author = "G. R. Fisher and P. Barnes",
title = "Towards a unified view of polytypism in silicon
carbide",
- journal = "Philosophical Magazine Part B",
+ journal = "Philos. Mag. B",
volume = "61",
pages = "217--236",
year = "1990",
title = "Synthesis of nano-sized Si{C} precipitates in Si by
simultaneous dual-beam implantation of {C}+ and Si+
ions",
- journal = "Applied Physics A: Materials Science \& Processing",
+ journal = "Appl. Phys. A: Mater. Sci. Process.",
volume = "76",
pages = "827--835",
month = mar,
title = "Molecular dynamics with coupling to an external bath",
publisher = "AIP",
year = "1984",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "81",
number = "8",
pages = "3684--3690",
title = "Molecular dynamics determination of defect energetics
in beta -Si{C} using three representative empirical
potentials",
- journal = "Modelling and Simulation in Materials Science and
- Engineering",
+ journal = "Modell. Simul. Mater. Sci. Eng.",
volume = "3",
number = "5",
pages = "615--627",
@Article{devanathan98,
title = "Computer simulation of a 10 ke{V} Si displacement
cascade in Si{C}",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "141",
number = "1-4",
pages = "118--122",
@Article{devanathan98_2,
title = "Displacement threshold energies in [beta]-Si{C}",
- journal = "Journal of Nuclear Materials",
+ journal = "J. Nucl. Mater.",
volume = "253",
number = "1-3",
pages = "47--52",
presence of carbon and boron",
publisher = "AIP",
year = "1998",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "84",
number = "4",
pages = "1963--1967",
publisher = "American Physical Society",
}
+@Article{bloechl93,
+ title = "First-principles calculations of self-diffusion
+ constants in silicon",
+ author = "Peter E. Bl{\"o}chl and Enrico Smargiassi and R. Car
+ and D. B. Laks and W. Andreoni and S. T. Pantelides",
+ journal = "Phys. Rev. Lett.",
+ volume = "70",
+ number = "16",
+ pages = "2435--2438",
+ numpages = "3",
+ year = "1993",
+ month = apr,
+ doi = "10.1103/PhysRevLett.70.2435",
+ publisher = "American Physical Society",
+ notes = "si self int diffusion by ab initio md, formation
+ entropy calculations",
+}
+
@Article{colombo02,
title = "Tight-binding theory of native point defects in
silicon",
silicon, si self interstitials, free energy",
}
+@Article{goedecker02,
+ title = "A Fourfold Coordinated Point Defect in Silicon",
+ author = "Stefan Goedecker and Thierry Deutsch and Luc Billard",
+ journal = "Phys. Rev. Lett.",
+ volume = "88",
+ number = "23",
+ pages = "235501",
+ numpages = "4",
+ year = "2002",
+ month = may,
+ doi = "10.1103/PhysRevLett.88.235501",
+ publisher = "American Physical Society",
+ notes = "first time ffcd, fourfold coordinated point defect in
+ silicon",
+}
+
+@Article{sahli05,
+ title = "Ab initio molecular dynamics simulation of
+ self-interstitial diffusion in silicon",
+ author = "Beat Sahli and Wolfgang Fichtner",
+ journal = "Phys. Rev. B",
+ volume = "72",
+ number = "24",
+ pages = "245210",
+ numpages = "6",
+ year = "2005",
+ month = dec,
+ doi = "10.1103/PhysRevB.72.245210",
+ publisher = "American Physical Society",
+ notes = "si self int, diffusion, barrier height, voronoi
+ mapping applied",
+}
+
+@Article{hobler05,
+ title = "Ab initio calculations of the interaction between
+ native point defects in silicon",
+ journal = "Mater. Sci. Eng., B",
+ volume = "124-125",
+ number = "",
+ pages = "368--371",
+ year = "2005",
+ note = "EMRS 2005, Symposium D - Materials Science and Device
+ Issues for Future Technologies",
+ ISSN = "0921-5107",
+ doi = "DOI: 10.1016/j.mseb.2005.08.072",
+ URL = "http://www.sciencedirect.com/science/article/B6TXF-4H6PKRB-3/2/e217bd3d7ee1fffee899eeb4a2f133a4",
+ author = "G. Hobler and G. Kresse",
+ notes = "vasp intrinsic si defect interaction study, capture
+ radius",
+}
+
@Article{ma10,
title = "Ab initio study of self-diffusion in silicon over a
