi = "10.1103/RevModPhys.61.289",
+ publisher = "American Physical Society",
+}
+
+@Article{wesch96,
+ title = "Silicon carbide: synthesis and processing",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "116",
+ number = "1-4",
+ pages = "305--321",
+ year = "1996",
+ note = "Radiation Effects in Insulators",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/0168-583X(96)00065-1",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-3VXHNFT-C7/2/4216cb1ec9e422c22de5fed7360fb06e",
+ author = "W. Wesch",
+}
+
+@Article{morkoc94,
+ author = "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
+ Lin and B. Sverdlov and M. Burns",
+ collaboration = "",
+ title = "Large-band-gap Si{C}, {III}-{V} nitride, and {II}-{VI}
+ ZnSe-based semiconductor device technologies",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Journal of Applied Physics",
+ volume = "76",
+ number = "3",
+ pages = "1363--1398",
+ keywords = "SEMICONDUCTOR DEVICES; SILICON CARBIDES; GALLIUM
+ NITRIDES; ZINC SELENIDES; SUBSTRATES; MOS JUNCTIONS;
+ LASER MATERIALS; MATERIALS; REVIEWS; ENERGY GAP; THIN
+ FILMS; INDUSTRY",
+ URL = "http://link.aip.org/link/?JAP/76/1363/1",
+ doi = "10.1063/1.358463",
+}
+
+@Article{foo,
+ author = "Noch Unbekannt",
+ title = "How to find references",
+ journal = "Journal of Applied References",
+ year = "2009",
+ volume = "77",
+ pages = "1--23",
+}
+
+@Article{tang95,
+ title = "Atomistic simulation of thermomechanical properties of
+ \beta{}-Si{C}",
+ author = "Meijie Tang and Sidney Yip",
+ journal = "Phys. Rev. B",
+ volume = "52",
+ number = "21",
+ pages = "15150--15159",
+ numpages = "9",
+ year = "1995",
+ doi = "10.1103/PhysRevB.52.15150",
+ notes = "modified tersoff, scale cutoff with volume, promising
+ tersoff reparametrization",
+ publisher = "American Physical Society",
+}
+
+@Article{sarro00,
+ title = "Silicon carbide as a new {MEMS} technology",
+ journal = "Sensors and Actuators A: Physical",
+ volume = "82",
+ number = "1-3",
+ pages = "210--218",
+ year = "2000",
+ ISSN = "0924-4247",
+ doi = "DOI: 10.1016/S0924-4247(99)00335-0",
+ URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
+ author = "Pasqualina M. Sarro",
+ keywords = "MEMS",
+ keywords = "Silicon carbide",
+ keywords = "Micromachining",
+ keywords = "Mechanical stress",
}
+@Article{casady96,
+ title = "Status of silicon carbide (Si{C}) as a wide-bandgap
+ semiconductor for high-temperature applications: {A}
+ review",
+ journal = "Solid-State Electronics",
+ volume = "39",
+ number = "10",
+ pages = "1409--1422",
+ year = "1996",
+ ISSN = "0038-1101",
+ doi = "DOI: 10.1016/0038-1101(96)00045-7",
+ URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
+ author = "J. B. Casady and R. W. Johnson",
+}
+
+@Article{giancarli98,
+ title = "Design requirements for Si{C}/Si{C} composites
+ structural material in fusion power reactor blankets",
+ journal = "Fusion Engineering and Design",
+ volume = "41",
+ number = "1-4",
+ pages = "165--171",
+ year = "1998",
+ ISSN = "0920-3796",
+ doi = "DOI: 10.1016/S0920-3796(97)00200-7",
+ URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
+ author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
+ Marois and N. B. Morley and J. F. Salavy",
+}
+
+@Article{pensl93,
+ title = "Electrical and optical characterization of Si{C}",
+ journal = "Physica B: Condensed Matter",
+ volume = "185",
+ number = "1-4",
+ pages = "264--283",
+ year = "1993",
+ ISSN = "0921-4526",
+ doi = "DOI: 10.1016/0921-4526(93)90249-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
+ author = "G. Pensl and W. J. Choyke",
+}
+
+@Article{tairov78,
+ title = "Investigation of growth processes of ingots of silicon
+ carbide single crystals",
+ journal = "Journal of Crystal Growth",
+ volume = "43",
+ number = "2",
+ pages = "209--212",
+ year = "1978",
+ notes = "modifief lely process",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(78)90169-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
+ author = "Yu. M. Tairov and V. F. Tsvetkov",
