notes = "derivation of albe bond order formalism",
}
+@Article{bean71,
+ author = "A. R. Bean and R. C. Newman",
+ title = "",
+ journal = "J. Phys. Chem. Solids",
+ volume = "32",
+ pages = "1211",
+ year = "1971",
+ notes = "experimental solubility data of carbon in silicon",
+}
+
+@Article{capano97,
+ author = "M. A. Capano and R. J. Trew",
+ title = "Silicon Carbide Electronic Materials and Devices",
+ journal = "MRS Bull.",
+ volume = "22",
+ pages = "19",
+ year = "1997",
+}
+
+@Article{fischer90,
+ author = "G. R. Fisher and P. Barnes",
+ title = "Towards a unified view of polytypism in silicon
+ carbide",
+ journal = "Philosophical Magazine Part B",
+ volume = "61",
+ pages = "217--236",
+ year = "1990",
+ notes = "sic polytypes",
+}
+
@Book{laplace,
author = "P. S. de Laplace",
title = "Th\'eorie analytique des probabilit\'es",
notes = "virial derivation for 3-body tersoff potential",
}
+@Article{moissan04,
+ author = "Henri Moissan",
+ title = "Nouvelles recherches sur la météorité de Cañon
+ Diablo",
+ journal = "Comptes rendus de l'Académie des Sciences",
+ volume = "139",
+ pages = "773--786",
+ year = "1904",
+}
+
+@Book{park98,
+ author = "Y. S. Park",
+ title = "Si{C} Materials and Devices",
+ publisher = "Academic Press",
+ address = "San Diego",
+ year = "1998",
+}
+
+@Article{tsvetkov98,
+ author = "Valeri F. Tsvetkov and R. C. Glass and D. Henshall and
+ Calvin H. Carter Jr. and D. Asbury",
+ title = "Si{C} Seeded Boule Growth",
+ journal = "Materials Science Forum",
+ volume = "264-268",
+ pages = "3--8",
+ year = "1998",
+ notes = "modified lely process, micropipes",
+}
+
@Article{verlet67,
title = "Computer {"}Experiments{"} on Classical Fluids. {I}.
Thermodynamical Properties of Lennard-Jones Molecules",
@Article{batra87,
title = "Molecular-dynamics study of self-interstitials in
silicon",
- author = "S. Ciraci {Inder P. Batra, Farid F. Abraham}",
+ author = "Inder P. Batra and Farid F. Abraham and S. Ciraci",
journal = "Phys. Rev. B",
volume = "35",
number = "18",
month = jul,
doi = "10.1103/PhysRevB.66.024106",
publisher = "American Physical Society",
- note = "sic intro, si cascade in 3c-sic, amorphization,
+ notes = "sic intro, si cascade in 3c-sic, amorphization,
tersoff modified, pair correlation of amorphous sic, md
result analyze",
}
number = "1-4",
pages = "118--122",
year = "1998",
- note = "",
ISSN = "0168-583X",
doi = "DOI: 10.1016/S0168-583X(98)00084-6",
author = "R. Devanathan and W. J. Weber and T. Diaz de la
Tight-binding molecular dynamics studies of
self-diffusion, interstitial-vacancy recombination, and
formation volumes",
- author = "T. Diaz de la Rubia {M. Tang, L. Colombo, J. Zhu}",
+ author = "M. Tang and L. Colombo and J. Zhu and T. Diaz de la
+ Rubia",
journal = "Phys. Rev. B",
volume = "55",
number = "21",
@Article{gao2001,
title = "Ab initio and empirical-potential studies of defect
properties in $3{C}-Si{C}$",
- author = "L. R. Corrales {F. Gao, E. J. Bylaska, W. J. Weber}",
+ author = "F. Gao and E. J. Bylaska and W. J. Weber and L. R.
