title = "First-principles and empirical potential simulation
study of intrinsic and carbon-related defects in
silicon",
title = "First-principles and empirical potential simulation
study of intrinsic and carbon-related defects in
silicon",
found in SiC growth processes. A possible precipitation
mechanism, which conforms well to experimental findings
and clarifies contradictory views present in the
found in SiC growth processes. A possible precipitation
mechanism, which conforms well to experimental findings
and clarifies contradictory views present in the