+}
+
+@Article{nishino83,
+ author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
+ Will",
+ collaboration = "",
+ title = "Production of large-area single-crystal wafers of
+ cubic Si{C} for semiconductor devices",
+ publisher = "AIP",
+ year = "1983",
+ journal = "Applied Physics Letters",
+ volume = "42",
+ number = "5",
+ pages = "460--462",
+ keywords = "silicon carbides; layers; chemical vapor deposition;
+ monocrystals",
+ URL = "http://link.aip.org/link/?APL/42/460/1",
+ doi = "10.1063/1.93970",
+ notes = "cvd of 3c-sic on si, sic buffer layer",
+}
+
+@Article{nishino:4889,
+ author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
+ and Hiroyuki Matsunami",
+ collaboration = "",
+ title = "Epitaxial growth and electric characteristics of cubic
+ Si{C} on silicon",
+ publisher = "AIP",
+ year = "1987",
+ journal = "Journal of Applied Physics",
+ volume = "61",
+ number = "10",
+ pages = "4889--4893",
+ URL = "http://link.aip.org/link/?JAP/61/4889/1",
+ doi = "10.1063/1.338355",
+ notes = "cvd of 3c-sic on si, sic buffer layer, first time
+ carbonization",
+}
+
+@Article{powell87,
+ author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
+ Kuczmarski",
+ title = "Growth and Characterization of Cubic Si{C}
+ Single-Crystal Films on Si",
+ publisher = "ECS",
+ year = "1987",
+ journal = "Journal of The Electrochemical Society",
+ volume = "134",
+ number = "6",
+ pages = "1558--1565",
+ keywords = "semiconductor materials; silicon compounds; carbon
+ compounds; crystal morphology; electron mobility",
+ URL = "http://link.aip.org/link/?JES/134/1558/1",
+ doi = "10.1149/1.2100708",
+ notes = "blue light emitting diodes (led)",
+}
+
+@Article{kimoto93,
+ author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
+ and Hiroyuki Matsunami",
+ title = "Growth mechanism of 6{H}-Si{C} in step-controlled
+ epitaxy",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Journal of Applied Physics",
+ volume = "73",
+ number = "2",
+ pages = "726--732",
+ keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
+ RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
+ VAPOR DEPOSITION",
+ URL = "http://link.aip.org/link/?JAP/73/726/1",
+ doi = "10.1063/1.353329",
+ notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
+}
+
+@Article{powell90,
+ author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
+ J. Choyke and J. L. Bradshaw and L. Henderson and M.
+ Yoganathan and J. Yang and P. Pirouz",
+ collaboration = "",
+ title = "Growth of improved quality 3{C}-Si{C} films on
+ 6{H}-Si{C} substrates",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Applied Physics Letters",
+ volume = "56",
+ number = "14",
+ pages = "1353--1355",
+ keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
+ PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
+ MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
+ PHASE EPITAXY",
+ URL = "http://link.aip.org/link/?APL/56/1353/1",
+ doi = "10.1063/1.102512",
+ notes = "cvd of 3c-sic on 6h-sic",
+}
+
+@Article{yuan95,
+ author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
+ Thokala and M. J. Loboda",
+ collaboration = "",
+ title = "Reduced temperature growth of crystalline 3{C}-Si{C}
+ films on 6{H}-Si{C} by chemical vapor deposition from
+ silacyclobutane",
+ publisher = "AIP",
+ year = "1995",
+ journal = "Journal of Applied Physics",
+ volume = "78",
+ number = "2",
+ pages = "1271--1273",
+ keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
+ EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
+ SPECTROPHOTOMETRY",
+ URL = "http://link.aip.org/link/?JAP/78/1271/1",
+ doi = "10.1063/1.360368",
+ notes = "3c-sic on 6h-sic, cvd, reduced temperature",
+}
+
+@Article{fissel95,
+ title = "Epitaxial growth of Si{C} thin films on Si-stabilized
+ [alpha]-Si{C}(0001) at low temperatures by solid-source
+ molecular beam epitaxy",
+ journal = "Journal of Crystal Growth",
+ volume = "154",
+ number = "1-2",
+ pages = "72--80",
+ year = "1995",