+ Corrales",
journal = "Phys. Rev. B",
volume = "64",
number = "24",
month = sep,
doi = "10.1103/PhysRevLett.83.2351",
publisher = "American Physical Society",
- notes = "nice images of the defects",
+ notes = "nice images of the defects, si defect overview +
+ refs",
}
-@Article{capazd94,
+@Article{capaz94,
title = "Identification of the migration path of interstitial
carbon in silicon",
- author = "J. D. Joannopoulos {R. B. Capazd, A Dal Pino}",
+ author = "R. B. Capaz and A. Dal Pino and J. D. Joannopoulos",
journal = "Phys. Rev. B",
volume = "50",
number = "11",
dumbbell",
}
+@Article{dal_pino93,
+ title = "Ab initio investigation of carbon-related defects in
+ silicon",
+ author = "A. Dal Pino and Andrew M. Rappe and J. D.
+ Joannopoulos",
+ journal = "Phys. Rev. B",
+ volume = "47",
+ number = "19",
+ pages = "12554--12557",
+ numpages = "3",
+ year = "1993",
+ month = may,
+ doi = "10.1103/PhysRevB.47.12554",
+ publisher = "American Physical Society",
+ notes = "c interstitials in crystalline silicon",
+}
+
@Article{car84,
title = "Microscopic Theory of Atomic Diffusion Mechanisms in
Silicon",
notes = "mc md, strain compensation in si ge by c insertion",
}
+@Article{bean70,
+ title = "Low temperature electron irradiation of silicon
+ containing carbon",
+ journal = "Solid State Communications",
+ volume = "8",
+ number = "3",
+ pages = "175--177",
+ year = "1970",
+ note = "",
+ ISSN = "0038-1098",
+ doi = "DOI: 10.1016/0038-1098(70)90074-8",
+ URL = "http://www.sciencedirect.com/science/article/B6TVW-46MF8S4-156/2/5f4d9c189a3d97227fde9214195aa081",
+ author = "A. R. Bean and R. C. Newman",
+}
+
@Article{watkins76,
title = "{EPR} Observation of the Isolated Interstitial Carbon
Atom in Silicon",
month = sep,
doi = "10.1103/PhysRevB.42.5759",
publisher = "American Physical Society",
+ notes = "carbon diffusion in silicon",
+}
+
+@Article{tipping87,
+ author = "A K Tipping and R C Newman",
+ title = "The diffusion coefficient of interstitial carbon in
+ silicon",
+ journal = "Semiconductor Science and Technology",
+ volume = "2",
+ number = "5",
+ pages = "315--317",
+ URL = "http://stacks.iop.org/0268-1242/2/315",
+ year = "1987",
+ notes = "diffusion coefficient of carbon interstitials in
+ silicon",
}
@Article{strane96,
@Article{laveant2002,
title = "Epitaxy of carbon-rich silicon with {MBE}",
- author = "U. Gosele {P. Laveant, G. Gerth, P. Werner}",
+ author = "P. Laveant and G. Gerth and P. Werner and U.
+ G{\"o}sele",
journal = "Materials Science and Engineering B",
volume = "89",
number = "1-3",
stress, avoid sic precipitation",
}
-}
-
@Article{werner97,
author = "P. Werner and S. Eichler and G. Mariani and R.
K{\"{o}}gler and W. Skorupa",
@Article{zirkelbach2007,
title = "Monte Carlo simulation study of a selforganisation
process leading to ordered precipitate structures",
- author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
- Lindner}",
+ author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
+ and B. Stritzker",
journal = "Nucl. Instr. and Meth. B",
volume = "257",
number = "1--2",
title = "Monte-Carlo simulation study of the self-organization
of nanometric amorphous precipitates in regular arrays
during ion irradiation",
- author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
- Lindner}",
+ author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
+ and B. Stritzker",
journal = "Nucl. Instr. and Meth. B",
volume = "242",
number = "1--2",
title = "Modelling of a selforganization process leading to
periodic arrays of nanometric amorphous precipitates by
ion irradiation",
- author = "B. Stritzker {F. Zirkelbach, M. H{"}aberlen, J.K.N.
