notes = "derivation of albe bond order formalism",
}
+@Article{capano97,
+ author = "M. A. Capano and R. J. Trew",
+ title = "Silicon Carbide Electronic Materials and Devices",
+ journal = "MRS Bull.",
+ volume = "22",
+ pages = "19",
+ year = "1997",
+}
+
@Book{laplace,
author = "P. S. de Laplace",
title = "Th\'eorie analytique des probabilit\'es",
notes = "virial derivation for 3-body tersoff potential",
}
+@Book{park98,
+ author = "Y. S. Park",
+ title = "Si{C} Materials and Devices",
+ publisher = "Academic Press",
+ address = "San Diego",
+ year = "1998",
+}
+
+@Article{tsvetkov98,
+ author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
+ Calvin H. Carter Jr. and D. Asbury",
+ title = "Si{C} Seeded Boule Growth",
+ journal = "Materials Science Forum",
+ volume = "264-268",
+ pages = "3--8",
+ year = "1998",
+ notes = "modified lely process, micropipes",
+}
+
@Article{verlet67,
title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
Thermodynamical Properties of Lennard-Jones Molecules",
@Article{batra87,
title = "Molecular-dynamics study of self-interstitials in
silicon",
- author = "S. Ciraci {Inder P. Batra, Farid F. Abraham}",
+ author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
journal = "Phys. Rev. B",
volume = "35",
number = "18",
month = jul,
doi = "10.1103/PhysRevB.66.024106",
publisher = "American Physical Society",
- note = "sic intro, si cascade in 3c-sic, amorphization,
+ notes = "sic intro, si cascade in 3c-sic, amorphization,
tersoff modified, pair correlation of amorphous sic, md
result analyze",
}
number = "1-4",
pages = "118--122",
year = "1998",
- note = "",
ISSN = "0168-583X",
doi = "DOI: 10.1016/S0168-583X(98)00084-6",
author = "R. Devanathan and W. J. Weber and T. Diaz de la
Tight-binding molecular dynamics studies of
self-diffusion, interstitial-vacancy recombination, and
formation volumes",
- author = "T. Diaz de la Rubia {M. Tang, L. Colombo, J. Zhu}",
+ author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
+ Rubia",
journal = "Phys. Rev. B",
volume = "55",
number = "21",
@Article{gao2001,
title = "Ab initio and empirical-potential studies of defect
properties in $3{C}-Si{C}$",
- author = "L. R. Corrales {F. Gao, E. J. Bylaska, W. J. Weber}",
+ author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
+ Corrales",
journal = "Phys. Rev. B",
volume = "64",
number = "24",
@Article{capazd94,
title = "Identification of the migration path of interstitial
carbon in silicon",
- author = "J. D. Joannopoulos {R. B. Capazd, A Dal Pino}",
+ author = "R. B. Capazd and A. Dal Pino and J. D. Joannopoulos",
journal = "Phys. Rev. B",
volume = "50",
number = "11",
@Article{laveant2002,
title = "Epitaxy of carbon-rich silicon with {MBE}",
- author = "U. Gosele {P. Laveant, G. Gerth, P. Werner}",
+ author = "P. Laveant and G. Gerth and P. Werner and U.
+ G{\"o}sele",
journal = "Materials Science and Engineering B",
volume = "89",
number = "1-3",
stress, avoid sic precipitation",
}
-}
-
@Article{werner97,
author = "P. Werner and S. Eichler and G. Mariani and R.