+ notes = "solid source mbe",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(95)00170-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
+ author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
+ and W. Richter",
+}
+
+@Article{borders71,
+ author = "J. A. Borders and S. T. Picraux and W. Beezhold",
+ collaboration = "",
+ title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
+ {IMPLANTATION}",
+ publisher = "AIP",
+ year = "1971",
+ journal = "Applied Physics Letters",
+ volume = "18",
+ number = "11",
+ pages = "509--511",
+ URL = "http://link.aip.org/link/?APL/18/509/1",
+ notes = "first time sic by ibs",
+ doi = "10.1063/1.1653516",
+}
+
+@Article{reeson87,
+ author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
+ J. Davis and G. E. Celler",
+ collaboration = "",
+ title = "Formation of buried layers of beta-Si{C} using ion
+ beam synthesis and incoherent lamp annealing",
+ publisher = "AIP",
+ year = "1987",
+ journal = "Applied Physics Letters",
+ volume = "51",
+ number = "26",
+ pages = "2242--2244",
+ keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
+ IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
+ URL = "http://link.aip.org/link/?APL/51/2242/1",
+ doi = "10.1063/1.98953",
+ notes = "nice tem images, sic by ibs",
+}
+
+@Article{scace59,
+ author = "R. I. Scace and G. A. Slack",
+ collaboration = "",
+ title = "Solubility of Carbon in Silicon and Germanium",
+ publisher = "AIP",
+ year = "1959",
+ journal = "The Journal of Chemical Physics",
+ volume = "30",
+ number = "6",
+ pages = "1551--1555",
+ URL = "http://link.aip.org/link/?JCP/30/1551/1",
+ doi = "10.1063/1.1730236",
+ notes = "solubility of c in c-si",
+}
+
+@Article{cowern96,
+ author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
+ F. W. Saris and W. Vandervorst",
+ collaboration = "",
+ title = "Role of {C} and {B} clusters in transient diffusion of
+ {B} in silicon",
+ publisher = "AIP",
+ year = "1996",
+ journal = "Applied Physics Letters",
+ volume = "68",
+ number = "8",
+ pages = "1150--1152",
+ keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
+ DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
+ SILICON",
+ URL = "http://link.aip.org/link/?APL/68/1150/1",
+ doi = "10.1063/1.115706",
+ notes = "suppression of transient enhanced diffusion (ted)",
+}
+
+@Article{stolk95,
+ title = "Implantation and transient boron diffusion: the role
+ of the silicon self-interstitial",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "96",
+ number = "1-2",
+ pages = "187--195",
+ year = "1995",
+ note = "Selected Papers of the Tenth International Conference
+ on Ion Implantation Technology (IIT '94)",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/0168-583X(94)00481-1",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
+ author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
+ and J. M. Poate",
+}
+
+@Article{stolk97,
+ author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
+ D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
+ M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
+ E. Haynes",
+ collaboration = "",
+ title = "Physical mechanisms of transient enhanced dopant
+ diffusion in ion-implanted silicon",
+ publisher = "AIP",
+ year = "1997",
+ journal = "Journal of Applied Physics",
+ volume = "81",
+ number = "9",
+ pages = "6031--6050",
+ URL = "http://link.aip.org/link/?JAP/81/6031/1",
+ doi = "10.1063/1.364452",
+ notes = "ted, transient enhanced diffusion, c silicon trap",
+}
+
+@Article{powell94,
+ author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
+ collaboration = "",
+ title = "Formation of beta-Si{C} nanocrystals by the relaxation
+ of Si[sub 1 - y]{C}[sub y] random alloy layers",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Applied Physics Letters",
+ volume = "64",
+ number = "3",
+ pages = "324--326",
+ keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
+ EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
+ TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
+ SYNTHESIS",
