keywords = "Molecular dynamics simulations",
}
-@Article{zirkelbach10a,
+@Article{zirkelbach10,
title = "Defects in carbon implanted silicon calculated by
classical potentials and first-principles methods",
author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
publisher = "American Physical Society",
}
-@Article{zirkelbach10b,
+@Article{zirkelbach11a,
title = "First principles study of defects in carbon implanted
silicon",
journal = "to be published",
volume = "",
number = "",
pages = "",
- year = "2010",
- author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
- K. N. Lindner and W. G. Schmidt and E. Rauls",
+ year = "2011",
+ author = "F. Zirkelbach and B. Stritzker and J. K. N. Lindner
+ and W. G. Schmidt and E. Rauls",
}
-@Article{zirkelbach10c,
+@Article{zirkelbach11b,
title = "...",
journal = "to be published",
volume = "",
number = "",
pages = "",
- year = "2010",
+ year = "2011",
author = "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
K. N. Lindner and W. G. Schmidt and E. Rauls",
}
+@Article{lindner95,
+ author = "J. K. N. Lindner and A. Frohnwieser and B.
+ Rauschenbach and B. Stritzker",
+ title = "ke{V}- and Me{V}- Ion Beam Synthesis of Buried Si{C}
+ Layers in Silicon",
+ journal = "MRS Online Proceedings Library",
+ volume = "354",
+ number = "",
+ pages = "171",
+ year = "1994",
+ doi = "10.1557/PROC-354-171",
+ URL = "http://dx.doi.org/10.1557/PROC-354-171",
+ eprint = "http://journals.cambridge.org/article_S1946427400420853",
+ notes = "first time ibs at moderate temperatures",
+}
+
+@Article{lindner96,
+ title = "Formation of buried epitaxial silicon carbide layers
+ in silicon by ion beam synthesis",
+ journal = "Materials Chemistry and Physics",
+ volume = "46",
+ number = "2-3",
+ pages = "147--155",
+ year = "1996",
+ note = "",
+ ISSN = "0254-0584",
+ doi = "DOI: 10.1016/S0254-0584(97)80008-9",
+ URL = "http://www.sciencedirect.com/science/article/B6TX4-3VSGY9S-8/2/f001f23c0b3bc0fc3fc683616588fbc7",
+ author = "J. K. N. Lindner and K. Volz and U. Preckwinkel and B.
+ Götz and A. Frohnwieser and B. Rauschenbach and B.
+ Stritzker",
+ notes = "dose window",
+}
+
+@Article{calcagno96,
+ title = "Carbon clustering in Si[sub 1-x]{C}[sub x] formed by
+ ion implantation",
+ journal = "Nuclear Instruments and Methods in Physics Research
+ Section B: Beam Interactions with Materials and Atoms",
+ volume = "120",
+ number = "1-4",
+ pages = "121--124",
+ year = "1996",
+ note = "Proceedings of the E-MRS '96 Spring Meeting Symp. I on
+ New Trends in Ion Beam Processing of Materials",
+ ISSN = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(96)00492-2",
+ URL = "http://www.sciencedirect.com/science/article/B6TJN-3VSHB0W-1S/2/164b9f4f972a02f44b341b0de28bba1d",
+ author = "L. Calcagno and G. Compagnini and G. Foti and M. G.
+ Grimaldi and P. Musumeci",
+ notes = "dose window, graphitic bonds",
+}
+
+@Article{lindner98,
+ title = "Mechanisms of Si{C} Formation in the Ion Beam
+ Synthesis of 3{C}-Si{C} Layers in Silicon",
+ journal = "Materials Science Forum",
+ volume = "264-268",
+ pages = "215--218",
+ year = "1998",
+ note = "",
+ doi = "10.4028/www.scientific.net/MSF.264-268.215",
+ URL = "http://www.scientific.net/MSF.264-268.215",
+ author = "J. K. N. Lindner and W. Reiber and B. Stritzker",
+ notes = "intermediate temperature for sharp interface + good
+ crystallinity",
+}
+
@Article{lindner99,
title = "Controlling the density distribution of Si{C}
nanocrystals for the ion beam synthesis of buried Si{C}
Ion `Hot' Implantation",
author = "Masahiro Deguchi and Makoto Kitabatake and Takashi
Hirao and Naoki Arai and Tomio Izumi",
- journal = "Japanese Journal of Applied Physics",
+ journal = "Japanese J. Appl. Phys.",
volume = "31",
number = "Part 1, No. 2A",
pages = "343--347",
pages = "S2643",
URL = "http://stacks.iop.org/0953-8984/16/i=27/a=004",
year = "2004",
- notes = "ab inito init, vibrational modes, c defect in si",
+ notes = "ab inito dft intro, vibrational modes, c defect in
+ si",
}
@Article{park02,
URL = "http://dx.doi.org/10.1557/PROC-59-419",
eprint = "http://journals.cambridge.org/article_S1946427400543681",
}
+
+@Article{puska98,
+ title = "Convergence of supercell calculations for point
+ defects in semiconductors: Vacancy in silicon",
+ author = "M. J. Puska and S. P{\"o}ykk{\"o} and M. Pesola and R.
+ M. Nieminen",
+ journal = "Phys. Rev. B",
+ volume = "58",
+ number = "3",
+ pages = "1318--1325",
+ numpages = "7",
+ year = "1998",
+ month = jul,
+ doi = "10.1103/PhysRevB.58.1318",
+ publisher = "American Physical Society",
+ notes = "convergence k point supercell size, vacancy in
+ silicon",
+}
+
+@Article{serre95,
+ author = "C. Serre and A. P\'{e}rez-Rodr\'{\i}guez and A.
+ Romano-Rodr\'{\i}guez and J. R. Morante and R.
+ K{\"{o}}gler and W. Skorupa",
+ collaboration = "",
+ title = "Spectroscopic characterization of phases formed by
+ high-dose carbon ion implantation in silicon",
+ publisher = "AIP",
+ year = "1995",
+ journal = "Journal of Applied Physics",
+ volume = "77",
+ number = "7",
+ pages = "2978--2984",
+ keywords = "SILICON; ION IMPLANTATION; PHASE STUDIES; CARBON IONS;
+ FOURIER TRANSFORM SPECTROSCOPY; RAMAN SPECTRA;
+ PHOTOELECTRON SPECTROSCOPY; TEM; TEMPERATURE
+ DEPENDENCE; PRECIPITATES; ANNEALING",
+ URL = "http://link.aip.org/link/?JAP/77/2978/1",
+ doi = "10.1063/1.358714",
+}
projects / lectures / latex.git / blobdiff