K{\"{o}}gler and W. Skorupa",
@Article{zirkelbach2007,
title = "Monte Carlo simulation study of a selforganisation
process leading to ordered precipitate structures",
- author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
- Lindner}",
+ author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
+ and B. Stritzker",
journal = "Nucl. Instr. and Meth. B",
volume = "257",
number = "1--2",
title = "Monte-Carlo simulation study of the self-organization
of nanometric amorphous precipitates in regular arrays
during ion irradiation",
- author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
- Lindner}",
+ author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
+ and B. Stritzker",
journal = "Nucl. Instr. and Meth. B",
volume = "242",
number = "1--2",
title = "Modelling of a selforganization process leading to
periodic arrays of nanometric amorphous precipitates by
ion irradiation",
- author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
- Lindner}",
+ author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
+ and B. Stritzker",
journal = "Comp. Mater. Sci.",
volume = "33",
number = "1--3",
NETHERLANDS",
}
+@Article{lindner99,
+ title = "Controlling the density distribution of Si{C}
+ nanocrystals for the ion beam synthesis of buried Si{C}
+ layers in silicon",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "147",
+ number = "1-4",
+ pages = "249--255",
+ year = "1999",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(98)00598-9",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
+ author = "J. K. N. Lindner and B. Stritzker",
+ notes = "two-step implantation process",
+}
+
+@Article{lindner99_2,
+ title = "Mechanisms in the ion beam synthesis of Si{C} layers
+ in silicon",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "148",
+ number = "1-4",
+ pages = "528--533",
+ year = "1999",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(98)00787-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
+ author = "J. K. N. Lindner and B. Stritzker",
+}
+
+@Article{lindner01,
+ title = "Ion beam synthesis of buried Si{C} layers in silicon:
+ Basic physical processes",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "178",
+ number = "1-4",
+ pages = "44--54",
+ year = "2001",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(01)00504-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
+ author = "Jörg K. N. Lindner",
+}
+
@Article{lindner02,
title = "High-dose carbon implantations into silicon:
fundamental studies for new technological tricks",
URL = "http://link.aip.org/link/?JAP/76/1363/1",
doi = "10.1063/1.358463",
}
+
+@Article{foo,
+ author = "Noch Unbekannt",
+ title = "How to find references",
+ journal = "Journal of Applied References",
+ year = "2009",
+ volume = "77",
+ pages = "1--23",
+}
+
+@Article{tang95,
+ title = "Atomistic simulation of thermomechanical properties of
+ \beta{}-Si{C}",
+ author = "Meijie Tang and Sidney Yip",
+ journal = "Phys. Rev. B",
+ volume = "52",
+ number = "21",
+ pages = "15150--15159",
+ numpages = "9",
+ year = "1995",
+ month = dec,
+ doi = "10.1103/PhysRevB.52.15150",
+ notes = "modified tersoff, scale cutoff with volume",
+ publisher = "American Physical Society",
+}
+
+@Article{sarro00,
+ title = "Silicon carbide as a new {MEMS} technology",
+ journal = "Sensors and Actuators A: Physical",
+ volume = "82",
+ number = "1-3",
+ pages = "210--218",
+ year = "2000",
+ ISSN = "0924-4247",
+ doi = "DOI: 10.1016/S0924-4247(99)00335-0",
+ URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
+ author = "Pasqualina M. Sarro",
+ keywords = "MEMS",
+ keywords = "Silicon carbide",
+ keywords = "Micromachining",
+ keywords = "Mechanical stress",
+}
+
+@Article{casady96,
+ title = "Status of silicon carbide (Si{C}) as a wide-bandgap
+ semiconductor for high-temperature applications: {A}
+ review",
+ journal = "Solid-State Electronics",
+ volume = "39",
+ number = "10",
+ pages = "1409--1422",
+ year = "1996",
+ ISSN = "0038-1101",
+ doi = "DOI: 10.1016/0038-1101(96)00045-7",
+ URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
+ author = "J. B. Casady and R. W. Johnson",
+}
+
+@Article{giancarli98,
+ title = "Design requirements for Si{C}/Si{C} composites
+ structural material in fusion power reactor blankets",
+ journal = "Fusion Engineering and Design",
+ volume = "41",
+ number = "1-4",
+ pages = "165--171",
+ year = "1998",
+ ISSN = "0920-3796",
+ doi = "DOI: 10.1016/S0920-3796(97)00200-7",
+ URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
+ author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
+ Marois and N. B. Morley and J. F. Salavy",
+}
+
+@Article{pensl93,
+ title = "Electrical and optical characterization of Si{C}",
+ journal = "Physica B: Condensed Matter",
+ volume = "185",
+ number = "1-4",
+ pages = "264--283",
+ year = "1993",
+ ISSN = "0921-4526",
+ doi = "DOI: 10.1016/0921-4526(93)90249-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
+ author = "G. Pensl and W. J. Choyke",
+}
+
+@Article{tairov78,
+ title = "Investigation of growth processes of ingots of silicon
+ carbide single crystals",
+ journal = "Journal of Crystal Growth",
+ volume = "43",
+ number = "2",
+ pages = "209--212",
+ year = "1978",
+ notes = "modifief lely process",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(78)90169-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
+ author = "Yu. M. Tairov and V. F. Tsvetkov",
+}
+
+@Article{powell87,
+ author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
+ Kuczmarski",
+ title = "Growth and Characterization of Cubic Si{C}
+ Single-Crystal Films on Si",
+ publisher = "ECS",
+ year = "1987",
+ journal = "Journal of The Electrochemical Society",
+ volume = "134",
+ number = "6",
+ pages = "1558--1565",
+ keywords = "semiconductor materials; silicon compounds; carbon
+ compounds; crystal morphology; electron mobility",
+ URL = "http://link.aip.org/link/?JES/134/1558/1",
+ doi = "10.1149/1.2100708",
+ notes = "blue light emitting diodes (led)",
+}
+
+@Article{kimoto93,
+ author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
+ and Hiroyuki Matsunami",
+ title = "Growth mechanism of 6{H}-Si{C} in step-controlled
+ epitaxy",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Journal of Applied Physics",
+ volume = "73",
+ number = "2",
+ pages = "726--732",
+ keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
+ RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
+ VAPOR DEPOSITION",
+ URL = "http://link.aip.org/link/?JAP/73/726/1",
+ doi = "10.1063/1.353329",
+}
+
+@Article{powell90,
+ author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
+ J. Choyke and J. L. Bradshaw and L. Henderson and M.