- Lindner}",
+ author = "F. Zirkelbach and M. H{\"a}berlen and J. K. N. Lindner
+ and B. Stritzker",
journal = "Comp. Mater. Sci.",
volume = "33",
number = "1--3",
NETHERLANDS",
}
+@Article{lindner99,
+ title = "Controlling the density distribution of Si{C}
+ nanocrystals for the ion beam synthesis of buried Si{C}
+ layers in silicon",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "147",
+ number = "1-4",
+ pages = "249--255",
+ year = "1999",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(98)00598-9",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-3YMWWDY-1H/2/ad53e614f783b2a7474aecb936dd0169",
+ author = "J. K. N. Lindner and B. Stritzker",
+ notes = "two-step implantation process",
+}
+
+@Article{lindner99_2,
+ title = "Mechanisms in the ion beam synthesis of Si{C} layers
+ in silicon",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "148",
+ number = "1-4",
+ pages = "528--533",
+ year = "1999",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(98)00787-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-3XGFSSH-3H/2/17d138baa6db68cb279e6de9161e5f85",
+ author = "J. K. N. Lindner and B. Stritzker",
+}
+
+@Article{lindner01,
+ title = "Ion beam synthesis of buried Si{C} layers in silicon:
+ Basic physical processes",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "178",
+ number = "1-4",
+ pages = "44--54",
+ year = "2001",
+ note = "",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(01)00504-3",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-435KG96-8/2/f222574d8945c3fd7aaf9ae1efdd37b3",
+ author = "Jörg K. N. Lindner",
+}
+
@Article{lindner02,
title = "High-dose carbon implantations into silicon:
fundamental studies for new technological tricks",
publisher = "American Physical Society",
}
+@Article{tersoff90,
+ title = "Carbon defects and defect reactions in silicon",
+ author = "J. Tersoff",
+ journal = "Phys. Rev. Lett.",
+ volume = "64",
+ number = "15",
+ pages = "1757--1760",
+ numpages = "3",
+ year = "1990",
+ month = apr,
+ doi = "10.1103/PhysRevLett.64.1757",
+ publisher = "American Physical Society",
+}
+
@Article{fahey89,
title = "Point defects and dopant diffusion in silicon",
author = "P. M. Fahey and P. B. Griffin and J. D. Plummer",
URL = "http://link.aip.org/link/?JAP/76/1363/1",
doi = "10.1063/1.358463",
}
+
+@Article{foo,
+ author = "Noch Unbekannt",
+ title = "How to find references",
+ journal = "Journal of Applied References",
+ year = "2009",
+ volume = "77",
+ pages = "1--23",
+}
+
+@Article{tang95,
+ title = "Atomistic simulation of thermomechanical properties of
+ \beta{}-Si{C}",
+ author = "Meijie Tang and Sidney Yip",
+ journal = "Phys. Rev. B",
+ volume = "52",
+ number = "21",
+ pages = "15150--15159",
+ numpages = "9",
+ year = "1995",
+ month = dec,
+ doi = "10.1103/PhysRevB.52.15150",
+ notes = "modified tersoff, scale cutoff with volume",
+ publisher = "American Physical Society",
+}
+
+@Article{sarro00,
+ title = "Silicon carbide as a new {MEMS} technology",
+ journal = "Sensors and Actuators A: Physical",
+ volume = "82",
+ number = "1-3",
+ pages = "210--218",
+ year = "2000",
+ ISSN = "0924-4247",
+ doi = "DOI: 10.1016/S0924-4247(99)00335-0",
+ URL = "http://www.sciencedirect.com/science/article/B6THG-406VM55-13/2/75385a587669b215d9ef88029a93fd59",
+ author = "Pasqualina M. Sarro",
