notes = "derivation of albe bond order formalism",
}
+@Article{bean71,
+ author = "A. R. Bean and R. C. Newman",
+ title = "",
+ journal = "J. Phys. Chem. Solids",
+ volume = "32",
+ pages = "1211",
+ year = "1971",
+ notes = "experimental solubility data of carbon in silicon",
+}
+
@Article{capano97,
author = "M. A. Capano and R. J. Trew",
title = "Silicon Carbide Electronic Materials and Devices",
relation (uer), minimum range model (mrm)",
}
+@Article{balamane92,
+ title = "Comparative study of silicon empirical interatomic
+ potentials",
+ author = "H. Balamane and T. Halicioglu and W. A. Tiller",
+ journal = "Phys. Rev. B",
+ volume = "46",
+ number = "4",
+ pages = "2250--2279",
+ numpages = "29",
+ year = "1992",
+ month = jul,
+ doi = "10.1103/PhysRevB.46.2250",
+ publisher = "American Physical Society",
+ notes = "comparison of classical potentials for si",
+}
+
@Article{koster2002,
title = "Stress relaxation in $a-Si$ induced by ion
bombardment",
notes = "si self interstitial, tbmd, virial stress",
}
+@Article{al-mushadani03,
+ title = "Free-energy calculations of intrinsic point defects in
+ silicon",
+ author = "O. K. Al-Mushadani and R. J. Needs",
+ journal = "Phys. Rev. B",
+ volume = "68",
+ number = "23",
+ pages = "235205",
+ numpages = "8",
+ year = "2003",
+ month = dec,
+ doi = "10.1103/PhysRevB.68.235205",
+ publisher = "American Physical Society",
+ notes = "formation energies of intrinisc point defects in
+ silicon, si self interstitials",
+}
+
+@Article{ma10,
+ title = "Ab initio study of self-diffusion in silicon over a
+ wide temperature range: Point defect states and
+ migration mechanisms",
+ author = "Shangyi Ma and Shaoqing Wang",
+ journal = "Phys. Rev. B",
+ volume = "81",
+ number = "19",
+ pages = "193203",
+ numpages = "4",
+ year = "2010",
+ month = may,
+ doi = "10.1103/PhysRevB.81.193203",
+ publisher = "American Physical Society",
+ notes = "si self interstitial diffusion + refs",
+}
+
@Article{gao2001,
title = "Ab initio and empirical-potential studies of defect
properties in $3{C}-Si{C}$",
doi = "10.1103/PhysRevB.66.195214",
publisher = "American Physical Society",
notes = "c in c-si, diffusion, interstitial configuration +
- links",
+ links, interaction of carbon and silicon
+ interstitials",
}
@Article{leung99,
month = sep,
doi = "10.1103/PhysRevLett.83.2351",
publisher = "American Physical Society",
- notes = "nice images of the defects, si defect overview + refs",
+ notes = "nice images of the defects, si defect overview +
+ refs",
}
@Article{capaz94,
}
@Article{dal_pino93,
- title = {Ab initio investigation of carbon-related defects in silicon},
- author = {Dal Pino, A. and Rappe, Andrew M. and Joannopoulos, J. D.},
- journal = {Phys. Rev. B},
- volume = {47},
- number = {19},
- pages = {12554--12557},
- numpages = {3},
- year = {1993},
- month = {May},
- doi = {10.1103/PhysRevB.47.12554},
- publisher = {American Physical Society},
- notes = {c interstitials in crystalline silicon}
+ title = "Ab initio investigation of carbon-related defects in
+ silicon",
+ author = "A. Dal Pino and Andrew M. Rappe and J. D.
