}
@Article{bean71,
- author = "A. R. Bean and R. C. Newman",
- title = "",
- journal = "J. Phys. Chem. Solids",
+ title = "The solubility of carbon in pulled silicon crystals",
+ journal = "Journal of Physics and Chemistry of Solids",
volume = "32",
- pages = "1211",
+ number = "6",
+ pages = "1211--1219",
year = "1971",
+ note = "",
+ ISSN = "0022-3697",
+ doi = "DOI: 10.1016/S0022-3697(71)80179-8",
+ URL = "http://www.sciencedirect.com/science/article/B6TXR-4PR80SS-D/2/ce21d10d2bb885b5641905883a618ff5",
+ author = "A. R. Bean and R. C. Newman",
notes = "experimental solubility data of carbon in silicon",
}
notes = "sic polytypes",
}
+@Article{koegler03,
+ author = "R. K{\"{o}}gler and F. Eichhorn and J. R. Kaschny and
+ A. M{\"{u}}cklich and H. Reuther and W. Skorupa and C.
+ Serre and A. Perez-Rodriguez",
+ title = "Synthesis of nano-sized Si{C} precipitates in Si by
+ simultaneous dual-beam implantation of {C}+ and Si+
+ ions",
+ journal = "Applied Physics A: Materials Science \& Processing",
+ volume = "76",
+ pages = "827--835",
+ month = mar,
+ year = "2003",
+ notes = "dual implantation, sic prec enhanced by vacancies,
+ precipitation by interstitial and substitutional
+ carbon, both mechanisms explained + refs",
+}
+
@Book{laplace,
author = "P. S. de Laplace",
title = "Th\'eorie analytique des probabilit\'es",
year = "1995",
}
-@Article{tersoff89,
+@Article{brenner89,
title = "Relationship between the embedded-atom method and
Tersoff potentials",
author = "Donald W. Brenner",
dumbbell configuration",
}
-@Article{gao02,
+@Article{gao02a,
title = "Cascade overlap and amorphization in $3{C}-Si{C}:$
Defect accumulation, topological features, and
disordering",
tersoff",
}
-@Article{batra87,
+@Article{kitabatake00,
title = "Si{C}/Si heteroepitaxial growth",
author = "M. Kitabatake",
journal = "Thin Solid Films",
notes = "si self interstitial, diffusion, tbmd",
}
-@Article{tang97,
+@Article{johnson98,
+ author = "M. D. Johnson and M.-J. Caturla and T. D\'{\i}az de la
+ Rubia",
+ collaboration = "",
+ title = "A kinetic Monte--Carlo study of the effective
+ diffusivity of the silicon self-interstitial in the
+ presence of carbon and boron",
+ publisher = "AIP",
+ year = "1998",
+ journal = "Journal of Applied Physics",
+ volume = "84",
+ number = "4",
+ pages = "1963--1967",
+ keywords = "MONTE CARLO METHOD; DIFFUSION; SILICON; INTERSTITIALS;
+ CARBON ADDITIONS; BORON ADDITIONS; elemental
+ semiconductors; self-diffusion",
+ URL = "http://link.aip.org/link/?JAP/84/1963/1",
+ doi = "10.1063/1.368328",
+ notes = "kinetic monte carlo of si self interstitial
+ diffsuion",
+}
+
+@Article{bar-yam84,
+ title = "Barrier to Migration of the Silicon
+ Self-Interstitial",
+ author = "Y. Bar-Yam and J. D. Joannopoulos",
+ journal = "Phys. Rev. Lett.",
+ volume = "52",
+ number = "13",
+ pages = "1129--1132",
+ numpages = "3",
+ year = "1984",
+ month = mar,
+ doi = "10.1103/PhysRevLett.52.1129",
+ publisher = "American Physical Society",
+ notes = "si self-interstitial migration barrier",
+}
+
+@Article{bar-yam84_2,
+ title = "Electronic structure and total-energy migration
+ barriers of silicon self-interstitials",
+ author = "Y. Bar-Yam and J. D. Joannopoulos",
+ journal = "Phys. Rev. B",
+ volume = "30",
+ number = "4",
+ pages = "1844--1852",
+ numpages = "8",
+ year = "1984",
+ month = aug,
+ doi = "10.1103/PhysRevB.30.1844",
+ publisher = "American Physical Society",
+}
+
+@Article{bloechl93,
+ title = "First-principles calculations of self-diffusion
+ constants in silicon",
+ author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
+ and D. B. Laks and W. Andreoni and S. T. Pantelides",
+ journal = "Phys. Rev. Lett.",
+ volume = "70",
+ number = "16",
+ pages = "2435--2438",
+ numpages = "3",
+ year = "1993",
+ month = apr,
+ doi = "10.1103/PhysRevLett.70.2435",
+ publisher = "American Physical Society",
+ notes = "si self int diffusion by ab initio md, formation
+ entropy calculations",
+}
+
+@Article{colombo02,
title = "Tight-binding theory of native point defects in
silicon",
author = "L. Colombo",
doi = "10.1103/PhysRevB.68.235205",
publisher = "American Physical Society",
notes = "formation energies of intrinisc point defects in
- silicon, si self interstitials",
+ silicon, si self interstitials, free energy",
+}
+
+@Article{goedecker02,
+ title = "A Fourfold Coordinated Point Defect in Silicon",
+ author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
+ journal = "Phys. Rev. Lett.",
+ volume = "88",
+ number = "23",
+ pages = "235501",
+ numpages = "4",
+ year = "2002",
+ month = may,
+ doi = "10.1103/PhysRevLett.88.235501",
+ publisher = "American Physical Society",
+ notes = "first time ffcd, fourfold coordinated point defect in
+ silicon",
}
@Article{ma10,
notes = "si self interstitial diffusion + refs",
}
+@Article{posselt06,
+ title = "Atomistic simulations on the thermal stability of the
+ antisite pair in 3{C}- and 4{H}-Si{C}",