+ keywords = "MEMS",
+ keywords = "Silicon carbide",
+ keywords = "Micromachining",
+ keywords = "Mechanical stress",
+}
+
+@Article{casady96,
+ title = "Status of silicon carbide (Si{C}) as a wide-bandgap
+ semiconductor for high-temperature applications: {A}
+ review",
+ journal = "Solid-State Electronics",
+ volume = "39",
+ number = "10",
+ pages = "1409--1422",
+ year = "1996",
+ ISSN = "0038-1101",
+ doi = "DOI: 10.1016/0038-1101(96)00045-7",
+ URL = "http://www.sciencedirect.com/science/article/B6TY5-3VSR9J0-1/2/a871c11636e937dc45bfdf48e29f725b",
+ author = "J. B. Casady and R. W. Johnson",
+}
+
+@Article{giancarli98,
+ title = "Design requirements for Si{C}/Si{C} composites
+ structural material in fusion power reactor blankets",
+ journal = "Fusion Engineering and Design",
+ volume = "41",
+ number = "1-4",
+ pages = "165--171",
+ year = "1998",
+ ISSN = "0920-3796",
+ doi = "DOI: 10.1016/S0920-3796(97)00200-7",
+ URL = "http://www.sciencedirect.com/science/article/B6V3C-3V8RYK8-T/2/16949194114900fd1330f79892d7a7be",
+ author = "L. Giancarli and J. P. Bonal and A. Caso and G. Le
+ Marois and N. B. Morley and J. F. Salavy",
+}
+
+@Article{pensl93,
+ title = "Electrical and optical characterization of Si{C}",
+ journal = "Physica B: Condensed Matter",
+ volume = "185",
+ number = "1-4",
+ pages = "264--283",
+ year = "1993",
+ ISSN = "0921-4526",
+ doi = "DOI: 10.1016/0921-4526(93)90249-6",
+ URL = "http://www.sciencedirect.com/science/article/B6TVH-46G8HRX-99/2/eab9398bf2bbf10df3ae42c2ab28a776",
+ author = "G. Pensl and W. J. Choyke",
+}
+
+@Article{tairov78,
+ title = "Investigation of growth processes of ingots of silicon
+ carbide single crystals",
+ journal = "Journal of Crystal Growth",
+ volume = "43",
+ number = "2",
+ pages = "209--212",
+ year = "1978",
+ notes = "modifief lely process",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(78)90169-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-46BY2NR-7S/2/fa6fee78ebd8322491f6366e72d5b6dc",
+ author = "Yu. M. Tairov and V. F. Tsvetkov",
+}
+
+@Article{powell87,
+ author = "J. Anthony Powell and Lawrence G. Matus and Maria A.
+ Kuczmarski",
+ title = "Growth and Characterization of Cubic Si{C}
+ Single-Crystal Films on Si",
+ publisher = "ECS",
+ year = "1987",
+ journal = "Journal of The Electrochemical Society",
+ volume = "134",
+ number = "6",
+ pages = "1558--1565",
+ keywords = "semiconductor materials; silicon compounds; carbon
+ compounds; crystal morphology; electron mobility",
+ URL = "http://link.aip.org/link/?JES/134/1558/1",
+ doi = "10.1149/1.2100708",
+ notes = "blue light emitting diodes (led)",
+}
+
+@Article{kimoto93,
+ author = "Tsunenobu Kimoto and Hironori Nishino and Woo Sik Yoo
+ and Hiroyuki Matsunami",
+ title = "Growth mechanism of 6{H}-Si{C} in step-controlled
+ epitaxy",
+ publisher = "AIP",
+ year = "1993",
+ journal = "Journal of Applied Physics",
+ volume = "73",
+ number = "2",
+ pages = "726--732",
+ keywords = "SILICON CARBIDES; EPITAXY; GROWTH RATE; TEMPERATURE
+ RANGE 10004000 K; TWINNING; ACTIVATION ENERGY; CHEMICAL
+ VAPOR DEPOSITION",
+ URL = "http://link.aip.org/link/?JAP/73/726/1",
+ doi = "10.1063/1.353329",
+}
+
+@Article{powell90,
+ author = "J. A. Powell and D. J. Larkin and L. G. Matus and W.
+ J. Choyke and J. L. Bradshaw and L. Henderson and M.