wide temperature range: Point defect states and
@Article{gao02,
title = "Empirical potential approach for defect properties in
3{C}-Si{C}",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "191",
number = "1-4",
- pages = "504--508",
+ pages = "487--496",
year = "2002",
note = "",
ISSN = "0168-583X",
in cubic silicon carbide",
publisher = "AIP",
year = "2007",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "90",
number = "22",
eid = "221915",
month = oct,
doi = "10.1103/PhysRevB.58.9845",
publisher = "American Physical Society",
- notes = "carbon pairs in si",
+ notes = "c_i c_s pair configuration, theoretical results",
+}
+
+@Article{song90_2,
+ title = "Bistable interstitial-carbon--substitutional-carbon
+ pair in silicon",
+ author = "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
+ Watkins",
+ journal = "Phys. Rev. B",
+ volume = "42",
+ number = "9",
+ pages = "5765--5783",
+ numpages = "18",
+ year = "1990",
+ month = sep,
+ doi = "10.1103/PhysRevB.42.5765",
+ publisher = "American Physical Society",
+ notes = "c_i c_s pair configuration, experimental results",
+}
+
+@Article{liu02,
+ author = "Chun-Li Liu and Wolfgang Windl and Len Borucki and
+ Shifeng Lu and Xiang-Yang Liu",
+ collaboration = "",
+ title = "Ab initio modeling and experimental study of {C}--{B}
+ interactions in Si",
+ publisher = "AIP",
+ year = "2002",
+ journal = "Appl. Phys. Lett.",
+ volume = "80",
+ number = "1",
+ pages = "52--54",
+ keywords = "silicon; boron; carbon; elemental semiconductors;
+ impurity-defect interactions; ab initio calculations;
+ secondary ion mass spectra; diffusion; interstitials",
+ URL = "http://link.aip.org/link/?APL/80/52/1",
+ doi = "10.1063/1.1430505",
+ notes = "c-c 100 split, lower as a and b states of capaz",
}
@Article{dal_pino93,
author = "A K Tipping and R C Newman",
title = "The diffusion coefficient of interstitial carbon in
silicon",
- journal = "Semiconductor Science and Technology",
+ journal = "Semicond. Sci. Technol.",
volume = "2",
number = "5",
pages = "315--317",
@Article{laveant2002,
title = "Epitaxy of carbon-rich silicon with {MBE}",
- journal = "Materials Science and Engineering B",
+ journal = "Mater. Sci. Eng., B",
volume = "89",
number = "1-3",
pages = "241--245",
silicon by transmission electron microscopy",
publisher = "AIP",
year = "1997",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "70",
number = "2",
pages = "252--254",
volume = "",
number = "",
pages = "675--678",
- keywords = "beta;-SiC precipitates;30 s;700 to 1300 C;C
- atom/radiation induced defect interaction;C depth
- distribution;C precipitation;C-Si defects;C-Si
- dimers;CZ Si;HREM;Si:C;TEM;buried layer morphology;high
- energy ion implantation;ion implantation;metastable
- agglomerates;microdefects;positron annihilation
- spectroscopy;rapid thermal annealing;secondary ion mass
- spectrometry;vacancy clusters;buried
- layers;carbon;elemental semiconductors;impurity-defect
- interactions;ion implantation;positron
- annihilation;precipitation;rapid thermal
- annealing;secondary ion mass
- spectra;silicon;transmission electron
- microscopy;vacancies (crystal);",
doi = "10.1109/IIT.1996.586497",
ISSN = "",
notes = "c-si agglomerates dumbbells",
}
+@Article{werner98,
+ author = "P. Werner and U. G{\"{o}}sele and H.-J. Gossmann and
+ D. C. Jacobson",
+ collaboration = "",
+ title = "Carbon diffusion in silicon",
+ publisher = "AIP",
+ year = "1998",
+ journal = "Appl. Phys. Lett.",
+ volume = "73",
+ number = "17",
+ pages = "2465--2467",
+ keywords = "silicon; carbon; elemental semiconductors; diffusion;
+ secondary ion mass spectra; semiconductor epitaxial
+ layers; annealing; impurity-defect interactions;
+ impurity distribution",
+ URL = "http://link.aip.org/link/?APL/73/2465/1",
+ doi = "10.1063/1.122483",
+ notes = "c diffusion in si, kick out mechnism",
+}
+
@Article{strane94,
author = "J. W. Strane and H. J. Stein and S. R. Lee and S. T.