+ author = "M. Posselt and F. Gao and W. J. Weber",
+ journal = "Phys. Rev. B",
+ volume = "73",
+ number = "12",
+ pages = "125206",
+ numpages = "8",
+ year = "2006",
+ month = mar,
+ doi = "10.1103/PhysRevB.73.125206",
+ publisher = "American Physical Society",
+}
+
+@Article{posselt08,
+ title = "Correlation between self-diffusion in Si and the
+ migration mechanisms of vacancies and
+ self-interstitials: An atomistic study",
+ author = "M. Posselt and F. Gao and H. Bracht",
+ journal = "Phys. Rev. B",
+ volume = "78",
+ number = "3",
+ pages = "035208",
+ numpages = "9",
+ year = "2008",
+ month = jul,
+ doi = "10.1103/PhysRevB.78.035208",
+ publisher = "American Physical Society",
+ notes = "si self-interstitial and vacancy diffusion, stillinger
+ weber and tersoff",
+}
+
@Article{gao2001,
title = "Ab initio and empirical-potential studies of defect
properties in $3{C}-Si{C}$",
notes = "defects in 3c-sic",
}
+@Article{gao02,
+ title = "Empirical potential approach for defect properties in
+ 3{C}-Si{C}",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "191",
+ number = "1-4",
+ pages = "504--508",
+ year = "2002",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(02)00600-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-453NR6B-G/2/e65b0730e94e13d66f72a2147b449ea7",
+ author = "Fei Gao and William J. Weber",
+ keywords = "Empirical potential",
+ keywords = "Defect properties",
+ keywords = "Silicon carbide",
+ keywords = "Computer simulation",
+ notes = "sic potential, brenner type, like erhart/albe",
+}
+
+@Article{gao04,
+ title = "Atomistic study of intrinsic defect migration in
+ 3{C}-Si{C}",
+ author = "Fei Gao and William J. Weber and M. Posselt and V.
+ Belko",
+ journal = "Phys. Rev. B",
+ volume = "69",
+ number = "24",
+ pages = "245205",
+ numpages = "5",
+ year = "2004",
+ month = jun,
+ doi = "10.1103/PhysRevB.69.245205",
+ publisher = "American Physical Society",
+ notes = "defect migration in sic",
+}
+
+@Article{gao07,
+ author = "F. Gao and J. Du and E. J. Bylaska and M. Posselt and
+ W. J. Weber",
+ collaboration = "",
+ title = "Ab Initio atomic simulations of antisite pair recovery
+ in cubic silicon carbide",
+ publisher = "AIP",
+ year = "2007",
+ journal = "Applied Physics Letters",
+ volume = "90",
+ number = "22",
+ eid = "221915",
+ numpages = "3",
+ pages = "221915",
+ keywords = "ab initio calculations; silicon compounds; antisite
+ defects; wide band gap semiconductors; molecular
+ dynamics method; density functional theory;
+ electron-hole recombination; photoluminescence;
+ impurities; diffusion",
+ URL = "http://link.aip.org/link/?APL/90/221915/1",
+ doi = "10.1063/1.2743751",
+}
+
@Article{mattoni2002,
title = "Self-interstitial trapping by carbon complexes in
crystalline silicon",
doi = "10.1103/PhysRevB.66.195214",
publisher = "American Physical Society",
notes = "c in c-si, diffusion, interstitial configuration +
- links, interaction of carbon and silicon
- interstitials",
+ links, interaction of carbon and silicon interstitials,
+ tersoff suitability",
}
@Article{leung99,
@Article{capaz94,
title = "Identification of the migration path of interstitial
carbon in silicon",
- author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos",
+ author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
journal = "Phys. Rev. B",
volume = "50",
number = "11",
dumbbell",
}
+@Article{capaz98,
+ title = "Theory of carbon-carbon pairs in silicon",
+ author = "R. B. Capaz and A. {Dal Pino} and J. D. Joannopoulos",
+ journal = "Phys. Rev. B",
+ volume = "58",
+ number = "15",
+ pages = "9845--9850",
+ numpages = "5",
+ year = "1998",
+ month = oct,
+ doi = "10.1103/PhysRevB.58.9845",
+ publisher = "American Physical Society",
+ notes = "carbon pairs in si",
+}
+
@Article{dal_pino93,
title = "Ab initio investigation of carbon-related defects in
silicon",
- author = "A. Dal Pino and Andrew M. Rappe and J. D.
+ author = "A. {Dal Pino} and Andrew M. Rappe and J. D.
Joannopoulos",
journal = "Phys. Rev. B",
volume = "47",
path formation",
}
+@Article{car85,
+ title = "Unified Approach for Molecular Dynamics and
+ Density-Functional Theory",
+ author = "R. Car and M. Parrinello",
+ journal = "Phys. Rev. Lett.",
+ volume = "55",
+ number = "22",
+ pages = "2471--2474",
+ numpages = "3",
+ year = "1985",
+ month = nov,
+ doi = "10.1103/PhysRevLett.55.2471",
+ publisher = "American Physical Society",
+ notes = "car parrinello method, dft and md",
+}
+
@Article{kelires97,
title = "Short-range order, bulk moduli, and physical trends in
c-$Si1-x$$Cx$ alloys",
@Article{song90,
title = "{EPR} identification of the single-acceptor state of
interstitial carbon in silicon",
- author = "G. D. Watkins L. W. Song",
+ author = "L. W. Song and G. D. Watkins",
journal = "Phys. Rev. B",
volume = "42",
number = "9",
@Article{laveant2002,
title = "Epitaxy of carbon-rich silicon with {MBE}",
- author = "P. Laveant and G. Gerth and P. Werner and U.
