carbon, both mechanisms explained + refs",
}
+@Article{skorupa96,
+ title = "Carbon-mediated effects in silicon and in
+ silicon-related materials",
+ journal = "Materials Chemistry and Physics",
+ volume = "44",
+ number = "2",
+ pages = "101--143",
+ year = "1996",
+ note = "",
+ ISSN = "0254-0584",
+ doi = "DOI: 10.1016/0254-0584(95)01673-I",
+ URL = "http://www.sciencedirect.com/science/article/B6TX4-3VR9V74-2/2/4ab972315eb79eaa76b55ffab5aed982",
+ author = "W. Skorupa and R. A. Yankov",
+ notes = "review of silicon carbon compound",
+}
+
@Book{laplace,
author = "P. S. de Laplace",
title = "Th\'eorie analytique des probabilit\'es",
URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
and S. Nishio and K. Yasuda and Y. Ishigami",
+ notes = "gan on 3c-sic, focus on ibs of 3c-sic",
+}
+
+@Article{yamamoto04,
+ title = "Organometallic vapor phase epitaxial growth of Ga{N}
+ on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
+ implantation into Si(1 1 1) substrate",
+ journal = "Journal of Crystal Growth",
+ volume = "261",
+ number = "2-3",
+ pages = "266--270",
+ year = "2004",
+ note = "Proceedings of the 11th Biennial (US) Workshop on
+ Organometallic Vapor Phase Epitaxy (OMVPE)",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
+ author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
+ Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
notes = "gan on 3c-sic",
}
+@Article{liu_l02,
+ title = "Substrates for gallium nitride epitaxy",
+ journal = "Materials Science and Engineering: R: Reports",
+ volume = "37",
+ number = "3",
+ pages = "61--127",
+ year = "2002",
+ note = "",
+ ISSN = "0927-796X",
+ doi = "DOI: 10.1016/S0927-796X(02)00008-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
+ author = "L. Liu and J. H. Edgar",
+ notes = "gan substrates",
+}
+
+@Article{takeuchi91,
+ title = "Growth of single crystalline Ga{N} film on Si
+ substrate using 3{C}-Si{C} as an intermediate layer",
+ journal = "Journal of Crystal Growth",
+ volume = "115",
+ number = "1-4",
+ pages = "634--638",
+ year = "1991",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(91)90817-O",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
+ author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
+ Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
+ notes = "gan on 3c-sic (first time?)",
+}
+
@Article{alder57,
author = "B. J. Alder and T. E. Wainwright",
title = "Phase Transition for a Hard Sphere System",
notes = "sic intro, properties",
}
-@Article{neudeck95,
- author = "P. G. Neudeck",
- title = "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR}
- {ELECTRONICS} {TECHNOLOGY}",
- journal = "Journal of Electronic Materials",
- year = "1995",
- volume = "24",
- number = "4",
- pages = "283--288",
- month = apr,
-}
-
@Article{foo,
author = "Noch Unbekannt",
title = "How to find references",
author = "Yu. M. Tairov and V. F. Tsvetkov",
}
+@Article{tairov81,
+ title = "General principles of growing large-size single
+ crystals of various silicon carbide polytypes",
+ journal = "Journal of Crystal Growth",
+ volume = "52",
+ number = "Part 1",
+ pages = "146--150",
+ year = "1981",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(81)90184-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FVMF6-2Y/2/b7c4025f0ef07ceec37fbd596819d529",
+ author = "Yu.M. Tairov and V. F. Tsvetkov",
+}
+
+@Article{barrett91,
+ title = "Si{C} boule growth by sublimation vapor transport",
+ journal = "Journal of Crystal Growth",
+ volume = "109",
+ number = "1-4",
+ pages = "17--23",
+ year = "1991",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(91)90152-U",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ4VX-KF/2/fb802a6d67a8074a672007e972b264e1",
+ author = "D. L. Barrett and R. G. Seidensticker and W. Gaida and
+ R. H. Hopkins and W. J. Choyke",
+}
+
+@Article{barrett93,
+ title = "Growth of large Si{C} single crystals",
+ journal = "Journal of Crystal Growth",
+ volume = "128",
+ number = "1-4",
+ pages = "358--362",
+ year = "1993",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(93)90348-Z",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46YKSGB-4D/2/bc26617f48735a9ffbf5c61a5e164d9c",
+ author = "D. L. Barrett and J. P. McHugh and H. M. Hobgood and
+ R. H. Hopkins and P. G. McMullin and R. C. Clarke and
+ W. J. Choyke",
+}
+
+@Article{stein93,
+ title = "Control of polytype formation by surface energy
+ effects during the growth of Si{C} monocrystals by the
+ sublimation method",
+ journal = "Journal of Crystal Growth",
+ volume = "131",
+ number = "1-2",
+ pages = "71--74",
+ year = "1993",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(93)90397-F",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FX1XJ-1X/2/493b180c29103dba5dba351e0fae5b9d",
+ author = "R. A. Stein and P. Lanig",
+ notes = "6h and 4h, sublimation technique",
+}
+
@Article{nishino83,
author = "Shigehiro Nishino and J. Anthony Powell and Herbert A.