+ Joannopoulos",
+ journal = "Phys. Rev. B",
+ volume = "47",
+ number = "19",
+ pages = "12554--12557",
+ numpages = "3",
+ year = "1993",
+ month = may,
+ doi = "10.1103/PhysRevB.47.12554",
+ publisher = "American Physical Society",
+ notes = "c interstitials in crystalline silicon",
}
@Article{car84,
notes = "mc md, strain compensation in si ge by c insertion",
}
+@Article{bean70,
+ title = "Low temperature electron irradiation of silicon
+ containing carbon",
+ journal = "Solid State Communications",
+ volume = "8",
+ number = "3",
+ pages = "175--177",
+ year = "1970",
+ note = "",
+ ISSN = "0038-1098",
+ doi = "DOI: 10.1016/0038-1098(70)90074-8",
+ URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
+ author = "A. R. Bean and R. C. Newman",
+}
+
@Article{watkins76,
title = "{EPR} Observation of the Isolated Interstitial Carbon
Atom in Silicon",
month = sep,
doi = "10.1103/PhysRevB.42.5759",
publisher = "American Physical Society",
+ notes = "carbon diffusion in silicon",
+}
+
+@Article{tipping87,
+ author = "A K Tipping and R C Newman",
+ title = "The diffusion coefficient of interstitial carbon in
+ silicon",
+ journal = "Semiconductor Science and Technology",
+ volume = "2",
+ number = "5",
+ pages = "315--317",
+ URL = "http://stacks.iop.org/0268-1242/2/315",
+ year = "1987",
+ notes = "diffusion coefficient of carbon interstitials in
+ silicon",
}
@Article{strane96,
}
@Article{tersoff90,
- title = {Carbon defects and defect reactions in silicon},
- author = {Tersoff, J. },
- journal = {Phys. Rev. Lett.},
- volume = {64},
- number = {15},
- pages = {1757--1760},
- numpages = {3},
- year = {1990},
- month = {Apr},
- doi = {10.1103/PhysRevLett.64.1757},
- publisher = {American Physical Society}
+ title = "Carbon defects and defect reactions in silicon",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. Lett.",
+ volume = "64",
+ number = "15",
+ pages = "1757--1760",
+ numpages = "3",
+ year = "1990",
+ month = apr,
+ doi = "10.1103/PhysRevLett.64.1757",
+ publisher = "American Physical Society",
}
@Article{fahey89,
pages = "15150--15159",
numpages = "9",
year = "1995",
- month = dec,
doi = "10.1103/PhysRevB.52.15150",
- notes = "modified tersoff, scale cutoff with volume",
+ notes = "modified tersoff, scale cutoff with volume, promising
+ tersoff reparametrization",
publisher = "American Physical Society",
}
author = "Yu. M. Tairov and V. F. Tsvetkov",
}
+@Article{nishino83,
+ author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
+ Will",
+ collaboration = "",
+ title = "Production of large-area single-crystal wafers of
+ cubic Si{C} for semiconductor devices",
+ publisher = "AIP",
+ year = "1983",
+ journal = "Applied Physics Letters",
+ volume = "42",
+ number = "5",
+ pages = "460--462",
+ keywords = "silicon carbides; layers; chemical vapor deposition;
+ monocrystals",
+ URL = "http://link.aip.org/link/?APL/42/460/1",
+ doi = "10.1063/1.93970",
+ notes = "cvd of 3c-sic on si, sic buffer layer",
+}
+
+@Article{nishino:4889,
+ author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
+ and Hiroyuki Matsunami",
+ collaboration = "",
+ title = "Epitaxial growth and electric characteristics of cubic
+ Si{C} on silicon",
+ publisher = "AIP",
+ year = "1987",
+ journal = "Journal of Applied Physics",
+ volume = "61",
+ number = "10",
+ pages = "4889--4893",
+ URL = "http://link.aip.org/link/?JAP/61/4889/1",
+ doi = "10.1063/1.338355",
+ notes = "cvd of 3c-sic on si, sic buffer layer, first time
+ carbonization",
+}
+
@Article{powell87,
author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
Kuczmarski",
VAPOR DEPOSITION",
URL = "http://link.aip.org/link/?JAP/73/726/1",
doi = "10.1063/1.353329",
+ notes = "cvd of 6h-sic on 6h-sic, twinned 3c-sic",
}
@Article{powell90,
PHASE EPITAXY",
URL = "http://link.aip.org/link/?APL/56/1353/1",
doi = "10.1063/1.102512",
+ notes = "cvd of 3c-sic on 6h-sic",
+}
+
+@Article{yuan95,
+ author = "C. Yuan and A. J. Steckl and J. Chaudhuri and R.