+ URL = "http://link.aip.org/link/?APL/64/324/1",
+ doi = "10.1063/1.111195",
+ notes = "beta sic nano crystals in si, mbe, annealing",
+}
+
+@Article{soref91,
+ author = "Richard A. Soref",
+ collaboration = "",
+ title = "Optical band gap of the ternary semiconductor Si[sub 1
+ - x - y]Ge[sub x]{C}[sub y]",
+ publisher = "AIP",
+ year = "1991",
+ journal = "Journal of Applied Physics",
+ volume = "70",
+ number = "4",
+ pages = "2470--2472",
+ keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
+ OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
+ TERNARY ALLOYS",
+ URL = "http://link.aip.org/link/?JAP/70/2470/1",
+ doi = "10.1063/1.349403",
+ notes = "band gap of strained si by c",
+}
+
+@Article{kasper91,
+ author = "E Kasper",
+ title = "Superlattices of group {IV} elements, a new
+ possibility to produce direct band gap material",
+ journal = "Physica Scripta",
+ volume = "T35",
+ pages = "232--236",
+ URL = "http://stacks.iop.org/1402-4896/T35/232",
+ year = "1991",
+ notes = "superlattices, convert indirect band gap into a
+ quasi-direct one",
+}
+
+@Article{osten99,
+ author = "H. J. Osten and J. Griesche and S. Scalese",
+ collaboration = "",
+ title = "Substitutional carbon incorporation in epitaxial
+ Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
+ molecular beam epitaxy",
+ publisher = "AIP",
+ year = "1999",
+ journal = "Applied Physics Letters",
+ volume = "74",
+ number = "6",
+ pages = "836--838",
+ keywords = "molecular beam epitaxial growth; semiconductor growth;
+ wide band gap semiconductors; interstitials; silicon
+ compounds",
+ URL = "http://link.aip.org/link/?APL/74/836/1",
+ doi = "10.1063/1.123384",
+ notes = "substitutional c in si",
+}
+
+@Article{hohenberg64,
+ title = "Inhomogeneous Electron Gas",
+ author = "P. Hohenberg and W. Kohn",
+ journal = "Phys. Rev.",
+ volume = "136",
+ number = "3B",
+ pages = "B864--B871",
+ numpages = "7",
+ year = "1964",
+ month = nov,
+ doi = "10.1103/PhysRev.136.B864",
+ publisher = "American Physical Society",
+ notes = "density functional theory, dft",
+}
+
+@Article{kohn65,
+ title = "Self-Consistent Equations Including Exchange and
+ Correlation Effects",
+ author = "W. Kohn and L. J. Sham",
+ journal = "Phys. Rev.",
+ volume = "140",
+ number = "4A",
+ pages = "A1133--A1138",
+ numpages = "5",
+ year = "1965",
+ month = nov,
+ doi = "10.1103/PhysRev.140.A1133",
+ publisher = "American Physical Society",
+ notes = "dft, exchange and correlation",
+}
+
+@Article{ruecker94,
+ title = "Strain-stabilized highly concentrated pseudomorphic
+ $Si1-x$$Cx$ layers in Si",
+ author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
+ J. Osten",
+ journal = "Phys. Rev. Lett.",
+ volume = "72",
+ number = "22",
+ pages = "3578--3581",
+ numpages = "3",
+ year = "1994",
+ month = may,
+ doi = "10.1103/PhysRevLett.72.3578",
+ publisher = "American Physical Society",
+ notes = "high c concentration in si, heterostructure, starined
+ si, dft",
+}
+@Article{chang05,
+ title = "Electron Transport Model for Strained Silicon-Carbon
+ Alloy",
+ author = "Shu-Tong Chang and Chung-Yi Lin",
+ journal = "Japanese Journal of Applied Physics",
+ volume = "44",
+ number = "4B",
+ pages = "2257--2262",
+ numpages = "5",
+ year = "2005",
+ URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
+ doi = "10.1143/JJAP.44.2257",
+ publisher = "The Japan Society of Applied Physics",
+ notes = "enhance of electron mobility in starined si",
+}
+
+@Article{osten97,
+ author = "H. J. Osten and P. Gaworzewski",
+ collaboration = "",
+ title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
+ and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
+ Si(001)",
+ publisher = "AIP",
+ year = "1997",
+ journal = "Journal of Applied Physics",
+ volume = "82",
+ number = "10",
+ pages = "4977--4981",
+ keywords = "silicon compounds; Ge-Si alloys; wide band gap
+ semiconductors; semiconductor epitaxial layers; carrier
+ density; Hall mobility; interstitials; defect states",
+ URL = "http://link.aip.org/link/?JAP/82/4977/1",