+ Yoganathan and J. Yang and P. Pirouz",
+ collaboration = "",
+ title = "Growth of improved quality 3{C}-Si{C} films on
+ 6{H}-Si{C} substrates",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Applied Physics Letters",
+ volume = "56",
+ number = "14",
+ pages = "1353--1355",
+ keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
+ PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
+ MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
+ PHASE EPITAXY",
+ URL = "http://link.aip.org/link/?APL/56/1353/1",
+ doi = "10.1063/1.102512",
+}
+
+@Article{fissel95,
+ title = "Epitaxial growth of Si{C} thin films on Si-stabilized
+ [alpha]-Si{C}(0001) at low temperatures by solid-source
+ molecular beam epitaxy",
+ journal = "Journal of Crystal Growth",
+ volume = "154",
+ number = "1-2",
+ pages = "72--80",
+ year = "1995",
+ notes = "solid source mbe",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(95)00170-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
+ author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
+ and W. Richter",
+}
+
+@Article{borders71,
+ author = "J. A. Borders and S. T. Picraux and W. Beezhold",
+ collaboration = "",
+ title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
+ {IMPLANTATION}",
+ publisher = "AIP",
+ year = "1971",
+ journal = "Applied Physics Letters",
+ volume = "18",
+ number = "11",
+ pages = "509--511",
+ URL = "http://link.aip.org/link/?APL/18/509/1",
+ notes = "first time sic by ibs",
+ doi = "10.1063/1.1653516",
+}
+
+@Article{reeson87,
+ author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
+ J. Davis and G. E. Celler",
+ collaboration = "",
+ title = "Formation of buried layers of beta-Si{C} using ion
+ beam synthesis and incoherent lamp annealing",
+ publisher = "AIP",
+ year = "1987",
+ journal = "Applied Physics Letters",
+ volume = "51",
+ number = "26",
+ pages = "2242--2244",
+ keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
+ IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
+ URL = "http://link.aip.org/link/?APL/51/2242/1",
+ doi = "10.1063/1.98953",
+ notes = "nice tem images, sic by ibs",
+}
+
+@Article{scace59,
+ author = "R. I. Scace and G. A. Slack",
+ collaboration = "",
+ title = "Solubility of Carbon in Silicon and Germanium",
+ publisher = "AIP",
+ year = "1959",
+ journal = "The Journal of Chemical Physics",
+ volume = "30",
+ number = "6",
+ pages = "1551--1555",
+ URL = "http://link.aip.org/link/?JCP/30/1551/1",
+ doi = "10.1063/1.1730236",
+ notes = "solubility of c in c-si",
+}
+
+@Article{cowern96,
+ author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
+ F. W. Saris and W. Vandervorst",
+ collaboration = "",
+ title = "Role of {C} and {B} clusters in transient diffusion of
+ {B} in silicon",
+ publisher = "AIP",
+ year = "1996",
+ journal = "Applied Physics Letters",
+ volume = "68",
+ number = "8",
+ pages = "1150--1152",
+ keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
+ DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
+ SILICON",
+ URL = "http://link.aip.org/link/?APL/68/1150/1",
+ doi = "10.1063/1.115706",
+ notes = "suppression of transient enhanced diffusion (ted)",
+}
+
+@Article{stolk95,
+ title = "Implantation and transient boron diffusion: the role
+ of the silicon self-interstitial",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "96",
+ number = "1-2",
+ pages = "187--195",
+ year = "1995",
+ note = "Selected Papers of the Tenth International Conference
+ on Ion Implantation Technology (IIT '94)",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/0168-583X(94)00481-1",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
+ author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
+ and J. M. Poate",
+}
projects / lectures / latex.git / blobdiff