notes = {derivation of albe bond order formalism},
}
+@ARTICLE{mattoni2007,
+ author = {{Mattoni}, A. and {Ippolito}, M. and {Colombo}, L.},
+ title = "{Atomistic modeling of brittleness in covalent materials}",
+ journal = {Phys. Rev. B},
+ year = 2007,
+ month = dec,
+ volume = 76,
+ number = 22,
+ pages = {224103-+},
+ doi = {10.1103/PhysRevB.76.224103},
+ notes = {adopted tersoff potential for Si, C, Ge ad SiC;
+ longe(r)-range-interactions, brittle propagation of fracture,
+ more available potentials, universal energy relation (uer),
+ minimum range model (mrm)}
+}
+
@Article{koster2002,
title = {Stress relaxation in $a-Si$ induced by ion bombardment},
author = {M. Koster, H. M. Urbassek},
notes = {virial derivation for 3-body tersoff potential}
}
+@Article{verlet67,
+ title = {Computer "Experiments" on Classical Fluids. I. Thermodynamical Properties of Lennard-Jones Molecules},
+ author = {Verlet, Loup },
+ journal = {Phys. Rev.},
+ volume = {159},
+ number = {1},
+ pages = {98},
+ year = {1967},
+ month = {Jul},
+ doi = {10.1103/PhysRev.159.98},
+ publisher = {American Physical Society},
+ notes = {velocity verlet integration algorithm equation of motion}
+}
+
+@article{berendsen84,
+ author = {H. J. C. Berendsen and J. P. M. Postma and W. F. van Gunsteren
+ and A. DiNola and J. R. Haak},
+ collaboration = {},
+ title = {Molecular dynamics with coupling to an external bath},
+ publisher = {AIP},
+ year = {1984},
+ journal = {The Journal of Chemical Physics},
+ volume = {81},
+ number = {8},
+ pages = {3684-3690},
+ keywords = {MOLECULAR DYNAMICS CALCULATION; TRANSPORT THEORY;
+ COMPUTERIZED SIMULATION; LIQUIDS; STRUCTURE FACTORS},
+ url = {http://link.aip.org/link/?JCP/81/3684/1},
+ doi = {10.1063/1.448118},
+ notes = {berendsen thermostat barostat}
+}
+
+@article{huang95,
+ author={Hanchen Huang and N M Ghoniem and J K Wong and M Baskes},
+ title={Molecular dynamics determination of defect energetics in beta -SiC
+ using three representative empirical potentials},
+ journal={Modelling and Simulation in Materials Science and Engineering},
+ volume={3},
+ number={5},
+ pages={615-627},
+ url={http://stacks.iop.org/0965-0393/3/615},
+ notes = {comparison of tersoff, pearson and eam for defect energetics in sic;
+ (m)eam parameters for sic},
+ year={1995}
+}
+
+@Article{tersoff89,
+ title = {Relationship between the embedded-atom method and
+ Tersoff potentials},
+ author = {Brenner, Donald W.},
+ journal = {Phys. Rev. Lett.},
+ volume = {63},
+ number = {9},
+ pages = {1022},
+ numpages = {1},
+ year = {1989},
+ month = {Aug},
+ doi = {10.1103/PhysRevLett.63.1022},
+ publisher = {American Physical Society},
+ notes = {relation of tersoff and eam potential}
+}
+
% molecular dynamics: applications
@Article{batra87,
configuration}
}
+@Article{gao02,
+ title = {Cascade overlap and amorphization in $3C-SiC:$
+ Defect accumulation, topological features, and disordering},
+ author = {Gao, F. and Weber, W. J.},
+ journal = {Phys. Rev. B},
+ volume = {66},
+ number = {2},
+ pages = {024106},
+ numpages = {10},
+ year = {2002},
+ month = {Jul},
+ doi = {10.1103/PhysRevB.66.024106},
+ publisher = {American Physical Society},
+ note = {sic intro, si cascade in 3c-sic, amorphization, tersoff modified,
+ pair correlation of amorphous sic, md result analyze}
+}
+
+@Article{devanathan98,
+ title = "Computer simulation of a 10 keV Si displacement cascade in SiC",
+ journal = "Nuclear Instruments and Methods in Physics Research Section B:
+ Beam Interactions with Materials and Atoms",
+ volume = "141",
+ number = "1-4",
+ pages = "118 - 122",
+ year = "1998",
+ note = "",
+ issn = "0168-583X",
+ doi = "DOI: 10.1016/S0168-583X(98)00084-6",