- G{\"o}sele",
journal = "Materials Science and Engineering B",
volume = "89",
number = "1-3",
pages = "241--245",
- keywords = "Growth; Epitaxy; MBE; Carbon; Silicon",
+ year = "2002",
+ ISSN = "0921-5107",
+ doi = "DOI: 10.1016/S0921-5107(01)00794-2",
+ URL = "http://www.sciencedirect.com/science/article/B6TXF-44YVPGS-1V/2/024ece074ad18ebbec62a39a2510a268",
+ author = "P. Lav\'eant and G. Gerth and P. Werner and U.
+ G{\"{o}}sele",
notes = "low c in si, tensile stress to compensate compressive
stress, avoid sic precipitation",
}
precipitate",
}
+@InProceedings{werner96,
+ author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
+ Eichler",
+ booktitle = "Ion Implantation Technology. Proceedings of the 11th
+ International Conference on",
+ title = "{TEM} investigation of {C}-Si defects in carbon
+ implanted silicon",
+ year = "1996",
+ month = jun,
+ volume = "",
+ number = "",
+ pages = "675--678",
+ keywords = "beta;-SiC precipitates;30 s;700 to 1300 C;C
+ atom/radiation induced defect interaction;C depth
+ distribution;C precipitation;C-Si defects;C-Si
+ dimers;CZ Si;HREM;Si:C;TEM;buried layer morphology;high
+ energy ion implantation;ion implantation;metastable
+ agglomerates;microdefects;positron annihilation
+ spectroscopy;rapid thermal annealing;secondary ion mass
+ spectrometry;vacancy clusters;buried
+ layers;carbon;elemental semiconductors;impurity-defect
+ interactions;ion implantation;positron
+ annihilation;precipitation;rapid thermal
+ annealing;secondary ion mass
+ spectra;silicon;transmission electron
+ microscopy;vacancies (crystal);",
+ doi = "10.1109/IIT.1996.586497",
+ ISSN = "",
+ notes = "c-si agglomerates dumbbells",
+}
+
@Article{strane94,
author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
Picraux and J. K. Watanabe and J. W. Mayer",
keywords = "SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS",
URL = "http://link.aip.org/link/?JAP/76/3656/1",
doi = "10.1063/1.357429",
- notes = "strained si-c to 3c-sic, carbon nucleation + refs",
+ notes = "strained si-c to 3c-sic, carbon nucleation + refs,
+ precipitation by substitutional carbon, coherent prec,
+ coherent to incoherent transition strain vs interface
+ energy",
+}
+
+@Article{fischer95,
+ author = "G. G. Fischer and P. Zaumseil and E. Bugiel and H. J.
+ Osten",
+ collaboration = "",
+ title = "Investigation of the high temperature behavior of
+ strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
+ publisher = "AIP",
+ year = "1995",
+ journal = "Journal of Applied Physics",
+ volume = "77",
+ number = "5",
+ pages = "1934--1937",
+ keywords = "SILICON CARBIDES; SILICON; HETEROSTRUCTURES; STRAINS;
+ XRD; MOLECULAR BEAM EPITAXY; STABILITY; TENSILE
+ PROPERTIES; EPITAXIAL LAYERS; ANNEALING; PRECIPITATION;
+ TEMPERATURE RANGE 04001000 K",
+ URL = "http://link.aip.org/link/?JAP/77/1934/1",
+ doi = "10.1063/1.358826",
}
@Article{edgar92,
NETHERLANDS",
}
+@Article{zirkelbach09,
+ title = "Molecular dynamics simulation of defect formation and
+ precipitation in heavily carbon doped silicon",
+ journal = "Materials Science and Engineering: B",
+ volume = "159-160",
+ number = "",
+ pages = "149--152",
+ year = "2009",
+ note = "EMRS 2008 Spring Conference Symposium K: Advanced
+ Silicon Materials Research for Electronic and
+ Photovoltaic Applications",
+ ISSN = "0921-5107",
+ doi = "DOI: 10.1016/j.mseb.2008.10.010",
+ URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
+ author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
+ B. Stritzker",
+ keywords = "Silicon",
+ keywords = "Carbon",
+ keywords = "Silicon carbide",
+ keywords = "Nucleation",
+ keywords = "Defect formation",
+ keywords = "Molecular dynamics simulations",
+}
+
+@Article{zirkelbach10a,
+ title = "Defects in Carbon implanted Silicon calculated by
+ classical potentials and first principles methods",
+ journal = "to be published",
+ volume = "",
+ number = "",
+ pages = "",
+ year = "2010",
+ author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
+ K. N. Lindner and W. G. Schmidtd and E. Rauls",
+}
+
+@Article{zirkelbach10b,
+ title = "Extensive first principles study of carbon defects in
+ silicon",
+ journal = "to be published",
+ volume = "",
+ number = "",
+ pages = "",
+ year = "2010",
+ author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
+ K. N. Lindner and W. G. Schmidtd and E. Rauls",
+}
+
+@Article{zirkelbach10c,
+ title = "...",
+ journal = "to be published",
+ volume = "",
+ number = "",
+ pages = "",
+ year = "2010",
+ author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
+ K. N. Lindner and W. G. Schmidtd and E. Rauls",
+}
+
@Article{lindner99,
title = "Controlling the density distribution of Si{C}
nanocrystals for the ion beam synthesis of buried Si{C}
number = "1-4",
pages = "528--533",
year = "1999",
- note = "",
ISSN = "0168-583X",
doi = "DOI: 10.1016/S0168-583X(98)00787-3",
URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
author = "J. K. N. Lindner and B. Stritzker",
+ notes = "3c-sic precipitation model, c-si dimers (dumbbells)",
}
@Article{lindner01,
ISSN = "0168-583X",
doi = "DOI: 10.1016/S0168-583X(01)00504-3",
URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