Picraux and J. K. Watanabe and J. W. Mayer",
y]{C}[sub y]/Si heterostructures",
publisher = "AIP",
year = "1994",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "76",
number = "6",
pages = "3656--3668",
strained Si[sub 1 - y]{C}[sub y] /Si heterostructures",
publisher = "AIP",
year = "1995",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "77",
number = "5",
pages = "1934--1937",
NETHERLANDS",
}
+@Article{zirkelbach09,
+ title = "Molecular dynamics simulation of defect formation and
+ precipitation in heavily carbon doped silicon",
+ journal = "Mater. Sci. Eng., B",
+ volume = "159-160",
+ number = "",
+ pages = "149--152",
+ year = "2009",
+ note = "EMRS 2008 Spring Conference Symposium K: Advanced
+ Silicon Materials Research for Electronic and
+ Photovoltaic Applications",
+ ISSN = "0921-5107",
+ doi = "DOI: 10.1016/j.mseb.2008.10.010",
+ URL = "http://www.sciencedirect.com/science/article/B6TXF-4TX1547-2/2/cb9f4921f324735087020ccce7843e39",
+ author = "F. Zirkelbach and J. K. N. Lindner and K. Nordlund and
+ B. Stritzker",
+ keywords = "Silicon",
+ keywords = "Carbon",
+ keywords = "Silicon carbide",
+ keywords = "Nucleation",
+ keywords = "Defect formation",
+ keywords = "Molecular dynamics simulations",
+}
+
+@Article{zirkelbach10a,
+ title = "Defects in carbon implanted silicon calculated by
+ classical potentials and first-principles methods",
+ author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
+ K. N. Lindner and W. G. Schmidt and E. Rauls",
+ journal = "Phys. Rev. B",
+ volume = "82",
+ number = "9",
+ pages = "094110",
+ numpages = "6",
+ year = "2010",
+ month = sep,
+ doi = "10.1103/PhysRevB.82.094110",
+ publisher = "American Physical Society",
+}
+
+@Article{zirkelbach10b,
+ title = "First principles study of defects in carbon implanted
+ silicon",
+ journal = "to be published",
+ volume = "",
+ number = "",
+ pages = "",
+ year = "2010",
+ author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
+ K. N. Lindner and W. G. Schmidt and E. Rauls",
+}
+
+@Article{zirkelbach10c,
+ title = "...",
+ journal = "to be published",
+ volume = "",
+ number = "",
+ pages = "",
+ year = "2010",
+ author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
+ K. N. Lindner and W. G. Schmidt and E. Rauls",
+}
+
@Article{lindner99,
title = "Controlling the density distribution of Si{C}
nanocrystals for the ion beam synthesis of buried Si{C}
layers in silicon",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "147",
number = "1-4",
pages = "249--255",
@Article{lindner99_2,
title = "Mechanisms in the ion beam synthesis of Si{C} layers
in silicon",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "148",
number = "1-4",
pages = "528--533",
@Article{lindner01,
title = "Ion beam synthesis of buried Si{C} layers in silicon:
Basic physical processes",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "178",
number = "1-4",
pages = "44--54",
notes = "ibs, burried sic layers",
}
+@Article{lindner06,
+ title = "On the balance between ion beam induced nanoparticle
+ formation and displacive precipitate resolution in the
+ {C}-Si system",
+ journal = "Mater. Sci. Eng., C",
+ volume = "26",
+ number = "5-7",
+ pages = "857--861",
+ year = "2006",
+ note = "Current Trends in Nanoscience - from Materials to
+ Applications",
+ ISSN = "0928-4931",
+ doi = "DOI: 10.1016/j.msec.2005.09.099",
+ URL = "http://www.sciencedirect.com/science/article/B6TXG-4HSXVVM-1/2/5b0e351198cc2e8f5f4446a80a73d04a",
+ author = "J. K. N. Lindner and M. H{\"a}berlen and G. Thorwarth
+ and B. Stritzker",
+ notes = "c int diffusion barrier",
+}
+
@Article{ito04,
