new stuff on gsmbe
[lectures/latex.git] / bibdb / bibdb.bib
index 25d9dcd..a5bb8bd 100644 (file)
   notes =        "ssmbe of sic on si, lower temperatures",
 }
 
+@Article{fuyuki89,
+  title =        "Atomic layer epitaxy of cubic Si{C} by gas source
+                 {MBE} using surface superstructure",
+  journal =      "Journal of Crystal Growth",
+  volume =       "95",
+  number =       "1-4",
+  pages =        "461--463",
+  year =         "1989",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(89)90442-9",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-46DFS6F-GF/2/a8e0abaef892c6d96992ff4751fdeda2",
+  author =       "Takashi Fuyuki and Michiaki Nakayama and Tatsuo
+                 Yoshinobu and Hiromu Shiomi and Hiroyuki Matsunami",
+  notes =        "gas source mbe of 3c-sic on 6h-sic",
+}
+
+@Article{yoshinobu92,
+  author =       "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa
+                 and Takashi Fuyuki and Hiroyuki Matsunami",
+  collaboration = "",
+  title =        "Lattice-matched epitaxial growth of single crystalline
+                 3{C}-Si{C} on 6{H}-Si{C} substrates by gas source
+                 molecular beam epitaxy",
+  publisher =    "AIP",
+  year =         "1992",
+  journal =      "Applied Physics Letters",
+  volume =       "60",
+  number =       "7",
+  pages =        "824--826",
+  keywords =     "SILICON CARBIDES; HOMOJUNCTIONS; MOLECULAR BEAM
+                 EPITAXY; TWINNING; RHEED; TEMPERATURE EFFECTS;
+                 INTERFACE STRUCTURE",
+  URL =          "http://link.aip.org/link/?APL/60/824/1",
+  doi =          "10.1063/1.107430",
+  notes =        "gas source mbe of 3c-sic on 6h-sic",
+}
+
+@Article{yoshinobu90,
+  title =        "Atomic level control in gas source {MBE} growth of
+                 cubic Si{C}",
+  journal =      "Journal of Crystal Growth",
+  volume =       "99",
+  number =       "1-4",
+  pages =        "520--524",
+  year =         "1990",
+  note =         "",
+  ISSN =         "0022-0248",
+  doi =          "DOI: 10.1016/0022-0248(90)90575-6",
+  URL =          "http://www.sciencedirect.com/science/article/B6TJ6-46YKT9W-HY/2/04dd57af2f42ee620895844e480a2736",
+  author =       "Tatsuo Yoshinobu and Michiaki Nakayama and Hiromu
+                 Shiomi and Takashi Fuyuki and Hiroyuki Matsunami",
+  notes =        "gas source mbe of 3c-sic on 3c-sic",
+}
+
+@Article{fuyuki93,
+  title =        "Atomic layer epitaxy controlled by surface
+                 superstructures in Si{C}",
+  journal =      "Thin Solid Films",
+  volume =       "225",
+  number =       "1-2",
+  pages =        "225--229",
+  year =         "1993",
+  note =         "",
+  ISSN =         "0040-6090",
+  doi =          "DOI: 10.1016/0040-6090(93)90159-M",
+  URL =          "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-40/2/c9675e1d8c4bcebc7ce7d06e44e14f1f",
+  author =       "Takashi Fuyuki and Tatsuo Yoshinobu and Hiroyuki
+                 Matsunami",
+  notes =        "gas source mbe of 3c-sic on 3c-sic, atomic layer
+                 epitaxy, ale",
+}
+
+@Article{hara93,
+  title =        "Microscopic mechanisms of accurate layer-by-layer
+                 growth of [beta]-Si{C}",
+  journal =      "Thin Solid Films",
+  volume =       "225",
+  number =       "1-2",
+  pages =        "240--243",
+  year =         "1993",
+  note =         "",
+  ISSN =         "0040-6090",
+  doi =          "DOI: 10.1016/0040-6090(93)90162-I",
+  URL =          "http://www.sciencedirect.com/science/article/B6TW0-46NY79X-43/2/18694bfe0e75b1f29a3cf5f90d19987c",
+  author =       "Shiro Hara and T. Meguro and Y. Aoyagi and M. Kawai
+                 and S. Misawa and E. Sakuma and S. Yoshida",
+  notes =        "gas source mbe of 3c-sic on 3c-sic, atomic layer
+                 epitaxy, ale",
+}
+
+@Article{tanaka94,
+  author =       "Satoru Tanaka and R. Scott Kern and Robert F. Davis",
+  collaboration = "",
+  title =        "Effects of gas flow ratio on silicon carbide thin film
+                 growth mode and polytype formation during gas-source
+                 molecular beam epitaxy",
+  publisher =    "AIP",
+  year =         "1994",
+  journal =      "Applied Physics Letters",
+  volume =       "65",
+  number =       "22",
+  pages =        "2851--2853",
+  keywords =     "SILICON CARBIDES; MOLECULAR BEAM EPITAXY; RHEED;
+                 TRANSMISSION ELECTRON MICROSCOPY; MORPHOLOGY;
+                 NUCLEATION; COALESCENCE; SURFACE RECONSTRUCTION; GAS
+                 FLOW; FLOW RATE",
+  URL =          "http://link.aip.org/link/?APL/65/2851/1",
+  doi =          "10.1063/1.112513",
+  notes =        "gas source mbe of 6h-sic on 6h-sic",
+}
+
 @Article{fuyuki97,
   author =       "T. Fuyuki and T. Hatayama and H. Matsunami",
   title =        "Heterointerface Control and Epitaxial Growth of