Will",
metastable",
}
+@Article{chaussende07,
+ author = "D. Chaussende and P. J. Wellmann and M. Pons",
+ title = "Status of Si{C} bulk growth processes",
+ journal = "Journal of Physics D: Applied Physics",
+ volume = "40",
+ number = "20",
+ pages = "6150",
+ URL = "http://stacks.iop.org/0022-3727/40/i=20/a=S02",
+ year = "2007",
+ notes = "review of sic single crystal growth methods, process
+ modelling",
+}
+
@Article{feynman39,
title = "Forces in Molecules",
author = "R. P. Feynman",
doi = "DOI: 10.1016/S0168-583X(00)00542-5",
URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
author = "W. J. Weber and W. Jiang and S. Thevuthasan",
- keywords = "Amorphization",
- keywords = "Irradiation effects",
- keywords = "Thermal recovery",
- keywords = "Silicon carbide",
}
@Article{bockstedte03,
doi = "10.1103/PhysRevB.68.155208",
publisher = "American Physical Society",
}
+
+@Article{losev27,
+ journal = "Telegrafiya i Telefoniya bez Provodov",
+ volume = "44",
+ pages = "485--494",
+ year = "1927",
+ author = "O. V. Lossev",
+}
+
+@Article{losev28,
+ title = "Luminous carborundum detector and detection effect and
+ oscillations with crystals",
+ journal = "Philosophical Magazine Series 7",
+ volume = "6",
+ number = "39",
+ pages = "1024--1044",
+ year = "1928",
+ URL = "http://www.informaworld.com/10.1080/14786441108564683",
+ author = "O. V. Lossev",
+}
+
+@Article{losev29,
+ journal = "Physik. Zeitschr.",
+ volume = "30",
+ pages = "920--923",
+ year = "1929",
+ author = "O. V. Lossev",
+}
+
+@Article{losev31,
+ journal = "Physik. Zeitschr.",
+ volume = "32",
+ pages = "692--696",
+ year = "1931",
+ author = "O. V. Lossev",
+}
+
+@Article{losev33,
+ journal = "Physik. Zeitschr.",
+ volume = "34",
+ pages = "397--403",
+ year = "1933",
+ author = "O. V. Lossev",
+}
+
+@Article{round07,
+ title = "A note on carborundum",
+ journal = "Electrical World",
+ volume = "49",
+ pages = "308",
+ year = "1907",
+ author = "H. J. Round",
+}
+
+@Article{vashishath08,
+ title = "Recent trends in silicon carbide device research",
+ journal = "Mj. Int. J. Sci. Tech.",
+ volume = "2",
+ number = "03",
+ pages = "444--470",
+ year = "2008",
+ author = "Munish Vashishath and Ashoke K. Chatterjee",
+ URL = "http://www.doaj.org/doaj?func=abstract&id=286746",
+ notes = "sic polytype electronic properties",
+}
+
+@Article{nelson69,
+ author = "W. E. Nelson and F. A. Halden and A. Rosengreen",
+ collaboration = "",
+ title = "Growth and Properties of beta-Si{C} Single Crystals",
+ publisher = "AIP",
+ year = "1966",
+ journal = "Journal of Applied Physics",
+ volume = "37",
+ number = "1",
+ pages = "333--336",
+ URL = "http://link.aip.org/link/?JAP/37/333/1",
+ doi = "10.1063/1.1707837",
+ notes = "sic melt growth",
+}
+
+@Article{arkel25,
+ author = "A. E. van Arkel and J. H. de Boer",
+ title = "Darstellung von reinem Titanium-, Zirkonium-, Hafnium-
+ und Thoriummetall",
+ publisher = "WILEY-VCH Verlag GmbH",
+ year = "1925",
+ journal = "Z. Anorg. Chem.",
+ volume = "148",
+ pages = "345--350",
+ URL = "http://dx.doi.org/10.1002/zaac.19251480133",
+ doi = "10.1002/zaac.19251480133",
+ notes = "van arkel apparatus",
+}
+
+@Article{moers31,
+ author = "K. Moers",
+ year = "1931",
+ journal = "Z. Anorg. Chem.",
+ volume = "198",
+ pages = "293",
+ notes = "sic by van arkel apparatus, pyrolitical vapor growth
+ process",
+}
+
+@Article{kendall53,
+ author = "J. T. Kendall",
+ title = "Electronic Conduction in Silicon Carbide",
+ publisher = "AIP",
+ year = "1953",
+ journal = "The Journal of Chemical Physics",
+ volume = "21",
+ number = "5",
+ pages = "821--827",
+ URL = "http://link.aip.org/link/?JCP/21/821/1",
+ notes = "sic by van arkel apparatus, pyrolitical vapor growth
+ process",
+}
+
+@Article{lely55,
+ author = "J. A. Lely",
+ year = "1955",
+ journal = "Ber. Deut. Keram. Ges.",
+ volume = "32",
+ pages = "229",
+ notes = "lely sublimation growth process",
+}
+
+@Article{knippenberg63,
+ author = "W. F. Knippenberg",
+ year = "1963",
+ journal = "Philips Res. Repts.",
+ volume = "18",
+ pages = "161",
+ notes = "acheson process",
+}
+
+@Article{hoffmann82,
+ author = "L. Hoffmann and G. Ziegler and D. Theis and C.