+ Thokala and M. J. Loboda",
+ collaboration = "",
+ title = "Reduced temperature growth of crystalline 3{C}-Si{C}
+ films on 6{H}-Si{C} by chemical vapor deposition from
+ silacyclobutane",
+ publisher = "AIP",
+ year = "1995",
+ journal = "Journal of Applied Physics",
+ volume = "78",
+ number = "2",
+ pages = "1271--1273",
+ keywords = "SILICON CARBIDES; THIN FILMS; CVD; EPITAXY; ABSORPTION
+ EDGE; CRYSTAL STRUCTURE; STRAINS; DISLOCATIONS; XRD;
+ SPECTROPHOTOMETRY",
+ URL = "http://link.aip.org/link/?JAP/78/1271/1",
+ doi = "10.1063/1.360368",
+ notes = "3c-sic on 6h-sic, cvd, reduced temperature",
}
@Article{fissel95,
and J. M. Poate",
}
+@Article{stolk97,
+ author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
+ D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
+ M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
+ E. Haynes",
+ collaboration = "",
+ title = "Physical mechanisms of transient enhanced dopant
+ diffusion in ion-implanted silicon",
+ publisher = "AIP",
+ year = "1997",
+ journal = "Journal of Applied Physics",
+ volume = "81",
+ number = "9",
+ pages = "6031--6050",
+ URL = "http://link.aip.org/link/?JAP/81/6031/1",
+ doi = "10.1063/1.364452",
+ notes = "ted, transient enhanced diffusion, c silicon trap",
+}
+
@Article{powell94,
author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
collaboration = "",
notes = "charge transport in strained si",
}
-@Article{PhysRevB.69.155214,
+@Article{kapur04,
title = "Carbon-mediated aggregation of self-interstitials in
silicon: {A} large-scale molecular dynamics study",
author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
notes = "simulation using promising tersoff reparametrization",
}
-@Article{PhysRevB.52.15150,
- title = "Atomistic simulation of thermomechanical properties of
- \beta{}-Si{C}",
- author = "Meijie Tang and Sidney Yip",
- journal = "Phys. Rev. B",
- volume = "52",
+@Article{barkema96,
+ title = "Event-Based Relaxation of Continuous Disordered
+ Systems",
+ author = "G. T. Barkema and Normand Mousseau",
+ journal = "Phys. Rev. Lett.",
+ volume = "77",
number = "21",
- pages = "15150--15159",
+ pages = "4358--4361",
+ numpages = "3",
+ year = "1996",
+ month = nov,
+ doi = "10.1103/PhysRevLett.77.4358",
+ publisher = "American Physical Society",
+ notes = "activation relaxation technique, art, speed up slow
+ dynamic mds",
+}
+
+@Article{cances09,
+ author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
+ Minoukadeh and F. Willaime",
+ collaboration = "",
+ title = "Some improvements of the activation-relaxation
+ technique method for finding transition pathways on
+ potential energy surfaces",
+ publisher = "AIP",
+ year = "2009",
+ journal = "The Journal of Chemical Physics",
+ volume = "130",
+ number = "11",
+ eid = "114711",
+ numpages = "6",
+ pages = "114711",
+ keywords = "eigenvalues and eigenfunctions; iron; potential energy
+ surfaces; vacancies (crystal)",
+ URL = "http://link.aip.org/link/?JCP/130/114711/1",
+ doi = "10.1063/1.3088532",
+ notes = "improvements to art, refs for methods to find
+ transition pathways",
+}
+
+@Article{parrinello81,
+ author = "M. Parrinello and A. Rahman",
+ collaboration = "",
+ title = "Polymorphic transitions in single crystals: {A} new