+ doi = "10.1063/1.366364",
+ notes = "charge transport in strained si",
+}
+
+@Article{kapur04,
+ title = "Carbon-mediated aggregation of self-interstitials in
+ silicon: {A} large-scale molecular dynamics study",
+ author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
+ journal = "Phys. Rev. B",
+ volume = "69",
+ number = "15",
+ pages = "155214",
+ numpages = "8",
+ year = "2004",
+ month = apr,
+ doi = "10.1103/PhysRevB.69.155214",
+ publisher = "American Physical Society",
+ notes = "simulation using promising tersoff reparametrization",
+}
+
+@Article{barkema96,
+ title = "Event-Based Relaxation of Continuous Disordered
+ Systems",
+ author = "G. T. Barkema and Normand Mousseau",
+ journal = "Phys. Rev. Lett.",
+ volume = "77",
+ number = "21",
+ pages = "4358--4361",
+ numpages = "3",
+ year = "1996",
+ month = nov,
+ doi = "10.1103/PhysRevLett.77.4358",
+ publisher = "American Physical Society",
+ notes = "activation relaxation technique, art, speed up slow
+ dynamic mds",
+}
+
+@Article{cances09,
+ author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
+ Minoukadeh and F. Willaime",
+ collaboration = "",
+ title = "Some improvements of the activation-relaxation
+ technique method for finding transition pathways on
+ potential energy surfaces",
+ publisher = "AIP",
+ year = "2009",
+ journal = "The Journal of Chemical Physics",
+ volume = "130",
+ number = "11",
+ eid = "114711",
+ numpages = "6",
+ pages = "114711",
+ keywords = "eigenvalues and eigenfunctions; iron; potential energy
+ surfaces; vacancies (crystal)",
+ URL = "http://link.aip.org/link/?JCP/130/114711/1",
+ doi = "10.1063/1.3088532",
+ notes = "improvements to art, refs for methods to find
+ transition pathways",
+}
+
+@Article{parrinello81,
+ author = "M. Parrinello and A. Rahman",
+ collaboration = "",
+ title = "Polymorphic transitions in single crystals: {A} new
+ molecular dynamics method",
+ publisher = "AIP",
+ year = "1981",
+ journal = "Journal of Applied Physics",
+ volume = "52",
+ number = "12",
+ pages = "7182--7190",
+ keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
+ MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
+ CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
+ COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
+ EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
+ IMPACT SHOCK",
+ URL = "http://link.aip.org/link/?JAP/52/7182/1",
+ doi = "10.1063/1.328693",
+}
+
+@Article{stillinger85,
+ title = "Computer simulation of local order in condensed phases
+ of silicon",
+ author = "Frank H. Stillinger and Thomas A. Weber",
+ journal = "Phys. Rev. B",
+ volume = "31",
+ number = "8",
+ pages = "5262--5271",
+ numpages = "9",
+ year = "1985",
+ month = apr,
+ doi = "10.1103/PhysRevB.31.5262",
+ publisher = "American Physical Society",
+}
+
+@Article{bazant97,
+ title = "Environment-dependent interatomic potential for bulk
+ silicon",
+ author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
+ Justo",
+ journal = "Phys. Rev. B",
+ volume = "56",
+ number = "14",
+ pages = "8542--8552",
+ numpages = "10",
+ year = "1997",
+ month = oct,
+ doi = "10.1103/PhysRevB.56.8542",
+ publisher = "American Physical Society",
+}
+
+@Article{justo98,
+ title = "Interatomic potential for silicon defects and
+ disordered phases",
+ author = "Jo\~ao F. Justo and Martin Z. Bazant and Efthimios
+ Kaxiras and V. V. Bulatov and Sidney Yip",
+ journal = "Phys. Rev. B",
+ volume = "58",
+ number = "5",
+ pages = "2539--2550",
+ numpages = "11",
+ year = "1998",
+ month = aug,
+ doi = "10.1103/PhysRevB.58.2539",
+ publisher = "American Physical Society",
+}
+
+@Article{parcas_md,
+ title = "{PARCAS} molecular dynamics code",
+ author = "K. Nordlund",
+ year = "2008",
+}
+
+@Article{voter97,
+ title = "Hyperdynamics: Accelerated Molecular Dynamics of
+ Infrequent Events",
+ author = "Arthur F. Voter",
+ journal = "Phys. Rev. Lett.",
+ volume = "78",
+ number = "20",
+ pages = "3908--3911",
+ numpages = "3",
+ year = "1997",
+ month = may,