- author = "Jörg K. N. Lindner",
+ author = "J{\"{o}}rg K. N. Lindner",
}
@Article{lindner02,
notes = "ibs, burried sic layers",
}
+@Article{ito04,
+ title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
+ application in buffer layer for Ga{N} epitaxial
+ growth",
+ journal = "Applied Surface Science",
+ volume = "238",
+ number = "1-4",
+ pages = "159--164",
+ year = "2004",
+ note = "APHYS'03 Special Issue",
+ ISSN = "0169-4332",
+ doi = "DOI: 10.1016/j.apsusc.2004.05.199",
+ URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
+ author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
+ and S. Nishio and K. Yasuda and Y. Ishigami",
+ notes = "gan on 3c-sic",
+}
+
@Article{alder57,
author = "B. J. Alder and T. E. Wainwright",
title = "Phase Transition for a Hard Sphere System",
FILMS; INDUSTRY",
URL = "http://link.aip.org/link/?JAP/76/1363/1",
doi = "10.1063/1.358463",
+ notes = "sic intro, properties",
+}
+
+@Article{neudeck95,
+ author = "P. G. Neudeck",
+ title = "{PROGRESS} {IN} {SILICON}-{CARBIDE} {SEMICONDUCTOR}
+ {ELECTRONICS} {TECHNOLOGY}",
+ journal = "Journal of Electronic Materials",
+ year = "1995",
+ volume = "24",
+ number = "4",
+ pages = "283--288",
+ month = apr,
}
@Article{foo,
doi = "DOI: 10.1016/0038-1101(96)00045-7",
URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
author = "J. B. Casady and R. W. Johnson",
+ notes = "sic intro",
}
@Article{giancarli98,
number = "2",
pages = "209--212",
year = "1978",
- notes = "modifief lely process",
+ notes = "modified lely process",
ISSN = "0022-0248",
doi = "DOI: 10.1016/0022-0248(78)90169-0",
URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
notes = "cvd of 3c-sic on si, sic buffer layer",
}
-@Article{nishino:4889,
+@Article{nishino87,
author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
and Hiroyuki Matsunami",
collaboration = "",
number = "1-2",
pages = "72--80",
year = "1995",
- notes = "solid source mbe",
ISSN = "0022-0248",
doi = "DOI: 10.1016/0022-0248(95)00170-0",
URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
- author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
- and W. Richter",
+ author = "A. Fissel and U. Kaiser and E. Ducke and B.
+ Schr{\"{o}}ter and W. Richter",
+ notes = "solid source mbe of 3c-sic on si and 6h-sic",
+}
+
+@Article{fissel95_apl,
+ author = "A. Fissel and B. Schr{\"{o}}ter and W. Richter",
+ collaboration = "",
+ title = "Low-temperature growth of Si{C} thin films on Si and
+ 6{H}--Si{C} by solid-source molecular beam epitaxy",
+ publisher = "AIP",
+ year = "1995",
+ journal = "Applied Physics Letters",
+ volume = "66",
+ number = "23",
+ pages = "3182--3184",
+ keywords = "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; MORPHOLOGY;
+ RHEED; NUCLEATION",
+ URL = "http://link.aip.org/link/?APL/66/3182/1",
+ doi = "10.1063/1.113716",
+ notes = "mbe 3c-sic on si and 6h-sic",
}
@Article{borders71,
number = "11",
pages = "509--511",
URL = "http://link.aip.org/link/?APL/18/509/1",
- notes = "first time sic by ibs",
doi = "10.1063/1.1653516",
+ notes = "first time sic by ibs, follow cites for precipitation
+ ideas",
}
@Article{reeson87,
pages = "1551--1555",
URL = "http://link.aip.org/link/?JCP/30/1551/1",
doi = "10.1063/1.1730236",
- notes = "solubility of c in c-si",
+ notes = "solubility of c in c-si, si-c phase diagram",
}
@Article{cowern96,
publisher = "American Physical Society",
}
+@Article{brenner90,
+ title = "Empirical potential for hydrocarbons for use in
+ simulating the chemical vapor deposition of diamond
+ films",
+ author = "Donald W. Brenner",
+ journal = "Phys. Rev. B",
+ volume = "42",
+ number = "15",
+ pages = "9458--9471",
+ numpages = "13",
+ year = "1990",
+ month = nov,
+ doi = "10.1103/PhysRevB.42.9458",
+ publisher = "American Physical Society",
+ notes = "brenner hydro carbons",
+}
+
+@Article{bazant96,
+ title = "Modeling of Covalent Bonding in Solids by Inversion of
+ Cohesive Energy Curves",
+ author = "Martin Z. Bazant and Efthimios Kaxiras",
+ journal = "Phys. Rev. Lett.",
+ volume = "77",
+ number = "21",
+ pages = "4370--4373",
+ numpages = "3",
+ year = "1996",
+ month = nov,
+ doi = "10.1103/PhysRevLett.77.4370",
+ publisher = "American Physical Society",
+ notes = "first si edip",
+}
+
@Article{bazant97,
title = "Environment-dependent interatomic potential for bulk
silicon",
month = oct,
doi = "10.1103/PhysRevB.56.8542",
publisher = "American Physical Society",
+ notes = "second si edip",
}
@Article{justo98,
title = "Interatomic potential for silicon defects and
disordered phases",
- author = "Jo\~ao F. Justo and Martin Z. Bazant and Efthimios
- Kaxiras and V. V. Bulatov and Sidney Yip",
+ author = "Jo\tilde{a}o F. Justo and Martin Z. Bazant and
+ Efthimios Kaxiras and V. V. Bulatov and Sidney Yip",
journal = "Phys. Rev. B",
volume = "58",
number = "5",
month = aug,
doi = "10.1103/PhysRevB.58.2539",
publisher = "American Physical Society",
+ notes = "latest si edip, good dislocation explanation",
}
@Article{parcas_md,
angular distribution, coordination",
}
-@Article{wen:073522,
+@Article{wen09,
author = "C. Wen and Y. M. Wang and W. Wan and F. H. Li and J.