+ Yoganathan and J. Yang and P. Pirouz",
+ collaboration = "",
+ title = "Growth of improved quality 3{C}-Si{C} films on
+ 6{H}-Si{C} substrates",
+ publisher = "AIP",
+ year = "1990",
+ journal = "Applied Physics Letters",
+ volume = "56",
+ number = "14",
+ pages = "1353--1355",
+ keywords = "SILICON CARBIDES; CHEMICAL VAPOR DEPOSITION; SORPTIVE
+ PROPERTIES; PHOTOLUMINESCENCE; TRANSMISSION ELECTRON
+ MICROSCOPY; DEFECT STRUCTURE; STACKING FAULTS; VAPOR
+ PHASE EPITAXY",
+ URL = "http://link.aip.org/link/?APL/56/1353/1",
+ doi = "10.1063/1.102512",
+}
+
+@Article{fissel95,
+ title = "Epitaxial growth of Si{C} thin films on Si-stabilized
+ [alpha]-Si{C}(0001) at low temperatures by solid-source
+ molecular beam epitaxy",
+ journal = "Journal of Crystal Growth",
+ volume = "154",
+ number = "1-2",
+ pages = "72--80",
+ year = "1995",
+ notes = "solid source mbe",
+ ISSN = "0022-0248",
+ doi = "DOI: 10.1016/0022-0248(95)00170-0",
+ URL = "http://www.sciencedirect.com/science/article/B6TJ6-3Y5MMXM-1N/2/65549019b878bf02d5ec645b7eea9e98",
+ author = "A. Fissel and U. Kaiser and E. Ducke and B. Schröter
+ and W. Richter",
+}
+
+@Article{borders71,
+ author = "J. A. Borders and S. T. Picraux and W. Beezhold",
+ collaboration = "",
+ title = "{FORMATION} {OF} Si{C} {IN} {SILICON} {BY} {ION}
+ {IMPLANTATION}",
+ publisher = "AIP",
+ year = "1971",
+ journal = "Applied Physics Letters",
+ volume = "18",
+ number = "11",
+ pages = "509--511",
+ URL = "http://link.aip.org/link/?APL/18/509/1",
+ notes = "first time sic by ibs",
+ doi = "10.1063/1.1653516",
+}
+
+@Article{reeson87,
+ author = "K. J. Reeson and P. L. F. Hemment and J. Stoemenos and
+ J. Davis and G. E. Celler",
+ collaboration = "",
+ title = "Formation of buried layers of beta-Si{C} using ion
+ beam synthesis and incoherent lamp annealing",
+ publisher = "AIP",
+ year = "1987",
+ journal = "Applied Physics Letters",
+ volume = "51",
+ number = "26",
+ pages = "2242--2244",
+ keywords = "SILICON CARBIDES; FILM GROWTH; SOLIDPHASE EPITAXY; ION
+ IMPLANTATION; CARBON IONS; DOPING PROFILES; SYNTHESIS",
+ URL = "http://link.aip.org/link/?APL/51/2242/1",
+ doi = "10.1063/1.98953",
+ notes = "nice tem images, sic by ibs",
+}
+
+@Article{scace59,
+ author = "R. I. Scace and G. A. Slack",
+ collaboration = "",
+ title = "Solubility of Carbon in Silicon and Germanium",
+ publisher = "AIP",
+ year = "1959",
+ journal = "The Journal of Chemical Physics",
+ volume = "30",
+ number = "6",
+ pages = "1551--1555",
+ URL = "http://link.aip.org/link/?JCP/30/1551/1",
+ doi = "10.1063/1.1730236",
+ notes = "solubility of c in c-si",
+}
+
+@Article{cowern96,
+ author = "N. E. B. Cowern and A. Cacciato and J. S. Custer and
+ F. W. Saris and W. Vandervorst",
+ collaboration = "",
+ title = "Role of {C} and {B} clusters in transient diffusion of
+ {B} in silicon",
+ publisher = "AIP",
+ year = "1996",
+ journal = "Applied Physics Letters",
+ volume = "68",
+ number = "8",
+ pages = "1150--1152",
+ keywords = "ATOMIC CLUSTERS; BORON ADDITIONS; CRYSTAL DOPING;
+ DIFFUSION; DOPED MATERIALS; IMPURITIES; INTERSTITIALS;
+ SILICON",
+ URL = "http://link.aip.org/link/?APL/68/1150/1",
+ doi = "10.1063/1.115706",
+ notes = "suppression of transient enhanced diffusion (ted)",
+}
+
+@Article{stolk95,
+ title = "Implantation and transient boron diffusion: the role
+ of the silicon self-interstitial",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "96",
+ number = "1-2",
+ pages = "187--195",
+ year = "1995",
+ note = "Selected Papers of the Tenth International Conference
+ on Ion Implantation Technology (IIT '94)",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/0168-583X(94)00481-1",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-40WKY1P-29/2/602c6e5b809221323d2d2968edd0a71c",
+ author = "P. A. Stolk and H. -J. Gossmann and D. J. Eaglesham
+ and J. M. Poate",
+}
+
+@Article{stolk97,
+ author = "P. A. Stolk and H.-J. Gossmann and D. J. Eaglesham and
+ D. C. Jacobson and C. S. Rafferty and G. H. Gilmer and
+ M. Jara\'{\i}z and J. M. Poate and H. S. Luftman and T.