+ Weyrich",
+ collaboration = "",
+ title = "Silicon carbide blue light emitting diodes with
+ improved external quantum efficiency",
+ publisher = "AIP",
+ year = "1982",
+ journal = "Journal of Applied Physics",
+ volume = "53",
+ number = "10",
+ pages = "6962--6967",
+ keywords = "light emitting diodes; silicon carbides; quantum
+ efficiency; visible radiation; experimental data;
+ epitaxy; fabrication; medium temperature; layers;
+ aluminium; nitrogen; substrates; pn junctions;
+ electroluminescence; spectra; current density;
+ optimization",
+ URL = "http://link.aip.org/link/?JAP/53/6962/1",
+ doi = "10.1063/1.330041",
+ notes = "blue led, sublimation process",
+}
+
+@Article{neudeck95,
+ author = "Philip Neudeck",
+ affiliation = "NASA Lewis Research Center M.S. 77-1, 21000 Brookpark
+ Road 44135 Cleveland OH",
+ title = "Progress in silicon carbide semiconductor electronics
+ technology",
+ journal = "Journal of Electronic Materials",
+ publisher = "Springer Boston",
+ ISSN = "0361-5235",
+ keyword = "Chemistry and Materials Science",
+ pages = "283--288",
+ volume = "24",
+ issue = "4",
+ URL = "http://dx.doi.org/10.1007/BF02659688",
+ note = "10.1007/BF02659688",
+ year = "1995",
+ notes = "sic data, advantages of 3c sic",
+}
+
+@Article{bhatnagar93,
+ author = "M. Bhatnagar and B. J. Baliga",
+ journal = "Electron Devices, IEEE Transactions on",
+ title = "Comparison of 6{H}-Si{C}, 3{C}-Si{C}, and Si for power
+ devices",
+ year = "1993",
+ month = mar,
+ volume = "40",
+ number = "3",
+ pages = "645--655",
+ keywords = "3C-SiC;50 to 5000 V;6H-SiC;Schottky
+ rectifiers;Si;SiC;breakdown voltages;drift region
+ properties;output characteristics;power MOSFETs;power
+ semiconductor devices;switching characteristics;thermal
+ analysis;Schottky-barrier diodes;electric breakdown of
+ solids;insulated gate field effect transistors;power
+ transistors;semiconductor materials;silicon;silicon
+ compounds;solid-state rectifiers;thermal analysis;",
+ doi = "10.1109/16.199372",
+ ISSN = "0018-9383",
+ notes = "comparison 3c 6h sic and si devices",
+}
+
+@Article{neudeck94,
+ author = "P. G. Neudeck and D. J. Larkin and J. E. Starr and J.
+ A. Powell and C. S. Salupo and L. G. Matus",
+ journal = "Electron Devices, IEEE Transactions on",
+ title = "Electrical properties of epitaxial 3{C}- and
+ 6{H}-Si{C} p-n junction diodes produced side-by-side on
+ 6{H}-Si{C} substrates",
+ year = "1994",
+ month = may,
+ volume = "41",
+ number = "5",
+ pages = "826--835",
+ keywords = "20 nA;200 micron;300 to 1100 V;3C-SiC layers;400
+ C;6H-SiC layers;6H-SiC substrates;CVD
+ process;SiC;chemical vapor deposition;doping;electrical
+ properties;epitaxial layers;light
+ emission;low-tilt-angle 6H-SiC substrates;p-n junction
+ diodes;polytype;rectification characteristics;reverse
+ leakage current;reverse voltages;temperature;leakage
+ currents;power electronics;semiconductor
+ diodes;semiconductor epitaxial layers;semiconductor
+ growth;semiconductor materials;silicon
+ compounds;solid-state rectifiers;substrates;vapour
+ phase epitaxial growth;",
+ doi = "10.1109/16.285038",
+ ISSN = "0018-9383",
+ notes = "comparison 6h 3c sic, cvd of 3c and 6h on single 6h
+ substrate",
+}
+
+@Article{schulze98,
+ author = "N. Schulze and D. L. Barrett and G. Pensl",
+ collaboration = "",
+ title = "Near-equilibrium growth of micropipe-free 6{H}-Si{C}
+ single crystals by physical vapor transport",
+ publisher = "AIP",
+ year = "1998",
+ journal = "Applied Physics Letters",
+ volume = "72",
+ number = "13",
+ pages = "1632--1634",
+ keywords = "silicon compounds; semiconductor materials;
+ semiconductor growth; crystal growth from vapour;
+ photoluminescence; Hall mobility",
+ URL = "http://link.aip.org/link/?APL/72/1632/1",
+ doi = "10.1063/1.121136",
+ notes = "micropipe free 6h-sic pvt growth",
+}
projects / lectures / latex.git / blobdiff