W. Liang and J. Zou",
collaboration = "",
stacking faults; wide band gap semiconductors",
URL = "http://link.aip.org/link/?JAP/106/073522/1",
doi = "10.1063/1.3234380",
- notes = "sic/si interface, follow refs",
+ notes = "sic/si interface, follow refs, tem image
+ deconvolution, dislocation defects",
}
@Article{kitabatake93,
model, interface",
}
+@Article{chirita97,
+ title = "Strain relaxation and thermal stability of the
+ 3{C}-Si{C}(001)/Si(001) interface: {A} molecular
+ dynamics study",
+ journal = "Thin Solid Films",
+ volume = "294",
+ number = "1-2",
+ pages = "47--49",
+ year = "1997",
+ note = "",
+ ISSN = "0040-6090",
+ doi = "DOI: 10.1016/S0040-6090(96)09257-7",
+ URL = "http://www.sciencedirect.com/science/article/B6TW0-41WBB52-C/2/6ef684a04d02dd3b108f972377cde8f4",
+ author = "V. Chirita and L. Hultman and L. R. Wallenberg",
+ keywords = "Strain relaxation",
+ keywords = "Interfaces",
+ keywords = "Thermal stability",
+ keywords = "Molecular dynamics",
+ notes = "tersoff sic/si interface study",
+}
+
+@Article{cicero02,
+ title = "Ab initio Study of Misfit Dislocations at the
+ $Si{C}/Si(001)$ Interface",
+ author = "Giancarlo Cicero and Laurent Pizzagalli and Alessandra
+ Catellani",
+ journal = "Phys. Rev. Lett.",
+ volume = "89",
+ number = "15",
+ pages = "156101",
+ numpages = "4",
+ year = "2002",
+ month = sep,
+ doi = "10.1103/PhysRevLett.89.156101",
+ publisher = "American Physical Society",
+ notes = "sic/si interface study",
+}
+
@Article{pizzagalli03,
title = "Theoretical investigations of a highly mismatched
interface: Si{C}/Si(001)",
publisher = "American Physical Society",
notes = "tersoff md and ab initio sic/si interface study",
}
+
+@Article{tang07,
+ title = "Atomic configurations of dislocation core and twin
+ boundaries in $ 3{C}-Si{C} $ studied by high-resolution
+ electron microscopy",
+ author = "C. Y. Tang and F. H. Li and R. Wang and J. Zou and X.
+ H. Zheng and J. W. Liang",
+ journal = "Phys. Rev. B",
+ volume = "75",
+ number = "18",
+ pages = "184103",
+ numpages = "7",
+ year = "2007",
+ month = may,
+ doi = "10.1103/PhysRevB.75.184103",
+ publisher = "American Physical Society",
+ notes = "hrem image deconvolution on 3c-sic on si, distinguish
+ si and c",
+}
+
+@Article{hornstra58,
+ title = "Dislocations in the diamond lattice",
+ journal = "Journal of Physics and Chemistry of Solids",
+ volume = "5",
+ number = "1-2",
+ pages = "129--141",
+ year = "1958",
+ note = "",
+ ISSN = "0022-3697",
+ doi = "DOI: 10.1016/0022-3697(58)90138-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TXR-46MMPHJ-10D/2/7176c01c29cd4e73faa26ab2aacdcea5",
+ author = "J. Hornstra",
+ notes = "dislocations in diamond lattice",
+}
+
+@Article{eichhorn99,
+ author = "F. Eichhorn and N. Schell and W. Matz and R.
+ K{\"{o}}gler",
+ collaboration = "",
+ title = "Strain and Si{C} particle formation in silicon
+ implanted with carbon ions of medium fluence studied by
+ synchrotron x-ray diffraction",
+ publisher = "AIP",
+ year = "1999",
+ journal = "Journal of Applied Physics",
+ volume = "86",
+ number = "8",
+ pages = "4184--4187",
+ keywords = "silicon; carbon; elemental semiconductors; chemical
+ interdiffusion; ion implantation; X-ray diffraction;
+ precipitation; semiconductor doping",
+ URL = "http://link.aip.org/link/?JAP/86/4184/1",
+ doi = "10.1063/1.371344",
+ notes = "sic conversion by ibs, detected substitutional carbon,
+ expansion of si lattice",
+}
+
+@Article{eichhorn02,
+ author = "F. Eichhorn and N. Schell and A. M{\"{u}}cklich and H.