+ author = "R. Devanathan and W. J. Weber and T. Diaz de la Rubia",
+ notes = {modified tersoff short range potential, ab initio 3c-sic}
+}
+
+@Article{devanathan98_2,
+ title = "Displacement threshold energies in [beta]-SiC",
+ journal = "Journal of Nuclear Materials",
+ volume = "253",
+ number = "1-3",
+ pages = "47 - 52",
+ year = "1998",
+ issn = "0022-3115",
+ doi = "DOI: 10.1016/S0022-3115(97)00304-8",
+ author = "R. Devanathan and T. Diaz de la Rubia and W. J. Weber",
+ notes = "modified tersoff, ab initio, combined ab initio tersoff"
+}
+
+@Article{batra87,
+ title = {SiC/Si heteroepitaxial growth},
+ author = {M. Kitabatake},
+ journal = {Thin Solid Films},
+ volume = {369},
+ pages = {257--264},
+ numpages = {8},
+ year = {2000},
+ notes = {md simulation, sic si heteroepitaxy, mbe}
+}
+
% tight binding
@Article{tang97,
title = {Intrinsic point defects in crystalline silicon:
- Tight-binding molecular dynamics studiesof self-diffusion,
+ Tight-binding molecular dynamics studies of self-diffusion,
interstitial-vacancy recombination, and formation volumes},
author = {M. Tang, L. Colombo, J. Zhu, T. Diaz de la Rubia},
journal = {Phys. Rev. B},
notes = {defects in 3c-sic}
}
+@Article{mattoni2002,
+ title = {Self-interstitial trapping by carbon complexes in crystalline silicon},
+ author = {Mattoni, A. and Bernardini, F. and Colombo, L. },
+ journal = {Phys. Rev. B},
+ volume = {66},
+ number = {19},
+ pages = {195214},
+ numpages = {6},
+ year = {2002},
+ month = {Nov},
+ doi = {10.1103/PhysRevB.66.195214},
+ publisher = {American Physical Society},
+ notes = {c in c-si, diffusion, interstitial configuration + links}
+}
+
% ab initio
@Article{leung99,
notes = {nice images of the defects}
}
-@Article{PhysRevB.50.7439,
+@Article{capazd94,
title = {Identification of the migration path of interstitial carbon
in silicon},
author = {R. B. Capazd, A Dal Pino, J. D. Joannopoulos},
notes = {carbon interstitial migration path shown, 001 c-si dumbbell}
}
-% experimental stuff
+@Article{car84,
+ title = {Microscopic Theory of Atomic Diffusion Mechanisms in Silicon},
+ author = {Car, Roberto and Kelly, Paul J. and Oshiyama, Atsushi
+ and Pantelides, Sokrates T.},
+ journal = {Phys. Rev. Lett.},
+ volume = {52},
+ number = {20},
+ pages = {1814--1817},
+ numpages = {3},
+ year = {1984},
+ month = {May},
+ doi = {10.1103/PhysRevLett.52.1814},
+ publisher = {American Physical Society},
+ notes = {microscopic theory diffusion silicon dft migration path formation}
+}
+
+% monte carlo md
+
+@Article{kelires97,
+ title = {Short-range order, bulk moduli,
+ and physical trends in c-$Si1-x$$Cx$ alloys },
+ author = {Kelires, P. C. },
+ journal = {Phys. Rev. B},
+ volume = {55},
+ number = {14},
+ pages = {8784--8787},
+ numpages = {3},
+ year = {1997},
+ month = {Apr},
+ doi = {10.1103/PhysRevB.55.8784},
+ publisher = {American Physical Society},
+ notes = {c strained si, montecarlo md, bulk moduli, next neighbour dist}
+}
+
+@Article{kelires95,
+ title = {Monte Carlo Studies of Ternary Semiconductor Alloys:
+ Application to the $Si1-x-yGexCy$ System},
+ author = {Kelires, P. C.},
+ journal = {Phys. Rev. Lett.},
+ volume = {75},
+ number = {6},
+ pages = {1114--1117},
+ numpages = {3},
+ year = {1995},
+ month = {Aug},
+ doi = {10.1103/PhysRevLett.75.1114},
+ publisher = {American Physical Society},
+ notes = {mc md, strain compensation in si ge by c insertion}
+}
+
+% experimental stuff - interstitials
@Article{watkins76,
title = {EPR Observation of the Isolated Interstitial Carbon Atom in Silicon},
- author = {Watkins, G. D. and Brower, K. L.},
+ author = {G. D. Watkins and K. L. Brower},
journal = {Phys. Rev. Lett.},
volume = {36},
number = {22},