title = "Ion beam synthesis of 3{C}-Si{C} layers in Si and its
application in buffer layer for Ga{N} epitaxial
URL = "http://www.sciencedirect.com/science/article/B6THY-4CTTNGX-B/2/d24ee637db87f3f1a6ef7fe6820f267c",
author = "Y. Ito and T. Yamauchi and A. Yamamoto and M. Sasase
and S. Nishio and K. Yasuda and Y. Ishigami",
+ notes = "gan on 3c-sic, focus on ibs of 3c-sic",
+}
+
+@Article{yamamoto04,
+ title = "Organometallic vapor phase epitaxial growth of Ga{N}
+ on a 3c-Si{C}/Si(1Â 1Â 1) template formed by {C}+-ion
+ implantation into Si(1Â 1Â 1) substrate",
+ journal = "Journal of Crystal Growth",
+ volume = "261",
+ number = "2-3",
+ pages = "266--270",
+ year = "2004",
+ note = "Proceedings of the 11th Biennial (US) Workshop on
+ Organometallic Vapor Phase Epitaxy (OMVPE)",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/j.jcrysgro.2003.11.041",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-4B5BFSX-2/2/55e79e024f2a23b487d19c6fd8dbf166",
+ author = "A. Yamamoto and T. Yamauchi and T. Tanikawa and M.
+ Sasase and B. K. Ghosh and A. Hashimoto and Y. Ito",
notes = "gan on 3c-sic",
}
+@Article{liu02,
+ title = "Substrates for gallium nitride epitaxy",
+ journal = "Materials Science and Engineering: R: Reports",
+ volume = "37",
+ number = "3",
+ pages = "61--127",
+ year = "2002",
+ note = "",
+ ISSN = "0927-796X",
+ doi = "DOI: 10.1016/S0927-796X(02)00008-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TXH-45DFBSV-2/2/38c47e77fa91f23f8649a044e7135401",
+ author = "L. Liu and J. H. Edgar",
+ notes = "gan substrates",
+}
+
+@Article{takeuchi91,
+ title = "Growth of single crystalline Ga{N} film on Si
+ substrate using 3{C}-Si{C} as an intermediate layer",
+ journal = "Journal of Crystal Growth",
+ volume = "115",
+ number = "1-4",
+ pages = "634--638",
+ year = "1991",
+ note = "",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(91)90817-O",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46FJ525-TY/2/7bb50016a50b1dd1dbc36b43c46b3140",
+ author = "Tetsuya Takeuchi and Hiroshi Amano and Kazumasa
+ Hiramatsu and Nobuhiko Sawaki and Isamu Akasaki",
+ notes = "gan on 3c-sic (first time?)",
+}
+
@Article{alder57,
author = "B. J. Alder and T. E. Wainwright",
title = "Phase Transition for a Hard Sphere System",
publisher = "AIP",
year = "1957",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "27",
number = "5",
pages = "1208--1209",
title = "Studies in Molecular Dynamics. {I}. General Method",
publisher = "AIP",
year = "1959",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "31",
number = "2",
pages = "459--466",
@Article{wesch96,
title = "Silicon carbide: synthesis and processing",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "116",
number = "1-4",
pages = "305--321",
ZnSe-based semiconductor device technologies",
publisher = "AIP",
year = "1994",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "76",
number = "3",
pages = "1363--1398",
@Article{tairov78,
title = "Investigation of growth processes of ingots of silicon
carbide single crystals",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "43",
number = "2",
pages = "209--212",
cubic Si{C} for semiconductor devices",
publisher = "AIP",
year = "1983",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "42",
number = "5",
pages = "460--462",
Si{C} on silicon",
publisher = "AIP",
year = "1987",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "61",
number = "10",
pages = "4889--4893",
epitaxy",
publisher = "AIP",
year = "1993",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "73",
number = "2",
pages = "726--732",
6{H}-Si{C} substrates",
publisher = "AIP",