+ E. Haynes",
+ collaboration = "",
+ title = "Physical mechanisms of transient enhanced dopant
+ diffusion in ion-implanted silicon",
+ publisher = "AIP",
+ year = "1997",
+ journal = "Journal of Applied Physics",
+ volume = "81",
+ number = "9",
+ pages = "6031--6050",
+ URL = "http://link.aip.org/link/?JAP/81/6031/1",
+ doi = "10.1063/1.364452",
+ notes = "ted, transient enhanced diffusion, c silicon trap",
+}
+
+@Article{powell94,
+ author = "A. R. Powell and F. K. LeGoues and S. S. Iyer",
+ collaboration = "",
+ title = "Formation of beta-Si{C} nanocrystals by the relaxation
+ of Si[sub 1 - y]{C}[sub y] random alloy layers",
+ publisher = "AIP",
+ year = "1994",
+ journal = "Applied Physics Letters",
+ volume = "64",
+ number = "3",
+ pages = "324--326",
+ keywords = "SILICON CARBIDES; NANOSTRUCTURES; DISPERSIONS;
+ EPITAXIAL LAYERS; STRESS RELAXATION; ANNEALING;
+ TEMPERATURE EFFECTS; PRECIPITATION; DISLOCATIONS;
+ SYNTHESIS",
+ URL = "http://link.aip.org/link/?APL/64/324/1",
+ doi = "10.1063/1.111195",
+ notes = "beta sic nano crystals in si, mbe, annealing",
+}
+
+@Article{soref91,
+ author = "Richard A. Soref",
+ collaboration = "",
+ title = "Optical band gap of the ternary semiconductor Si[sub 1
+ - x - y]Ge[sub x]{C}[sub y]",
+ publisher = "AIP",
+ year = "1991",
+ journal = "Journal of Applied Physics",
+ volume = "70",
+ number = "4",
+ pages = "2470--2472",
+ keywords = "SILICON CARBIDES; GERMANIUM CARBIDES; ENERGY GAP;
+ OPTICAL PROPERTIES; DIAMONDS; SEMICONDUCTOR ALLOYS;
+ TERNARY ALLOYS",
+ URL = "http://link.aip.org/link/?JAP/70/2470/1",
+ doi = "10.1063/1.349403",
+ notes = "band gap of strained si by c",
+}
+
+@Article{kasper91,
+ author = "E Kasper",
+ title = "Superlattices of group {IV} elements, a new
+ possibility to produce direct band gap material",
+ journal = "Physica Scripta",
+ volume = "T35",
+ pages = "232--236",
+ URL = "http://stacks.iop.org/1402-4896/T35/232",
+ year = "1991",
+ notes = "superlattices, convert indirect band gap into a
+ quasi-direct one",
+}
+
+@Article{osten99,
+ author = "H. J. Osten and J. Griesche and S. Scalese",
+ collaboration = "",
+ title = "Substitutional carbon incorporation in epitaxial
+ Si[sub 1 - y]{C}[sub y] alloys on Si(001) grown by
+ molecular beam epitaxy",
+ publisher = "AIP",
+ year = "1999",
+ journal = "Applied Physics Letters",
+ volume = "74",
+ number = "6",
+ pages = "836--838",
+ keywords = "molecular beam epitaxial growth; semiconductor growth;
+ wide band gap semiconductors; interstitials; silicon
+ compounds",
+ URL = "http://link.aip.org/link/?APL/74/836/1",
+ doi = "10.1063/1.123384",
+ notes = "substitutional c in si",
+}
+
+@Article{hohenberg64,
+ title = "Inhomogeneous Electron Gas",
+ author = "P. Hohenberg and W. Kohn",
+ journal = "Phys. Rev.",
+ volume = "136",
+ number = "3B",
+ pages = "B864--B871",
+ numpages = "7",
+ year = "1964",
+ month = nov,
+ doi = "10.1103/PhysRev.136.B864",
+ publisher = "American Physical Society",
+ notes = "density functional theory, dft",
+}
+
+@Article{kohn65,
+ title = "Self-Consistent Equations Including Exchange and
+ Correlation Effects",
+ author = "W. Kohn and L. J. Sham",
+ journal = "Phys. Rev.",
+ volume = "140",
+ number = "4A",
+ pages = "A1133--A1138",
+ numpages = "5",
+ year = "1965",
+ month = nov,
+ doi = "10.1103/PhysRev.140.A1133",
+ publisher = "American Physical Society",
+ notes = "dft, exchange and correlation",
+}
+
+@Article{ruecker94,
+ title = "Strain-stabilized highly concentrated pseudomorphic
+ $Si1-x$$Cx$ layers in Si",
+ author = "H. R{\"u}cker and M. Methfessel and E. Bugiel and H.