+ molecular dynamics method",
+ publisher = "AIP",
+ year = "1981",
+ journal = "Journal of Applied Physics",
+ volume = "52",
+ number = "12",
+ pages = "7182--7190",
+ keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
+ MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
+ CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
+ COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
+ EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
+ IMPACT SHOCK",
+ URL = "http://link.aip.org/link/?JAP/52/7182/1",
+ doi = "10.1063/1.328693",
+}
+
+@Article{stillinger85,
+ title = "Computer simulation of local order in condensed phases
+ of silicon",
+ author = "Frank H. Stillinger and Thomas A. Weber",
+ journal = "Phys. Rev. B",
+ volume = "31",
+ number = "8",
+ pages = "5262--5271",
numpages = "9",
- year = "1995",
- month = dec,
- doi = "10.1103/PhysRevB.52.15150",
+ year = "1985",
+ month = apr,
+ doi = "10.1103/PhysRevB.31.5262",
+ publisher = "American Physical Society",
+}
+
+@Article{bazant97,
+ title = "Environment-dependent interatomic potential for bulk
+ silicon",
+ author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
+ Justo",
+ journal = "Phys. Rev. B",
+ volume = "56",
+ number = "14",
+ pages = "8542--8552",
+ numpages = "10",
+ year = "1997",
+ month = oct,
+ doi = "10.1103/PhysRevB.56.8542",
+ publisher = "American Physical Society",
+}
+
+@Article{justo98,
+ title = "Interatomic potential for silicon defects and
+ disordered phases",
+ author = "Jo\~ao F. Justo and Martin Z. Bazant and Efthimios
+ Kaxiras and V. V. Bulatov and Sidney Yip",
+ journal = "Phys. Rev. B",
+ volume = "58",
+ number = "5",
+ pages = "2539--2550",
+ numpages = "11",
+ year = "1998",
+ month = aug,
+ doi = "10.1103/PhysRevB.58.2539",
+ publisher = "American Physical Society",
+}
+
+@Article{parcas_md,
+ title = "{PARCAS} molecular dynamics code",
+ author = "K. Nordlund",
+ year = "2008",
+}
+
+@Article{voter97,
+ title = "Hyperdynamics: Accelerated Molecular Dynamics of
+ Infrequent Events",
+ author = "Arthur F. Voter",
+ journal = "Phys. Rev. Lett.",
+ volume = "78",
+ number = "20",
+ pages = "3908--3911",
+ numpages = "3",
+ year = "1997",
+ month = may,
+ doi = "10.1103/PhysRevLett.78.3908",
+ publisher = "American Physical Society",
+ notes = "hyperdynamics, accelerated md",
+}
+
+@Article{voter97_2,
+ author = "Arthur F. Voter",
+ collaboration = "",
+ title = "A method for accelerating the molecular dynamics
+ simulation of infrequent events",
+ publisher = "AIP",
+ year = "1997",
+ journal = "The Journal of Chemical Physics",
+ volume = "106",
+ number = "11",
+ pages = "4665--4677",
+ keywords = "COMPUTERIZED SIMULATION; NICKEL; DIFFUSION; ATOM
+ TRANSPORT; MOLECULAR ORBITAL METHOD; POTENTIAL ENERGY;
+ SURFACE POTENTIAL; MOLECULAR DYNAMICS METHOD; potential
+ energy functions; surface diffusion; reaction kinetics
+ theory; potential energy surfaces",
+ URL = "http://link.aip.org/link/?JCP/106/4665/1",
+ doi = "10.1063/1.473503",
+ notes = "improved hyperdynamics md",
+}
+
+@Article{sorensen2000,
+ author = "Mads R. S\o rensen and Arthur F. Voter",
+ collaboration = "",
+ title = "Temperature-accelerated dynamics for simulation of
+ infrequent events",