year = "1990",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "56",
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pages = "1353--1355",
silacyclobutane",
publisher = "AIP",
year = "1995",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "78",
number = "2",
pages = "1271--1273",
title = "Epitaxial growth of Si{C} thin films on Si-stabilized
[alpha]-Si{C}(0001) at low temperatures by solid-source
molecular beam epitaxy",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "154",
number = "1-2",
pages = "72--80",
6{H}--Si{C} by solid-source molecular beam epitaxy",
publisher = "AIP",
year = "1995",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "66",
number = "23",
pages = "3182--3184",
{IMPLANTATION}",
publisher = "AIP",
year = "1971",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "18",
number = "11",
pages = "509--511",
beam synthesis and incoherent lamp annealing",
publisher = "AIP",
year = "1987",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "51",
number = "26",
pages = "2242--2244",
title = "Solubility of Carbon in Silicon and Germanium",
publisher = "AIP",
year = "1959",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "30",
number = "6",
pages = "1551--1555",
{B} in silicon",
publisher = "AIP",
year = "1996",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "68",
number = "8",
pages = "1150--1152",
@Article{stolk95,
title = "Implantation and transient boron diffusion: the role
of the silicon self-interstitial",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "96",
number = "1-2",
pages = "187--195",
diffusion in ion-implanted silicon",
publisher = "AIP",
year = "1997",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "81",
number = "9",
pages = "6031--6050",
of Si[sub 1 - y]{C}[sub y] random alloy layers",
publisher = "AIP",
year = "1994",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "64",
number = "3",
pages = "324--326",
- x - y]Ge[sub x]{C}[sub y]",
publisher = "AIP",
year = "1991",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "70",
number = "4",
pages = "2470--2472",
molecular beam epitaxy",
publisher = "AIP",
year = "1999",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "74",
number = "6",
pages = "836--838",
month = may,
doi = "10.1103/PhysRevLett.72.3578",
publisher = "American Physical Society",
- notes = "high c concentration in si, heterostructure, starined
+ notes = "high c concentration in si, heterostructure, strained
si, dft",
}
title = "Electron Transport Model for Strained Silicon-Carbon
Alloy",
author = "Shu-Tong Chang and Chung-Yi Lin",
- journal = "Japanese Journal of Applied Physics",
+ journal = "Japanese J. Appl. Phys.",
volume = "44",
number = "4B",
pages = "2257--2262",
Si(001)",
publisher = "AIP",
year = "1997",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "82",
number = "10",
pages = "4977--4981",
potential energy surfaces",
publisher = "AIP",
year = "2009",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "130",
number = "11",
eid = "114711",
molecular dynamics method",
publisher = "AIP",
year = "1981",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "52",
number = "12",
pages = "7182--7190",
simulation of infrequent events",
publisher = "AIP",
year = "1997",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "106",
number = "11",
pages = "4665--4677",
}
@Article{sorensen2000,
- author = "Mads R. S\o rensen and Arthur F. Voter",
+ author = "Mads R. S{\o }rensen and Arthur F. Voter",
collaboration = "",
title = "Temperature-accelerated dynamics for simulation of
infrequent events",
publisher = "AIP",
year = "2000",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "112",
number = "21",