+ Metzger and W. Matz and R. K{\"{o}}gler",
+ collaboration = "",
+ title = "Structural relation between Si and Si{C} formed by
+ carbon ion implantation",
+ publisher = "AIP",
+ year = "2002",
+ journal = "Journal of Applied Physics",
+ volume = "91",
+ number = "3",
+ pages = "1287--1292",
+ keywords = "silicon compounds; wide band gap semiconductors; ion
+ implantation; annealing; X-ray scattering; transmission
+ electron microscopy",
+ URL = "http://link.aip.org/link/?JAP/91/1287/1",
+ doi = "10.1063/1.1428105",
+ notes = "3c-sic alignement to si host in ibs depending on
+ temperature, might explain c int to c sub trafo",
+}
+
+@Article{lucas10,
+ author = "G Lucas and M Bertolus and L Pizzagalli",
+ title = "An environment-dependent interatomic potential for
+ silicon carbide: calculation of bulk properties,
+ high-pressure phases, point and extended defects, and
+ amorphous structures",
+ journal = "Journal of Physics: Condensed Matter",
+ volume = "22",
+ number = "3",
+ pages = "035802",
+ URL = "http://stacks.iop.org/0953-8984/22/i=3/a=035802",
+ year = "2010",
+ notes = "edip sic",
+}
+
+@Article{godet03,
+ author = "J Godet and L Pizzagalli and S Brochard and P
+ Beauchamp",
+ title = "Comparison between classical potentials and ab initio
+ methods for silicon under large shear",
+ journal = "Journal of Physics: Condensed Matter",
+ volume = "15",
+ number = "41",
+ pages = "6943",
+ URL = "http://stacks.iop.org/0953-8984/15/i=41/a=004",
+ year = "2003",
+ notes = "comparison of empirical potentials, stillinger weber,
+ edip, tersoff, ab initio",
+}
+
+@Article{moriguchi98,
+ title = "Verification of Tersoff's Potential for Static
+ Structural Analysis of Solids of Group-{IV} Elements",
+ author = "Koji Moriguchi and Akira Shintani",
+ journal = "Japanese Journal of Applied Physics",
+ volume = "37",
+ number = "Part 1, No. 2",
+ pages = "414--422",
+ numpages = "8",
+ year = "1998",
+ URL = "http://jjap.ipap.jp/link?JJAP/37/414/",
+ doi = "10.1143/JJAP.37.414",
+ publisher = "The Japan Society of Applied Physics",
+ notes = "tersoff stringent test",
+}
+
+@Article{mazzarolo01,
+ title = "Low-energy recoils in crystalline silicon: Quantum
+ simulations",
+ author = "Massimiliano Mazzarolo and Luciano Colombo and Giorgio
+ Lulli and Eros Albertazzi",
+ journal = "Phys. Rev. B",
+ volume = "63",
+ number = "19",
+ pages = "195207",
+ numpages = "4",
+ year = "2001",
+ month = apr,
+ doi = "10.1103/PhysRevB.63.195207",
+ publisher = "American Physical Society",
+}
+
+@Article{holmstroem08,
+ title = "Threshold defect production in silicon determined by
+ density functional theory molecular dynamics
+ simulations",
+ author = "E. Holmstr{\"o}m and A. Kuronen and K. Nordlund",
+ journal = "Phys. Rev. B",
+ volume = "78",
+ number = "4",
+ pages = "045202",
+ numpages = "6",
+ year = "2008",
+ month = jul,
+ doi = "10.1103/PhysRevB.78.045202",
+ publisher = "American Physical Society",
+ notes = "threshold displacement comparison empirical and ab
+ initio",
+}
+
+@Article{nordlund97,
+ title = "Repulsive interatomic potentials calculated using
+ Hartree-Fock and density-functional theory methods",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "132",
+ number = "1",
+ pages = "45--54",
+ year = "1997",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(97)00447-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-4CP0TGF-91/2/1a9100c0aae82d2d258fc83dfdba23c1",
+ author = "K. Nordlund and N. Runeberg and D. Sundholm",
+ notes = "repulsive ab initio potential",
+}
+
+@Article{kresse96,
+ title = "Efficiency of ab-initio total energy calculations for
+ metals and semiconductors using a plane-wave basis
+ set",
+ journal = "Computational Materials Science",
+ volume = "6",
+ number = "1",
+ pages = "15--50",
+ year = "1996",
+ note = "",
+ ISSN = "0927-0256",
+ doi = "DOI: 10.1016/0927-0256(96)00008-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TWM-3VRVTBF-3/2/88689b1eacfe2b5fe57f09d37eff3b74",
+ author = "G. Kresse and J. Furthm{\"{u}}ller",
+ notes = "vasp ref",
+}
+
+@Article{bloechl94,
+ title = "Projector augmented-wave method",
+ author = "P. E. Bl{\"o}chl",
+ journal = "Phys. Rev. B",
+ volume = "50",
+ number = "24",
+ pages = "17953--17979",
+ numpages = "26",
+ year = "1994",
+ month = dec,
+ doi = "10.1103/PhysRevB.50.17953",
+ publisher = "American Physical Society",
+ notes = "paw method",
+}
+
+@Article{hamann79,
+ title = "Norm-Conserving Pseudopotentials",
+ author = "D. R. Hamann and M. Schl{\"u}ter and C. Chiang",
+ journal = "Phys. Rev. Lett.",
+ volume = "43",
+ number = "20",
+ pages = "1494--1497",
+ numpages = "3",
+ year = "1979",
+ month = nov,
+ doi = "10.1103/PhysRevLett.43.1494",
+ publisher = "American Physical Society",
+ notes = "norm-conserving pseudopotentials",
+}
+
+@Article{vanderbilt90,
+ title = "Soft self-consistent pseudopotentials in a generalized
+ eigenvalue formalism",
+ author = "David Vanderbilt",
+ journal = "Phys. Rev. B",
+ volume = "41",
+ number = "11",
+ pages = "7892--7895",
+ numpages = "3",
+ year = "1990",
+ month = apr,
+ doi = "10.1103/PhysRevB.41.7892",
+ publisher = "American Physical Society",