+ publisher = "AIP",
+ year = "2000",
+ journal = "The Journal of Chemical Physics",
+ volume = "112",
+ number = "21",
+ pages = "9599--9606",
+ keywords = "SOLID STATE PHYSICS; SIMULATION; DIFFUSION; SURFACES;
+ MOLECULAR DYNAMICS METHOD; surface diffusion",
+ URL = "http://link.aip.org/link/?JCP/112/9599/1",
+ doi = "10.1063/1.481576",
+ notes = "temperature accelerated dynamics, tad",
+}
+
+@Article{voter98,
+ title = "Parallel replica method for dynamics of infrequent
+ events",
+ author = "Arthur F. Voter",
+ journal = "Phys. Rev. B",
+ volume = "57",
+ number = "22",
+ pages = "R13985--R13988",
+ numpages = "3",
+ year = "1998",
+ month = jun,
+ doi = "10.1103/PhysRevB.57.R13985",
+ publisher = "American Physical Society",
+ notes = "parallel replica method, accelerated md",
+}
+
+@Article{wu99,
+ author = "Xiongwu Wu and Shaomeng Wang",
+ collaboration = "",
+ title = "Enhancing systematic motion in molecular dynamics
+ simulation",
+ publisher = "AIP",
+ year = "1999",
+ journal = "The Journal of Chemical Physics",
+ volume = "110",
+ number = "19",
+ pages = "9401--9410",
+ keywords = "molecular dynamics method; argon; Lennard-Jones
+ potential; crystallisation; liquid theory",
+ URL = "http://link.aip.org/link/?JCP/110/9401/1",
+ doi = "10.1063/1.478948",
+ notes = "self guided md, sgmd, accelerated md, enhancing
+ systematic motion",
+}
+
+@Article{choudhary05,
+ author = "Devashish Choudhary and Paulette Clancy",
+ collaboration = "",
+ title = "Application of accelerated molecular dynamics schemes
+ to the production of amorphous silicon",
+ publisher = "AIP",
+ year = "2005",
+ journal = "The Journal of Chemical Physics",
+ volume = "122",
+ number = "15",
+ eid = "154509",
+ numpages = "8",
+ pages = "154509",
+ keywords = "molecular dynamics method; silicon; glass structure;
+ amorphous semiconductors",
+ URL = "http://link.aip.org/link/?JCP/122/154509/1",
+ doi = "10.1063/1.1878733",
+ notes = "explanation of sgmd and hyper md, applied to amorphous
+ silicon",
+}
+
+@Article{taylor93,
+ author = "W. J. Taylor and T. Y. Tan and U. G{\"{o}}sele",
+ collaboration = "",
+ title = "Carbon precipitation in silicon: Why is it so
+ difficult?",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Applied Physics Letters",
+ volume = "62",
+ number = "25",
+ pages = "3336--3338",
+ keywords = "SILICON; CARBON ADDITIONS; OXYGEN ADDITIONS; DOPED
+ MATERIALS; PRECIPITATION; THERMODYNAMICS; SURFACE
+ ENERGY",
+ URL = "http://link.aip.org/link/?APL/62/3336/1",
+ doi = "10.1063/1.109063",
+ notes = "interfacial energy of cubic sic and si",
+}
+
+@Article{chaussende08,
+ title = "Prospects for 3{C}-Si{C} bulk crystal growth",
+ journal = "Journal of Crystal Growth",
+ volume = "310",
+ number = "5",
+ pages = "976--981",
+ year = "2008",
+ note = "Proceedings of the E-MRS Conference, Symposium G -
+ Substrates of Wide Bandgap Materials",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/j.jcrysgro.2007.11.140",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-4R7J67S-F/2/e92fc194b652409f5b119393d608b082",
+ author = "D. Chaussende and F. Mercier and A. Boulle and F.
+ Conchon and M. Soueidan and G. Ferro and A. Mantzari
+ and A. Andreadou and E. K. Polychroniadis and C.