pages = "9599--9606",
simulation",
publisher = "AIP",
year = "1999",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "110",
number = "19",
pages = "9401--9410",
to the production of amorphous silicon",
publisher = "AIP",
year = "2005",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "122",
number = "15",
eid = "154509",
difficult?",
publisher = "AIP",
year = "1993",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "62",
number = "25",
pages = "3336--3338",
@Article{chaussende08,
title = "Prospects for 3{C}-Si{C} bulk crystal growth",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "310",
number = "5",
pages = "976--981",
3{C}-Si{C}/Si (001) interface",
publisher = "AIP",
year = "2009",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "106",
number = "7",
eid = "073522",
growth on Si(001) surface",
publisher = "AIP",
year = "1993",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "74",
number = "7",
pages = "4438--4445",
notes = "dislocations in diamond lattice",
}
+@Article{deguchi92,
+ title = "Synthesis of $\beta$-Si{C} Layer in Silicon by Carbon
+ Ion `Hot' Implantation",
+ author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
+ Hirao and Naoki Arai and Tomio Izumi",
+ journal = "Japanese Journal of Applied Physics",
+ volume = "31",
+ number = "Part 1, No. 2A",
+ pages = "343--347",
+ numpages = "4",
+ year = "1992",
+ URL = "http://jjap.ipap.jp/link?JJAP/31/343/",
+ doi = "10.1143/JJAP.31.343",
+ publisher = "The Japan Society of Applied Physics",
+ notes = "c-c bonds in c implanted si, hot implantation
+ efficiency, c-c hard to break by thermal annealing",
+}
+
@Article{eichhorn99,
author = "F. Eichhorn and N. Schell and W. Matz and R.
K{\"{o}}gler",
synchrotron x-ray diffraction",
publisher = "AIP",
year = "1999",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "86",
number = "8",
pages = "4184--4187",
carbon ion implantation",
publisher = "AIP",
year = "2002",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "91",
number = "3",
pages = "1287--1292",
URL = "http://link.aip.org/link/?JAP/91/1287/1",
doi = "10.1063/1.1428105",
notes = "3c-sic alignement to si host in ibs depending on
- temperature, might explain c int to c sub trafo",
+ temperature, might explain c into c sub trafo",
}
@Article{lucas10,
silicon carbide: calculation of bulk properties,
high-pressure phases, point and extended defects, and
amorphous structures",
- journal = "Journal of Physics: Condensed Matter",
+ journal = "J. Phys.: Condens. Matter",
volume = "22",
number = "3",
pages = "035802",
Beauchamp",
title = "Comparison between classical potentials and ab initio
methods for silicon under large shear",
- journal = "Journal of Physics: Condensed Matter",
+ journal = "J. Phys.: Condens. Matter",
volume = "15",
number = "41",
pages = "6943",
title = "Verification of Tersoff's Potential for Static
Structural Analysis of Solids of Group-{IV} Elements",
author = "Koji Moriguchi and Akira Shintani",
- journal = "Japanese Journal of Applied Physics",
+ journal = "Japanese J. Appl. Phys.",
volume = "37",
number = "Part 1, No. 2",
pages = "414--422",
@Article{nordlund97,
title = "Repulsive interatomic potentials calculated using
Hartree-Fock and density-functional theory methods",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "132",
number = "1",
pages = "45--54",
title = "Efficiency of ab-initio total energy calculations for
metals and semiconductors using a plane-wave basis
set",
- journal = "Computational Materials Science",
+ journal = "Comput. Mater. Sci.",
volume = "6",
number = "1",
pages = "15--50",
title = "Accurate and simple density functional for the