+ J. Osten",
+ journal = "Phys. Rev. Lett.",
+ volume = "72",
+ number = "22",
+ pages = "3578--3581",
+ numpages = "3",
+ year = "1994",
+ month = may,
+ doi = "10.1103/PhysRevLett.72.3578",
+ publisher = "American Physical Society",
+ notes = "high c concentration in si, heterostructure, starined
+ si, dft",
+}
+
+@Article{chang05,
+ title = "Electron Transport Model for Strained Silicon-Carbon
+ Alloy",
+ author = "Shu-Tong Chang and Chung-Yi Lin",
+ journal = "Japanese Journal of Applied Physics",
+ volume = "44",
+ number = "4B",
+ pages = "2257--2262",
+ numpages = "5",
+ year = "2005",
+ URL = "http://jjap.ipap.jp/link?JJAP/44/2257/",
+ doi = "10.1143/JJAP.44.2257",
+ publisher = "The Japan Society of Applied Physics",
+ notes = "enhance of electron mobility in starined si",
+}
+
+@Article{osten97,
+ author = "H. J. Osten and P. Gaworzewski",
+ collaboration = "",
+ title = "Charge transport in strained Si[sub 1 - y]{C}[sub y]
+ and Si[sub 1 - x - y]Ge[sub x]{C}[sub y] alloys on
+ Si(001)",
+ publisher = "AIP",
+ year = "1997",
+ journal = "Journal of Applied Physics",
+ volume = "82",
+ number = "10",
+ pages = "4977--4981",
+ keywords = "silicon compounds; Ge-Si alloys; wide band gap
+ semiconductors; semiconductor epitaxial layers; carrier
+ density; Hall mobility; interstitials; defect states",
+ URL = "http://link.aip.org/link/?JAP/82/4977/1",
+ doi = "10.1063/1.366364",
+ notes = "charge transport in strained si",
+}
+
+@Article{PhysRevB.69.155214,
+ title = "Carbon-mediated aggregation of self-interstitials in
+ silicon: {A} large-scale molecular dynamics study",
+ author = "Sumeet S. Kapur and Manish Prasad and Talid Sinno",
+ journal = "Phys. Rev. B",
+ volume = "69",
+ number = "15",
+ pages = "155214",
+ numpages = "8",
+ year = "2004",
+ month = apr,
+ doi = "10.1103/PhysRevB.69.155214",
+ publisher = "American Physical Society",
+ notes = "simulation using promising tersoff reparametrization",
+}
+
+@Article{tang95,
+ title = "Atomistic simulation of thermomechanical properties of
+ \beta{}-Si{C}",
+ author = "Meijie Tang and Sidney Yip",
+ journal = "Phys. Rev. B",
+ volume = "52",
+ number = "21",
+ pages = "15150--15159",
+ numpages = "9",
+ year = "1995",
+ month = dec,
+ doi = "10.1103/PhysRevB.52.15150",
+ publisher = "American Physical Society",
+ notes = "promising tersoff reparametrization",
+}
+
+@Article{barkema96,
+ title = "Event-Based Relaxation of Continuous Disordered
+ Systems",
+ author = "G. T. Barkema and Normand Mousseau",
+ journal = "Phys. Rev. Lett.",
+ volume = "77",
+ number = "21",
+ pages = "4358--4361",
+ numpages = "3",
+ year = "1996",
+ month = nov,
+ doi = "10.1103/PhysRevLett.77.4358",
+ publisher = "American Physical Society",
+ notes = "activation relaxation technique, art, speed up slow
+ dynamic mds",
+}
+
+@Article{cances09,
+ author = "E. Canc\`{e}s and F. Legoll and M.-C. Marinica and K.