+ doi = "10.1103/PhysRevLett.78.3908",
+ publisher = "American Physical Society",
+ notes = "hyperdynamics, accelerated md",
+}
+
+@Article{voter97_2,
+ author = "Arthur F. Voter",
+ collaboration = "",
+ title = "A method for accelerating the molecular dynamics
+ simulation of infrequent events",
+ publisher = "AIP",
+ year = "1997",
+ journal = "The Journal of Chemical Physics",
+ volume = "106",
+ number = "11",
+ pages = "4665--4677",
+ keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
+ TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
+ SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
+ energy functions; surface diffusion; reaction kinetics
+ theory; potential energy surfaces",
+ URL = "http://link.aip.org/link/?JCP/106/4665/1",
+ doi = "10.1063/1.473503",
+ notes = "improved hyperdynamics md",
+}
+
+@Article{sorensen2000,
+ author = "Mads R. S\o rensen and Arthur F. Voter",
+ collaboration = "",
+ title = "Temperature-accelerated dynamics for simulation of
+ infrequent events",
+ publisher = "AIP",
+ year = "2000",
+ journal = "The Journal of Chemical Physics",
+ volume = "112",
+ number = "21",
+ pages = "9599--9606",
+ keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
+ MOLECULAR DYNAMICS METHOD; surface diffusion",
+ URL = "http://link.aip.org/link/?JCP/112/9599/1",
+ doi = "10.1063/1.481576",
+ notes = "temperature accelerated dynamics, tad",
+}
+
+@Article{voter98,
+ title = "Parallel replica method for dynamics of infrequent
+ events",
+ author = "Arthur F. Voter",
+ journal = "Phys. Rev. B",
+ volume = "57",
+ number = "22",
+ pages = "R13985--R13988",
+ numpages = "3",
+ year = "1998",
+ month = jun,
+ doi = "10.1103/PhysRevB.57.R13985",
+ publisher = "American Physical Society",
+ notes = "parallel replica method, accelerated md",
+}
+
+@Article{wu99,
+ author = "Xiongwu Wu and Shaomeng Wang",
+ collaboration = "",
+ title = "Enhancing systematic motion in molecular dynamics
+ simulation",
+ publisher = "AIP",
+ year = "1999",
+ journal = "The Journal of Chemical Physics",
+ volume = "110",
+ number = "19",
+ pages = "9401--9410",
+ keywords = "molecular dynamics method; argon; Lennard-Jones
+ potential; crystallisation; liquid theory",
+ URL = "http://link.aip.org/link/?JCP/110/9401/1",
+ doi = "10.1063/1.478948",
+ notes = "self guided md, sgmd, accelerated md, enhancing
+ systematic motion",
+}
+
+@Article{choudhary05,
+ author = "Devashish Choudhary and Paulette Clancy",
+ collaboration = "",
+ title = "Application of accelerated molecular dynamics schemes
+ to the production of amorphous silicon",
+ publisher = "AIP",
+ year = "2005",
+ journal = "The Journal of Chemical Physics",
+ volume = "122",
+ number = "15",
+ eid = "154509",
+ numpages = "8",
+ pages = "154509",
+ keywords = "molecular dynamics method; silicon; glass structure;
+ amorphous semiconductors",
+ URL = "http://link.aip.org/link/?JCP/122/154509/1",
+ doi = "10.1063/1.1878733",
+ notes = "explanation of sgmd and hyper md, applied to amorphous
+ silicon",
+}
+
+@Article{taylor93,
+ author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
+ collaboration = "",
+ title = "Carbon precipitation in silicon: Why is it so
+ difficult?",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Applied Physics Letters",
+ volume = "62",
+ number = "25",
+ pages = "3336--3338",
+ keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
+ MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
+ ENERGY",
+ URL = "http://link.aip.org/link/?APL/62/3336/1",
+ doi = "10.1063/1.109063",
+ notes = "interfacial energy of cubic sic and si",
+}
+
+@Article{chaussende08,
+ title = "Prospects for 3{C}-Si{C} bulk crystal growth",
+ journal = "Journal of Crystal Growth",
+ volume = "310",
+ number = "5",
+ pages = "976--981",
+ year = "2008",
+ note = "Proceedings of the E-MRS Conference, Symposium G -
+ Substrates of Wide Bandgap Materials",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
+ author = "D. Chaussende and F. Mercier and A. Boulle and F.
