now starting ssmbe

[lectures/latex.git] / bibdb / bibdb.bib

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index 6ec5213..97c81b8 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -1500,6 +1500,33 @@
   author =       "W. Wesch",
 }
 
+@Article{davis91,
+  author =       "R. F. Davis and G. Kelner and M. Shur and J. W.
+                 Palmour and J. A. Edmond",
+  journal =      "Proceedings of the IEEE",
+  title =        "Thin film deposition and microelectronic and
+                 optoelectronic device fabrication and characterization
+                 in monocrystalline alpha and beta silicon carbide",
+  year =         "1991",
+  month =        may,
+  volume =       "79",
+  number =       "5",
+  pages =        "677--701",
+  keywords =     "HBT;LED;MESFET;MOSFET;Schottky contacts;Schottky
+                 diode;SiC;dry etching;electrical
+                 contacts;etching;impurity incorporation;optoelectronic
+                 device fabrication;solid-state devices;surface
+                 chemistry;Schottky effect;Schottky gate field effect
+                 transistors;Schottky-barrier
+                 diodes;etching;heterojunction bipolar
+                 transistors;insulated gate field effect
+                 transistors;light emitting diodes;semiconductor
+                 materials;semiconductor thin films;silicon compounds;",
+  doi =          "10.1109/5.90132",
+  ISSN =         "0018-9219",
+  notes =        "sic growth methods",
+}
+
 @Article{morkoc94,
   author =       "H. Morko\c{c} and S. Strite and G. B. Gao and M. E.
                  Lin and B. Sverdlov and M. Burns",
@@ -3844,3 +3871,39 @@
   notes =        "3c-sic metastable, 3c-sic preferred growth, sic
                  polytype dft calculation refs",
 }
+
+@Article{allendorf91,
+  title =        "The adsorption of {H}-atoms on polycrystalline
+                 [beta]-silicon carbide",
+  journal =      "Surface Science",
+  volume =       "258",
+  number =       "1-3",
+  pages =        "177--189",
+  year =         "1991",
+  note =         "",
+  ISSN =         "0039-6028",
+  doi =          "DOI: 10.1016/0039-6028(91)90912-C",
+  URL =          "http://www.sciencedirect.com/science/article/B6TVX-46T3BSB-24V/2/534f1f4786088ceb88b6d31eccb096b3",
+  author =       "Mark D. Allendorf and Duane A. Outka",
+  notes =        "h adsorption on 3c-sic",
+}
+
+@Article{eaglesham93,
+  author =       "D. J. Eaglesham and F. C. Unterwald and H. Luftman and
+                 D. P. Adams and S. M. Yalisove",
+  collaboration = "",
+  title =        "Effect of {H} on Si molecular-beam epitaxy",
+  publisher =    "AIP",
+  year =         "1993",
+  journal =      "Journal of Applied Physics",
+  volume =       "74",
+  number =       "11",
+  pages =        "6615--6618",
+  keywords =     "SILICON; MOLECULAR BEAM EPITAXY; HYDROGEN; SURFACE
+                 CONTAMINATION; SIMS; SEGREGATION; IMPURITIES;
+                 DIFFUSION; ADSORPTION",
+  URL =          "http://link.aip.org/link/?JAP/74/6615/1",
+  doi =          "10.1063/1.355101",
+  notes =        "h incorporation on si surface, lower surface
+                 mobility",
+}