}
@Article{capano97,
+ author = "M. A. Capano and R. J. Trew",
+ title = "Silicon carbide electronic materials and devices",
+ journal = "MRS Bull.",
+ year = "1997",
+ volume = "22",
+ number = "3",
+ pages = "19--22",
+ publisher = "MATERIALS RESEARCH SOCIETY",
+}
+
+@Article{capano97_old,
author = "M. A. Capano and R. J. Trew",
title = "Silicon Carbide Electronic Materials and Devices",
journal = "MRS Bull.",
doi = "doi:10.1016/j.nimb.2006.12.118",
publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
NETHERLANDS",
+ abstract = "Periodically arranged, selforganised, nanometric,
+ amorphous precipitates have been observed after
+ high-fluence ion implantations into solids for a number
+ of ion/target combinations at certain implantation
+ conditions. A model describing the ordering process
+ based on compressive stress exerted by the amorphous
+ inclusions as a result of the density change upon
+ amorphisation is introduced. A Monte Carlo simulation
+ code, which focuses on high-fluence carbon
+ implantations into silicon, is able to reproduce
+ experimentally observed nanolamella distributions as
+ well as the formation of continuous amorphous layers.
+ By means of simulation, the selforganisation process
+ becomes traceable and detailed information about the
+ compositional and structural state during the ordering
+ process is obtained. Based on simulation results, a
+ recipe is proposed for producing broad distributions of
+ ordered lamellar structures.",
}
@Article{zirkelbach2006,
doi = "doi:10.1016/j.nimb.2005.08.162",
publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
NETHERLANDS",
+ abstract = "High-dose ion implantation of materials that undergo
+ drastic density change upon amorphization at certain
+ implantation conditions results in periodically
+ arranged, self-organized, nanometric configurations of
+ the amorphous phase. A simple model explaining the
+ phenomenon is introduced and implemented in a
+ Monte-Carlo simulation code. Through simulation
+ conditions for observing lamellar precipitates are
+ specified and additional information about the
+ compositional and structural state during the ordering
+ process is gained.",
}
@Article{zirkelbach2005,
doi = "doi:10.1016/j.commatsci.2004.12.016",
publisher = "ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM,
NETHERLANDS",
+ abstract = "Ion irradiation of materials, which undergo a drastic
+ density change upon amorphization have been shown to
+ exhibit selforganized, nanometric structures of the
+ amorphous phase in the crystalline host lattice. In
+ order to better understand the process a
+ Monte-Carlo-simulation code based on a simple model is
+ developed. In the present work we focus on high-dose
+ carbon implantations into silicon. The simulation is
+ able to reproduce results gained by cross-sectional TEM
+ measurements of high-dose carbon implanted silicon.
+ Necessary conditions can be specified for the
+ self-organization process and information is gained
+ about the compositional and structural state during the
+ ordering process which is difficult to be obtained by
+ experiment.",
}
@Article{zirkelbach09,
keywords = "Nucleation",
keywords = "Defect formation",
keywords = "Molecular dynamics simulations",
+ abstract = "The precipitation process of silicon carbide in
+ heavily carbon doped silicon is not yet fully
+ understood. High resolution transmission electron
+ microscopy observations suggest that in a first step
+ carbon atoms form C-Si dumbbells on regular Si lattice
+ sites which agglomerate into large clusters. In a
+ second step, when the cluster size reaches a radius of
+ a few nm, the high interfacial energy due to the SiC/Si
+ lattice misfit of almost 20\% is overcome and the
+ precipitation occurs. By simulation, details of the
+ precipitation process can be obtained on the atomic
+ level. A recently proposed parametrization of a
+ Tersoff-like bond order potential is used to model the
+ system appropriately. Preliminary results gained by
+ molecular dynamics simulations using this potential are
+ presented.",
}
@Article{zirkelbach10,
month = sep,
doi = "10.1103/PhysRevB.82.094110",
publisher = "American Physical Society",
-}
-
-@Article{zirkelbach11a,
- title = "First principles study of defects in carbon implanted
- silicon",
- journal = "to be published",
- volume = "",
- number = "",
- pages = "",
- year = "2011",
- author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner
- and W. G. Schmidt and E. Rauls",
-}
-
-@Article{zirkelbach11b,
- title = "...",
- journal = "to be published",
- volume = "",
- number = "",
- pages = "",
- year = "2011",
+ abstract = "A comparative theoretical investigation of carbon
+ interstitials in silicon is presented. Calculations
+ using classical potentials are compared to
+ first-principles density-functional theory calculations
+ of the geometries, formation, and activation energies
+ of the carbon dumbbell interstitial, showing the
+ importance of a quantum-mechanical description of this
+ system. In contrast to previous studies, the present
+ first-principles calculations of the interstitial
+ carbon migration path yield an activation energy that
+ excellently matches the experiment. The bond-centered
+ interstitial configuration shows a net magnetization of
+ two electrons, illustrating the need for spin-polarized
+ calculations.",
+}
+
+@Article{zirkelbach11,
+ journal = "Phys. Rev. B",
+ month = aug,
+ URL = "http://link.aps.org/doi/10.1103/PhysRevB.84.064126",
+ publisher = "American Physical Society",
author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
K. N. Lindner and W. G. Schmidt and E. Rauls",
+ title = "Combined \textit{ab initio} and classical potential
+ simulation study on silicon carbide precipitation in
+ silicon",
+ year = "2011",
+ pages = "064126",
+ numpages = "18",
+ volume = "84",
+ doi = "10.1103/PhysRevB.84.064126",
+ issue = "6",
+ abstract = "Atomistic simulations on the silicon carbide
+ precipitation in bulk silicon employing both, classical
+ potential and first-principles methods are presented.