+ Balloud and S. Juillaguet and J. Camassel and M. Pons",
+ notes = "3c-sic crystal growth, sic fabrication + links,
+ metastable",
+}
+
+@Article{feynman39,
+ title = "Forces in Molecules",
+ author = "R. P. Feynman",
+ journal = "Phys. Rev.",
+ volume = "56",
+ number = "4",
+ pages = "340--343",
+ numpages = "3",
+ year = "1939",
+ month = aug,
+ doi = "10.1103/PhysRev.56.340",
+ publisher = "American Physical Society",
+ notes = "hellmann feynman forces",
+}
+
+@Article{buczko00,
+ title = "Bonding Arrangements at the $Si-Si{O}_{2}$ and
+ $Si{C}-Si{O}_{2}$ Interfaces and a Possible Origin of
+ their Contrasting Properties",
+ author = "Ryszard Buczko and Stephen J. Pennycook and Sokrates
+ T. Pantelides",
+ journal = "Phys. Rev. Lett.",
+ volume = "84",
+ number = "5",
+ pages = "943--946",
+ numpages = "3",
+ year = "2000",
+ month = jan,
+ doi = "10.1103/PhysRevLett.84.943",
+ publisher = "American Physical Society",
+ notes = "si sio2 and sic sio2 interface",
+}
+
+@Article{djurabekova08,
+ title = "Atomistic simulation of the interface structure of Si
+ nanocrystals embedded in amorphous silica",
+ author = "Flyura Djurabekova and Kai Nordlund",
+ journal = "Phys. Rev. B",
+ volume = "77",
+ number = "11",
+ pages = "115325",
+ numpages = "7",
+ year = "2008",
+ month = mar,
+ doi = "10.1103/PhysRevB.77.115325",
+ publisher = "American Physical Society",
+ notes = "nc-si in sio2, interface energy, nc construction,
+ angular distribution, coordination",
+}
+
+@Article{wen:073522,
+ author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
+ W. Liang and J. Zou",
+ collaboration = "",
+ title = "Nature of interfacial defects and their roles in
+ strain relaxation at highly lattice mismatched
+ 3{C}-Si{C}/Si (001) interface",
+ publisher = "AIP",
+ year = "2009",
+ journal = "Journal of Applied Physics",
+ volume = "106",
+ number = "7",
+ eid = "073522",
+ numpages = "8",
+ pages = "073522",
+ keywords = "anelastic relaxation; crystal structure; dislocations;
+ elemental semiconductors; semiconductor growth;
+ semiconductor thin films; silicon; silicon compounds;
+ stacking faults; wide band gap semiconductors",
+ URL = "http://link.aip.org/link/?JAP/106/073522/1",
+ doi = "10.1063/1.3234380",
+ notes = "sic/si interface, follow refs",
+}
+
+@Article{kitabatake93,
+ author = "Makoto Kitabatake and Masahiro Deguchi and Takashi
+ Hirao",
+ collaboration = "",
+ title = "Simulations and experiments of Si{C} heteroepitaxial
+ growth on Si(001) surface",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Journal of Applied Physics",
+ volume = "74",
+ number = "7",
+ pages = "4438--4445",
+ keywords = "SILICON CARBIDES; FILM GROWTH; SIMULATION; MOLECULAR
+ BEAM EPITAXY; MOLECULAR DYNAMICS CALCULATIONS; SILICON;
+ MICROSTRUCTURE; ULTRAVIOLET RADIATION; IRRADIATION",
+ URL = "http://link.aip.org/link/?JAP/74/4438/1",
+ doi = "10.1063/1.354385",
+ notes = "mbe and md of sic growth on si, 4 to 5 shrinkage
+ model, interface",
+}
+
+@Article{pizzagalli03,
+ title = "Theoretical investigations of a highly mismatched
+ interface: Si{C}/Si(001)",
+ author = "Laurent Pizzagalli and Giancarlo Cicero and Alessandra
+ Catellani",
+ journal = "Phys. Rev. B",
+ volume = "68",
+ number = "19",
+ pages = "195302",
+ numpages = "10",
+ year = "2003",
+ month = nov,
+ doi = "10.1103/PhysRevB.68.195302",
publisher = "American Physical Society",
- notes = "promising tersoff reparametrization",
+ notes = "tersoff md and ab initio sic/si interface study",
}
projects / lectures / latex.git / blobdiff