electronic exchange energy: Generalized gradient
approximation",
- author = "John P. Perdew and Wang Yue",
+ author = "John P. Perdew and Yue Wang",
journal = "Phys. Rev. B",
volume = "33",
number = "12",
@Article{zhu98,
title = "Ab initio pseudopotential calculations of dopant
diffusion in Si",
- journal = "Computational Materials Science",
+ journal = "Comput. Mater. Sci.",
volume = "12",
number = "4",
pages = "309--318",
950 [degree]{C}",
publisher = "AIP",
year = "1995",
- journal = "Applied Physics Letters",
+ journal = "Appl. Phys. Lett.",
volume = "66",
number = "20",
pages = "2646--2648",
alloys",
publisher = "AIP",
year = "1998",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "84",
number = "8",
pages = "4631--4633",
author = "R Jones and B J Coomer and P R Briddon",
title = "Quantum mechanical modelling of defects in
semiconductors",
- journal = "Journal of Physics: Condensed Matter",
+ journal = "J. Phys.: Condens. Matter",
volume = "16",
number = "27",
pages = "S2643",
molecular-beam epitaxy",
publisher = "AIP",
year = "2002",
- journal = "Journal of Applied Physics",
+ journal = "J. Appl. Phys.",
volume = "91",
number = "9",
pages = "5716--5727",
carbon defect, formation energies",
}
+@Article{besson91,
+ title = "Electronic structure of interstitial carbon in
+ silicon",
+ author = "Morgan Besson and Gary G. DeLeo",
+ journal = "Phys. Rev. B",
+ volume = "43",
+ number = "5",
+ pages = "4028--4033",
+ numpages = "5",
+ year = "1991",
+ month = feb,
+ doi = "10.1103/PhysRevB.43.4028",
+ publisher = "American Physical Society",
+}
+
@Article{kaxiras96,
title = "Review of atomistic simulations of surface diffusion
and growth on semiconductors",
- journal = "Computational Materials Science",
+ journal = "Comput. Mater. Sci.",
volume = "6",
number = "2",
pages = "158--172",
@Article{chen98,
title = "Production and recovery of defects in Si{C} after
irradiation and deformation",
- journal = "Journal of Nuclear Materials",
+ journal = "J. Nucl. Mater.",
volume = "258-263",
number = "Part 2",
pages = "1803--1808",
@Article{weber01,
title = "Accumulation, dynamic annealing and thermal recovery
of ion-beam-induced disorder in silicon carbide",
- journal = "Nuclear Instruments and Methods in Physics Research
- Section B: Beam Interactions with Materials and Atoms",
+ journal = "Nucl. Instrum. Methods Phys. Res. B",
volume = "175-177",
number = "",
pages = "26--30",
doi = "10.1103/PhysRevB.68.155208",
publisher = "American Physical Society",
}
+
+@Article{losev27,
+ journal = "Telegrafiya i Telefoniya bez Provodov",
+ volume = "44",
+ pages = "485--494",
+ year = "1927",
+ author = "O. V. Lossev",
+}
+
+@Article{losev28,
+ title = "Luminous carborundum detector and detection effect and
+ oscillations with crystals",
+ journal = "Philosophical Magazine Series 7",
+ volume = "6",
+ number = "39",
+ pages = "1024--1044",
+ year = "1928",
+ URL = "http://www.informaworld.com/10.1080/14786441108564683",
+ author = "O. V. Lossev",
+}
+
+@Article{losev29,
+ journal = "Physik. Zeitschr.",
+ volume = "30",
+ pages = "920--923",
+ year = "1929",
+ author = "O. V. Lossev",
+}
+
+@Article{losev31,
+ journal = "Physik. Zeitschr.",
+ volume = "32",
+ pages = "692--696",
+ year = "1931",
+ author = "O. V. Lossev",
+}
+
+@Article{losev33,
+ journal = "Physik. Zeitschr.",
+ volume = "34",
+ pages = "397--403",
+ year = "1933",
+ author = "O. V. Lossev",
+}
+
+@Article{round07,
+ title = "A note on carborundum",
+ journal = "Electrical World",
+ volume = "49",
+ pages = "308",
+ year = "1907",
+ author = "H. J. Round",
+}
projects / lectures / latex.git / blobdiff