+ The calculations aim at a comprehensive, microscopic
+ understanding of the precipitation mechanism in the
+ context of controversial discussions in the literature.
+ For the quantum-mechanical treatment, basic processes
+ assumed in the precipitation process are calculated in
+ feasible systems of small size. The migration mechanism
+ of a carbon \hkl<1 0 0> interstitial and silicon \hkl<1
+ 1 0> self-interstitial in otherwise defect-free silicon
+ are investigated using density functional theory
+ calculations. The influence of a nearby vacancy,
+ another carbon interstitial and a substitutional defect
+ as well as a silicon self-interstitial has been
+ investigated systematically. Interactions of various
+ combinations of defects have been characterized
+ including a couple of selected migration pathways
+ within these configurations. Almost all of the
+ investigated pairs of defects tend to agglomerate
+ allowing for a reduction in strain. The formation of
+ structures involving strong carbon-carbon bonds turns
+ out to be very unlikely. In contrast, substitutional
+ carbon occurs in all probability. A long range capture
+ radius has been observed for pairs of interstitial
+ carbon as well as interstitial carbon and vacancies. A
+ rather small capture radius is predicted for
+ substitutional carbon and silicon self-interstitials.
+ Initial assumptions regarding the precipitation
+ mechanism of silicon carbide in bulk silicon are
+ established and conformability to experimental findings
+ is discussed. Furthermore, results of the accurate
+ first-principles calculations on defects and carbon
+ diffusion in silicon are compared to results of
+ classical potential simulations revealing significant
+ limitations of the latter method. An approach to work
+ around this problem is proposed. Finally, results of
+ the classical potential molecular dynamics simulations
+ of large systems are examined, which reinforce previous
+ assumptions and give further insight into basic
+ processes involved in the silicon carbide transition.",
}
@Article{lindner95,
year = "1994",
doi = "10.1557/PROC-354-171",
URL = "http://dx.doi.org/10.1557/PROC-354-171",
- eprint = "http://journals.cambridge.org/article_S1946427400420853",
notes = "first time ibs at moderate temperatures",
}
notes = "c int diffusion barrier",
}
+@Article{haeberlen10,
+ title = "Structural characterization of cubic and hexagonal
+ Ga{N} thin films grown by {IBA}-{MBE} on Si{C}/Si",
+ journal = "Journal of Crystal Growth",
+ volume = "312",
+ number = "6",
+ pages = "762--769",
+ year = "2010",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "10.1016/j.jcrysgro.2009.12.048",
+ URL = "http://www.sciencedirect.com/science/article/pii/S0022024809011452",
+ author = "M. H{\"a}berlen and J. W. Gerlach and B. Murphy and J.
+ K. N. Lindner and B. Stritzker",
+}
+
@Article{ito04,
title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
application in buffer layer for Ga{N} epitaxial
notes = "cvd of 3c-sic on si, sic buffer layer",
}
+@Article{nagasawa06,
+ author = "H. Nagasawa and K. Yagi and T. Kawahara and N. Hatta",
+ title = "Reducing Planar Defects in 3{C}¿Si{C}",
+ journal = "Chemical Vapor Deposition",
+ volume = "12",
+ number = "8-9",
+ publisher = "WILEY-VCH Verlag",
+ ISSN = "1521-3862",
+ URL = "http://dx.doi.org/10.1002/cvde.200506466",
+ doi = "10.1002/cvde.200506466",
+ pages = "502--508",
+ keywords = "Defect structures, Epitaxy, Silicon carbide",
+ year = "2006",
+ notes = "cvd on si",
+}
+
@Article{nishino87,
author = "Shigehiro Nishino and Hajime Suhara and Hideyuki Ono
and Hiroyuki Matsunami",
}
@Article{parcas_md,
- title = "{PARCAS} molecular dynamics code",
+ journal = "{PARCAS} molecular dynamics code",
author = "K. Nordlund",
year = "2008",
}
title = "The Fitting of Pseudopotentials to Experimental Data
and Their Subsequent Application",
editor = "Frederick Seitz Henry Ehrenreich and David Turnbull",
- booktitle = "",
publisher = "Academic Press",
year = "1970",
volume = "24",
Road 44135 Cleveland OH",
title = "Progress in silicon carbide semiconductor electronics
technology",
- journal = "Journal of Electronic Materials",
+ journal = "J. Electron. Mater.",
publisher = "Springer Boston",
ISSN = "0361-5235",
keyword = "Chemistry and Materials Science",
notes = "sic data, advantages of 3c sic",
}
+@InProceedings{pribble02,
+ author = "W. L. Pribble and J. W. Palmour and S. T. Sheppard and
+ R. P. Smith and S. T. Allen and T. J. Smith and Z. Ring
+ and J. J. Sumakeris and A. W. Saxler and J. W.
