notes = "3c-sic on 6h-sic, cvd, reduced temperature",
}
+@Article{kaneda87,
+ title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
+ properties of its p-n junction",
+ journal = "Journal of Crystal Growth",
+ volume = "81",
+ number = "1-4",
+ pages = "536--542",
+ year = "1987",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(87)90449-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46X9W77-3F/2/864b2d86faa794252e1d1f16c99a9cf1",
+ author = "Shigeo Kaneda and Yoshiki Sakamoto and Tadashi Mihara
+ and Takao Tanaka",
+ notes = "first time ssmbe of 3c-sic on 6h-sic",
+}
+
@Article{fissel95,
title = "Epitaxial growth of Si{C} thin films on Si-stabilized
[alpha]-Si{C}(0001) at low temperatures by solid-source
ideas",
}
+@Article{edelman76,
+ author = "F. L. Edelman and O. N. Kuznetsov and L. V. Lezheiko
+ and E. V. Lubopytova",
+ title = "Formation of Si{C} and Si[sub 3]{N}[sub 4] in silicon
+ by ion implantation",
+ publisher = "Taylor \& Francis",
+ year = "1976",
+ journal = "Radiation Effects",
+ volume = "29",
+ number = "1",
+ pages = "13--15",
+ URL = "http://www.informaworld.com/10.1080/00337577608233477",
+ notes = "3c-sic for different temperatures, amorphous, poly,
+ single crystalline",
+}
+
+@Article{akimchenko80,
+ author = "I. P. Akimchenko and K. V. Kisseleva and V. V.
+ Krasnopevtsev and A. G. Touryanski and V. S. Vavilov",
+ title = "Structure and optical properties of silicon implanted
+ by high doses of 70 and 310 ke{V} carbon ions",
+ publisher = "Taylor \& Francis",
+ year = "1980",
+ journal = "Radiation Effects",
+ volume = "48",
+ number = "1",
+ pages = "7",
+ URL = "http://www.informaworld.com/10.1080/00337578008209220",
+ notes = "3c-sic nucleation by thermal spikes",
+}
+
+@Article{kimura81,
+ title = "Structure and annealing properties of silicon carbide
+ thin layers formed by implantation of carbon ions in
+ silicon",
+ journal = "Thin Solid Films",
+ volume = "81",
+ number = "4",
+ pages = "319--327",
+ year = "1981",
+ note = "",
+ ISSN = "0040-6090",
+ doi = "DOI: 10.1016/0040-6090(81)90516-2",
+ URL = "http://www.sciencedirect.com/science/article/B6TW0-46T3DRB-NS/2/831f8ddd769a5d64cd493b89a9b0cf80",
+ author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
+ Yugo",
+}
+
+@Article{kimura82,
+ title = "Characteristics of the synthesis of [beta]-Si{C} by
+ the implantation of carbon ions into silicon",
+ journal = "Thin Solid Films",
+ volume = "94",
+ number = "3",
+ pages = "191--198",
+ year = "1982",
+ note = "",
+ ISSN = "0040-6090",
+ doi = "DOI: 10.1016/0040-6090(82)90295-4",
+ URL = "http://www.sciencedirect.com/science/article/B6TW0-46PB24G-11C/2/6bc025812640087a987ae09c38faaecd",
+ author = "Tadamasa Kimura and Shigeru Kagiyama and Shigemi
+ Yugo",
+}
+
+@Article{reeson86,
+ author = "K. J. Reeson and P. L. F. Hemment and R. F. Peart and
+ C. D. Meekison and C. Marsh and G. R. Booker and R. J.
+ Chater and J. A. Iulner and J. Davis",
+ title = "Formation mechanisms and structures of insulating
+ compounds formed in silicon by ion beam synthesis",
+ publisher = "Taylor \& Francis",
+ year = "1986",
+ journal = "Radiation Effects",
+ volume = "99",
+ number = "1",
+ pages = "71--81",
+ URL = "http://www.informaworld.com/10.1080/00337578608209614",
+ notes = "ibs, comparison with sio and sin, higher temp or
+ time",
+}
+
@Article{reeson87,
author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
J. Davis and G. E. Celler",
notes = "nice tem images, sic by ibs",
}
+@Article{martin90,
+ author = "P. Martin and B. Daudin and M. Dupuy and A. Ermolieff
+ and M. Olivier and A. M. Papon and G. Rolland",
+ collaboration = "",
+ title = "High-temperature ion beam synthesis of cubic Si{C}",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Journal of Applied Physics",
+ volume = "67",
+ number = "6",
+ pages = "2908--2912",
+ keywords = "SILICON CARBIDES; SYNTHESIS; CUBIC LATTICES; ION
+ IMPLANTATION; SILICON; SUBSTRATES; CARBON IONS;
+ TRANSMISSION ELECTRON MICROSCOPY; XRAY DIFFRACTION;
+ INFRARED SPECTRA; ABSORPTION SPECTROSCOPY; AUGER
+ ELECTRON SPECTROSCOPY; RBS; CHANNELING; NUCLEAR
+ REACTIONS; MONOCRYSTALS",
+ URL = "http://link.aip.org/link/?JAP/67/2908/1",
+ doi = "10.1063/1.346092",
+ notes = "triple energy implantation to overcome high annealing
+ temepratures",
+}
+
@Article{scace59,
author = "R. I. Scace and G. A. Slack",
collaboration = "",
ENERGY",
URL = "http://link.aip.org/link/?APL/62/3336/1",
doi = "10.1063/1.109063",
- notes = "interfacial energy of cubic sic and si",
+ notes = "interfacial energy of cubic sic and si, si self
+ interstitials necessary for precipitation, volume
+ decrease, high interface energy",
}
@Article{chaussende08,
notes = "h incorporation on si surface, lower surface
mobility",
}
+
+@Article{newman85,
+ author = "Ronald C. Newman",
+ title = "Carbon in Crystalline Silicon",
+ journal = "MRS Online Proceedings Library",
+ volume = "59",
+ number = "",
+ pages = "403",
+ year = "1985",
+ doi = "10.1557/PROC-59-403",
+ URL = "http://dx.doi.org/10.1557/PROC-59-403",
+ eprint = "http://journals.cambridge.org/article_S194642740054367X",
+}
+
+@Article{goesele85,
+ author = "U. Gösele",
+ title = "The Role of Carbon and Point Defects in Silicon",
+ journal = "MRS Online Proceedings Library",
+ volume = "59",
+ number = "",
+ pages = "419",
+ year = "1985",
+ doi = "10.1557/PROC-59-419",
+ URL = "http://dx.doi.org/10.1557/PROC-59-419",
+ eprint = "http://journals.cambridge.org/article_S1946427400543681",
+}
projects / lectures / latex.git / blobdiff