+ Conchon and M. Soueidan and G. Ferro and A. Mantzari
+ and A. Andreadou and E. K. Polychroniadis and C.
+ Balloud and S. Juillaguet and J. Camassel and M. Pons",
+ notes = "3c-sic crystal growth, sic fabrication + links,
+ metastable",
+}
+
+@Article{feynman39,
+ title = "Forces in Molecules",
+ author = "R. P. Feynman",
+ journal = "Phys. Rev.",
+ volume = "56",
+ number = "4",
+ pages = "340--343",
+ numpages = "3",
+ year = "1939",
+ month = aug,
+ doi = "10.1103/PhysRev.56.340",
+ publisher = "American Physical Society",
+ notes = "hellmann feynman forces",
+}
+
+@Article{buczko00,
+ title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
+ $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
+ their Contrasting Properties",
+ author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
+ T. Pantelides",
+ journal = "Phys. Rev. Lett.",
+ volume = "84",
+ number = "5",
+ pages = "943--946",
+ numpages = "3",
+ year = "2000",
+ month = jan,
+ doi = "10.1103/PhysRevLett.84.943",
+ publisher = "American Physical Society",
+ notes = "si sio2 and sic sio2 interface",
+}
+
+@Article{djurabekova08,
+ title = "Atomistic simulation of the interface structure of Si
+ nanocrystals embedded in amorphous silica",
+ author = "Flyura Djurabekova and Kai Nordlund",
+ journal = "Phys. Rev. B",
+ volume = "77",
+ number = "11",
+ pages = "115325",
+ numpages = "7",
+ year = "2008",
+ month = mar,
+ doi = "10.1103/PhysRevB.77.115325",
+ publisher = "American Physical Society",
+ notes = "nc-si in sio2, interface energy, nc construction,
+ angular distribution, coordination",
+}
+
+@Article{wen:073522,
+ author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
+ W. Liang and J. Zou",
+ collaboration = "",
+ title = "Nature of interfacial defects and their roles in
+ strain relaxation at highly lattice mismatched
+ 3{C}-Si{C}/Si (001) interface",
+ publisher = "AIP",
+ year = "2009",
+ journal = "Journal of Applied Physics",
+ volume = "106",
+ number = "7",
+ eid = "073522",
+ numpages = "8",
+ pages = "073522",
+ keywords = "anelastic relaxation; crystal structure; dislocations;
+ elemental semiconductors; semiconductor growth;
+ semiconductor thin films; silicon; silicon compounds;
+ stacking faults; wide band gap semiconductors",
+ URL = "http://link.aip.org/link/?JAP/106/073522/1",
+ doi = "10.1063/1.3234380",
+ notes = "sic/si interface, follow refs",
+}
+
+@Article{kitabatake93,
+ author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
+ Hirao",
+ collaboration = "",
+ title = "Simulations and experiments of Si{C} heteroepitaxial
+ growth on Si(001) surface",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Journal of Applied Physics",
+ volume = "74",
+ number = "7",
+ pages = "4438--4445",
+ keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
+ BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
+ MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
+ URL = "http://link.aip.org/link/?JAP/74/4438/1",
+ doi = "10.1063/1.354385",
+ notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
+ model, interface",
+}
+
+@Article{pizzagalli03,
+ title = "Theoretical investigations of a highly mismatched
+ interface: Si{C}/Si(001)",
+ author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
+ Catellani",
+ journal = "Phys. Rev. B",
+ volume = "68",
+ number = "19",
+ pages = "195302",
+ numpages = "10",
+ year = "2003",
+ month = nov,
+ doi = "10.1103/PhysRevB.68.195302",
+ publisher = "American Physical Society",
+ notes = "tersoff md and ab initio sic/si interface study",
+}
projects / lectures / latex.git / blobdiff