+ notes = "vasp pseudopotentials",
+}
+
+@Article{perdew86,
+ title = "Accurate and simple density functional for the
+ electronic exchange energy: Generalized gradient
+ approximation",
+ author = "John P. Perdew and Wang Yue",
+ journal = "Phys. Rev. B",
+ volume = "33",
+ number = "12",
+ pages = "8800--8802",
+ numpages = "2",
+ year = "1986",
+ month = jun,
+ doi = "10.1103/PhysRevB.33.8800",
+ publisher = "American Physical Society",
+ notes = "rapid communication gga",
+}
+
+@Article{perdew02,
+ title = "Generalized gradient approximations for exchange and
+ correlation: {A} look backward and forward",
+ journal = "Physica B: Condensed Matter",
+ volume = "172",
+ number = "1-2",
+ pages = "1--6",
+ year = "1991",
+ note = "",
+ ISSN = "0921-4526",
+ doi = "DOI: 10.1016/0921-4526(91)90409-8",
+ URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8GR9-3D/2/18e610a616e4d80b934079c89063ece7",
+ author = "John P. Perdew",
+ notes = "gga overview",
+}
+
+@Article{perdew92,
+ title = "Atoms, molecules, solids, and surfaces: Applications
+ of the generalized gradient approximation for exchange
+ and correlation",
+ author = "John P. Perdew and J. A. Chevary and S. H. Vosko and
+ Koblar A. Jackson and Mark R. Pederson and D. J. Singh
+ and Carlos Fiolhais",
+ journal = "Phys. Rev. B",
+ volume = "46",
+ number = "11",
+ pages = "6671--6687",
+ numpages = "16",
+ year = "1992",
+ month = sep,
+ doi = "10.1103/PhysRevB.46.6671",
+ publisher = "American Physical Society",
+ notes = "gga pw91 (as in vasp)",
+}
+
+@Article{baldereschi73,
+ title = "Mean-Value Point in the Brillouin Zone",
+ author = "A. Baldereschi",
+ journal = "Phys. Rev. B",
+ volume = "7",
+ number = "12",
+ pages = "5212--5215",
+ numpages = "3",
+ year = "1973",
+ month = jun,
+ doi = "10.1103/PhysRevB.7.5212",
+ publisher = "American Physical Society",
+ notes = "mean value k point",
+}
+
+@Article{zhu98,
+ title = "Ab initio pseudopotential calculations of dopant
+ diffusion in Si",
+ journal = "Computational Materials Science",
+ volume = "12",
+ number = "4",
+ pages = "309--318",
+ year = "1998",
+ note = "",
+ ISSN = "0927-0256",
+ doi = "DOI: 10.1016/S0927-0256(98)00023-8",
+ URL = "http://www.sciencedirect.com/science/article/B6TWM-3VB7F2K-7/2/aa864582273be8e054300efb7bd16a1b",
+ author = "Jing Zhu",
+ keywords = "TED (transient enhanced diffusion)",
+ keywords = "Boron dopant",
+ keywords = "Carbon dopant",
+ keywords = "Defect",
+ keywords = "ab initio pseudopotential method",
+ keywords = "Impurity cluster",
+ notes = "binding of c to si interstitial, c in si defects",
+}
+
+@Article{nejim95,
+ author = "A. Nejim and P. L. F. Hemment and J. Stoemenos",
+ collaboration = "",
+ title = "Si{C} buried layer formation by ion beam synthesis at
+ 950 [degree]{C}",
+ publisher = "AIP",
+ year = "1995",
+ journal = "Applied Physics Letters",
+ volume = "66",
+ number = "20",
+ pages = "2646--2648",
+ keywords = "SILICON; ION IMPLANTATION; CARBON IONS; SILICON
+ CARBIDES; BURIED LAYERS; SYNTHESIS; KEV RANGE 100 --
+ 1000; CRYSTAL DEFECTS; MORPHOLOGY; RBS; TRANSMISSION
+ ELECTRON MICROSCOPY",
+ URL = "http://link.aip.org/link/?APL/66/2646/1",
+ doi = "10.1063/1.113112",
+ notes = "precipitation mechanism by substitutional carbon, si
+ self interstitials react with further implanted c",
+}
+
+@Article{guedj98,
+ author = "C. Guedj and M. W. Dashiell and L. Kulik and J.
+ Kolodzey and A. Hairie",
+ collaboration = "",
+ title = "Precipitation of beta-Si{C} in Si[sub 1 - y]{C}[sub y]
+ alloys",
+ publisher = "AIP",
+ year = "1998",
+ journal = "Journal of Applied Physics",
+ volume = "84",
+ number = "8",
+ pages = "4631--4633",
+ keywords = "silicon compounds; precipitation; localised modes;
+ semiconductor epitaxial layers; infrared spectra;
+ Fourier transform spectra; thermal stability;
+ annealing",
+ URL = "http://link.aip.org/link/?JAP/84/4631/1",
+ doi = "10.1063/1.368703",
+ notes = "coherent 3C-SiC, topotactic, critical coherence size",
+}
+
+@Article{jones04,
+ author = "R Jones and B J Coomer and P R Briddon",
+ title = "Quantum mechanical modelling of defects in
+ semiconductors",
+ journal = "Journal of Physics: Condensed Matter",
+ volume = "16",
+ number = "27",
+ pages = "S2643",
+ URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
+ year = "2004",
+ notes = "ab inito init, vibrational modes, c defect in si",
+}
+
+@Article{park02,
+ author = "S. Y. Park and J. D'Arcy-Gall and D. Gall and J. A. N.
+ T Soares and Y.-W. Kim and H. Kim and P. Desjardins and
+ J. E. Greene and S. G. Bishop",
+ collaboration = "",
+ title = "Carbon incorporation pathways and lattice sites in
+ Si[sub 1 - y]{C}[sub y] alloys grown on Si(001) by
+ molecular-beam epitaxy",
+ publisher = "AIP",
+ year = "2002",
+ journal = "Journal of Applied Physics",
+ volume = "91",
+ number = "9",
+ pages = "5716--5727",
+ URL = "http://link.aip.org/link/?JAP/91/5716/1",
+ doi = "10.1063/1.1465122",
+ notes = "c substitutional incorporation pathway, dft and expt",
+}
+
+@Article{leary97,
+ title = "Dynamic properties of interstitial carbon and
+ carbon-carbon pair defects in silicon",
+ author = "P. Leary and R. Jones and S. {\"O}berg and V. J. B.