+ Milligan",
+ booktitle = "Microwave Symposium Digest, 2002 IEEE MTT-S
+ International",
+ title = "Applications of Si{C} {MESFET}s and Ga{N} {HEMT}s in
+ power amplifier design",
+ year = "2002",
+ month = "",
+ volume = "",
+ number = "",
+ pages = "1819--1822",
+ doi = "10.1109/MWSYM.2002.1012216",
+ ISSN = "",
+ notes = "hdtv",
+}
+
+@InProceedings{temcamani01,
+ author = "F. Temcamani and P. Pouvil and O. Noblanc and C.
+ Brylinski and P. Bannelier and B. Darges and J. P.
+ Prigent",
+ booktitle = "Microwave Symposium Digest, 2001 IEEE MTT-S
+ International",
+ title = "Silicon carbide {MESFET}s performances and application
+ in broadcast power amplifiers",
+ year = "2001",
+ month = "",
+ volume = "",
+ number = "",
+ pages = "641--644",
+ doi = "10.1109/MWSYM.2001.966976",
+ ISSN = "",
+ notes = "hdtv",
+}
+
+@Article{pensl00,
+ author = "Gerhard Pensl and Michael Bassler and Florin Ciobanu
+ and Valeri Afanas'ev and Hiroshi Yano and Tsunenobu
+ Kimoto and Hiroyuki Matsunami",
+ title = "Traps at the Si{C}/Si{O2}-Interface",
+ journal = "MRS Proc.",
+ volume = "640",
+ number = "",
+ pages = "",
+ year = "2000",
+ doi = "10.1557/PROC-640-H3.2",
+ URL = "http://dx.doi.org/10.1557/PROC-640-H3.2",
+}
+
@Article{bhatnagar93,
author = "M. Bhatnagar and B. J. Baliga",
journal = "Electron Devices, IEEE Transactions on",
year = "1994",
publisher = "Suhrkamp",
}
+
+@Misc{attenberger03,
+ author = "Wilfried Attenberger and Jörg Lindner and Bernd
+ Stritzker",
+ title = "A {method} {for} {forming} {a} {layered}
+ {semiconductor} {structure} {and} {corresponding}
+ {structure}",
+ year = "2003",
+ month = apr,
+ day = "24",
+ note = "WO 2003/034484 A3R4",
+ version = "A3R4",
+ howpublished = "Patent Application",
+ nationality = "WO",
+ filing_num = "EP0211423",
+ yearfiled = "2002",
+ monthfiled = "10",
+ dayfiled = "11",
+ pat_refs = "",
+ ipc_class = "7B 81C 1/00 B; 7H 01L 21/04 B; 7H 01L 21/265 B; 7H 01L
+ 21/322 B; 7H 01L 21/324 B; 7H 01L 21/74 A; 7H 01L
+ 21/762 B; 7H 01L 29/165 B; 7H 01L 33/00 B",
+ us_class = "",
+ abstract = "The following invention provides a method for forming
+ a layered semiconductor structure having a layer (5) of
+ a first semiconductor material on a substrate (1; 1')
+ of at least one second semiconductor material,
+ comprising the steps of: providing said substrate (1;
+ 1'); burying said layer (5) of said first semiconductor
+ material in said substrate (1; 1'), said buried layer
+ (5) having an upper surface (105) and a lower surface
+ (105) and dividing said substrate (1; 1') into an upper
+ part (1a) and a lower part (1b; 1b', 1c); creating a
+ buried damage layer (10; 10'; 10'', 100'') which at
+ least partly adjoins and/or at least partly includes
+ said upper surface (105) of said buried layer (5); and
+ removing said upper part (1a) of said substrate (1; 1')
+ and said buried damage layer (10; 10'; 10'', 100'') for
+ exposing said buried layer (5). The invention also
+ provides a corresponding layered semiconductor
+ structure.",
+}