+ Minoukadeh and F. Willaime",
+ collaboration = "",
+ title = "Some improvements of the activation-relaxation
+ technique method for finding transition pathways on
+ potential energy surfaces",
+ publisher = "AIP",
+ year = "2009",
+ journal = "The Journal of Chemical Physics",
+ volume = "130",
+ number = "11",
+ eid = "114711",
+ numpages = "6",
+ pages = "114711",
+ keywords = "eigenvalues and eigenfunctions; iron; potential energy
+ surfaces; vacancies (crystal)",
+ URL = "http://link.aip.org/link/?JCP/130/114711/1",
+ doi = "10.1063/1.3088532",
+ notes = "improvements to art, refs for methods to find
+ transition pathways",
+}
+
+@Article{parrinello81,
+ author = "M. Parrinello and A. Rahman",
+ collaboration = "",
+ title = "Polymorphic transitions in single crystals: {A} new
+ molecular dynamics method",
+ publisher = "AIP",
+ year = "1981",
+ journal = "Journal of Applied Physics",
+ volume = "52",
+ number = "12",
+ pages = "7182--7190",
+ keywords = "MONOCRYSTALS; PHASE TRANSFORMATIONS; STRUCTURAL
+ MODELS; DYNAMICS; THEORETICAL DATA; STRESSES;
+ CONFIGURATION; LAGRANGE EQUATIONS; SIZE; NICKEL;
+ COMPRESSION; TENSILE PROPERTIES; COMPARATIVE
+ EVALUATIONS; STRAINS; CUBIC LATTICES; HCP LATTICES;
+ IMPACT SHOCK",
+ URL = "http://link.aip.org/link/?JAP/52/7182/1",
+ doi = "10.1063/1.328693",
+}
+
+@Article{stillinger85,
+ title = "Computer simulation of local order in condensed phases
+ of silicon",
+ author = "Frank H. Stillinger and Thomas A. Weber",
+ journal = "Phys. Rev. B",
+ volume = "31",
+ number = "8",
+ pages = "5262--5271",
+ numpages = "9",
+ year = "1985",
+ month = apr,
+ doi = "10.1103/PhysRevB.31.5262",
+ publisher = "American Physical Society",
+}
+
+@Article{bazant97,
+ title = "Environment-dependent interatomic potential for bulk
+ silicon",
+ author = "Martin Z. Bazant and Efthimios Kaxiras and J. F.
+ Justo",
+ journal = "Phys. Rev. B",
+ volume = "56",
+ number = "14",
+ pages = "8542--8552",
+ numpages = "10",
+ year = "1997",
+ month = oct,
+ doi = "10.1103/PhysRevB.56.8542",
+ publisher = "American Physical Society",
+}
+
+@Article{justo98,
+ title = "Interatomic potential for silicon defects and
+ disordered phases",
+ author = "Jo\~ao F. Justo and Martin Z. Bazant and Efthimios
+ Kaxiras and V. V. Bulatov and Sidney Yip",
+ journal = "Phys. Rev. B",
+ volume = "58",
+ number = "5",
+ pages = "2539--2550",
+ numpages = "11",
+ year = "1998",
+ month = aug,
+ doi = "10.1103/PhysRevB.58.2539",
+ publisher = "American Physical Society",
+}
+
+@Article{parcas_md,
+ title = "{PARCAS} molecular dynamics code",
+ author = "K. Nordlund",
+ year = "2008",
+}
projects / lectures / latex.git / blobdiff