+ Torres",
+ journal = "Phys. Rev. B",
+ volume = "55",
+ number = "4",
+ pages = "2188--2194",
+ numpages = "6",
+ year = "1997",
+ month = jan,
+ doi = "10.1103/PhysRevB.55.2188",
+ publisher = "American Physical Society",
+ notes = "ab initio c in si and di-carbon defect, no formation
+ energies, different migration barriers and paths",
+}
+
+@Article{burnard93,
+ title = "Interstitial carbon and the carbon-carbon pair in
+ silicon: Semiempirical electronic-structure
+ calculations",
+ author = "Matthew J. Burnard and Gary G. DeLeo",
+ journal = "Phys. Rev. B",
+ volume = "47",
+ number = "16",
+ pages = "10217--10225",
+ numpages = "8",
+ year = "1993",
+ month = apr,
+ doi = "10.1103/PhysRevB.47.10217",
+ publisher = "American Physical Society",
+ notes = "semi empirical mndo, pm3 and mindo3 c in si and di
+ carbon defect, formation energies",
+}
+
+@Article{kaxiras96,
+ title = "Review of atomistic simulations of surface diffusion
+ and growth on semiconductors",
+ journal = "Computational Materials Science",
+ volume = "6",
+ number = "2",
+ pages = "158--172",
+ year = "1996",
+ note = "Proceedings of the Workshop on Virtual Molecular Beam
+ Epitaxy",
+ ISSN = "0927-0256",
+ doi = "DOI: 10.1016/0927-0256(96)00030-4",
+ URL = "http://www.sciencedirect.com/science/article/B6TWM-3VSFF1G-7/2/afc8408b00ded1ca2dc3ad1686c2dae6",
+ author = "Efthimios Kaxiras",
+ notes = "might contain c 100 db formation energy, overview md,
+ tight binding, first principles",
+}
+
+@Article{kaukonen98,
+ title = "Effect of {N} and {B} doping on the growth of {CVD}
+ diamond
+ $(100):{H}(2\ifmmode\times\else\texttimes\fi{}1)$
+ surfaces",
+ author = "M. Kaukonen and P. K. Sitch and G. Jungnickel and R.
+ M. Nieminen and Sami P{\"o}ykk{\"o} and D. Porezag and
+ Th. Frauenheim",
+ journal = "Phys. Rev. B",
+ volume = "57",
+ number = "16",
+ pages = "9965--9970",
+ numpages = "5",
+ year = "1998",
+ month = apr,
+ doi = "10.1103/PhysRevB.57.9965",
+ publisher = "American Physical Society",
+ notes = "constrained conjugate gradient relaxation technique
+ (crt)",
+}
+
+@Article{gali03,
+ title = "Correlation between the antisite pair and the ${DI}$
+ center in Si{C}",
+ author = "A. Gali and P. De\'ak and E. Rauls and N. T. Son and
+ I. G. Ivanov and F. H. C. Carlsson and E. Janz\'en and
+ W. J. Choyke",
+ journal = "Phys. Rev. B",
+ volume = "67",
+ number = "15",
+ pages = "155203",
+ numpages = "5",
+ year = "2003",
+ month = apr,
+ doi = "10.1103/PhysRevB.67.155203",
+ publisher = "American Physical Society",
+}
+
+@Article{chen98,
+ title = "Production and recovery of defects in Si{C} after
+ irradiation and deformation",
+ journal = "Journal of Nuclear Materials",
+ volume = "258-263",
+ number = "Part 2",
+ pages = "1803--1808",
+ year = "1998",
+ note = "",
+ ISSN = "0022-3115",
+ doi = "DOI: 10.1016/S0022-3115(98)00139-1",
+ URL = "http://www.sciencedirect.com/science/article/B6TXN-43G486N-47/2/56905f48f025ab98e5de4d6cde09c62b",
+ author = "J. Chen and P. Jung and H. Klein",
+}
+
+@Article{weber01,
+ title = "Accumulation, dynamic annealing and thermal recovery
+ of ion-beam-induced disorder in silicon carbide",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "175-177",
+ number = "",
+ pages = "26--30",
+ year = "2001",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(00)00542-5",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-435KH7Y-2R/2/8acc176700c95bb8614d96c40cfc5577",
+ author = "W. J. Weber and W. Jiang and S. Thevuthasan",
+ keywords = "Amorphization",
+ keywords = "Irradiation effects",
+ keywords = "Thermal recovery",
+ keywords = "Silicon carbide",
+}
+
+@Article{bockstedte03,
+ title = "Ab initio study of the migration of intrinsic defects
+ in $3{C}-Si{C}$",
+ author = "Michel Bockstedte and Alexander Mattausch and Oleg
+ Pankratov",
+ journal = "Phys. Rev. B",
+ volume = "68",
+ number = "20",
+ pages = "205201",
+ numpages = "17",
+ year = "2003",
+ month = nov,
+ doi = "10.1103/PhysRevB.68.205201",
+ publisher = "American Physical Society",
+ notes = "defect migration in sic",
+}
+
+@Article{rauls03a,
+ title = "Theoretical study of vacancy diffusion and
+ vacancy-assisted clustering of antisites in Si{C}",
+ author = "E. Rauls and Th. Frauenheim and A. Gali and P.
+ De\'ak",
+ journal = "Phys. Rev. B",
+ volume = "68",
+ number = "15",
+ pages = "155208",
+ numpages = "9",
+ year = "2003",
+ month = oct,
+ doi = "10.1103/PhysRevB.68.155208",
+ publisher = "American Physical Society",
+}
projects / lectures / latex.git / blobdiff