notes = {epr observations of 100 interstitial carbon atom in silicon}
}
-@Article{PhysRevB.42.5759,
+@Article{song90,
title = {EPR identification of the single-acceptor state of interstitial carbon in silicon},
author = {L. W. Song, G. D. Watkins},
journal = {Phys. Rev. B},
publisher = {American Physical Society}
}
+% experimental stuff - strained silicon
+
+@Article{strane96,
+ title = {Carbon incorporation into Si at high concentrations
+ by ion implantation and solid phase epitaxy},
+ author = {J. W. Strane and S. R. Lee and H. J. Stein and S. T. Picraux and
+ J. K. Watanabe and J. W. Mayer},
+ journal = {J. Appl. Phys.},
+ volume = {79},
+ pages = {637},
+ year = {1996},
+ month = {January},
+ doi = {10.1063/1.360806},
+ notes = {strained silicon, carbon supersaturation}
+}
+
+@article{laveant2002,
+ title = {Epitaxy of carbon-rich silicon with MBE},
+ author = {P. Laveant, G. Gerth, P. Werner, U. Gosele},
+ journal = {Materials Science and Engineering B},
+ volume = {89},
+ number = {1-3},
+ pages = {241-245},
+ keywords = {Growth; Epitaxy; MBE; Carbon; Silicon},
+ notes = {low c in si, tensile stress to compensate compressive stress,
+ avoid sic precipitation}}
+}
+
+% sic formation mechanism
+
+@article{werner97,
+ author = {P. Werner and S. Eichler and G. Mariani and R. K\"{o}gler and W. Skorupa},
+ title = {Investigation of C[sub x]Si defects in C implanted silicon by transmission electron microscopy},
+ publisher = {AIP},
+ year = {1997},
+ journal = {Applied Physics Letters},
+ volume = {70},
+ number = {2},
+ pages = {252-254},
+ keywords = {silicon; ion implantation; carbon; crystal defects;
+ transmission electron microscopy; annealing;
+ positron annihilation; secondary ion mass spectroscopy;
+ buried layers; precipitation},
+ url = {http://link.aip.org/link/?APL/70/252/1},
+ doi = {10.1063/1.118381},
+ notes = {si-c complexes, agglomerate, sic in si matrix, sic precipitate}
+}
+
+@article{strane94,
+ author = {J. W. Strane and H. J. Stein and S. R. Lee and S. T. Picraux and
+ J. K. Watanabe and J. W. Mayer},
+ collaboration = {},
+ title = {Precipitation and relaxation in strained
+ Si[sub 1 - y]C[sub y]/Si heterostructures},
+ publisher = {AIP},
+ year = {1994},
+ journal = {Journal of Applied Physics},
+ volume = {76},
+ number = {6},
+ pages = {3656-3668},
+ keywords = {SILICON CARBIDES; SILICON; PRECIPITATION; STRAINS},
+ url = {http://link.aip.org/link/?JAP/76/3656/1},
+ doi = {10.1063/1.357429},
+ notes = {strained si-c to 3c-sic, carbon nucleation + refs}
+}
+
+% properties sic
+
+@Article{edgar92,
+ title = {Prospects for device implementation of wide band gap semiconductors},
+ author = {J. H. Edgar},
+ journal = {J. Mater. Res.},
+ volume = {7},
+ pages = {235},
+ year = {1992},
+ month = {January},
+ doi = {10.1557/JMR.1992.0235},
+ notes = {properties wide band gap semiconductor, sic polytypes}
+}
+
% my own publications
@article{zirkelbach2007,
title = {Monte Carlo simulation study of a selforganisation process
leading to ordered precipitate structures},
author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
- journal = {Nucl. instr. and Meth. B},
+ journal = {Nucl. Instr. and Meth. B},
volume = {257},
number = {1--2},
pages = {75--79},
title = {Monte-Carlo simulation study of the self-organization of nanometric
amorphous precipitates in regular arrays during ion irradiation},
author = {F. Zirkelbach, M. H"aberlen, J.K.N. Lindner, B. Stritzker},
- journal = {Nucl. instr. and Meth. B},
+ journal = {Nucl. Instr. and Meth. B},
volume = {242},
number = {1--2},
pages = {679--682},
publisher = {ELSEVIER SCIENCE BV, PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS}
}
+% the one of my boss
+
+@Article{lindner02,
+ title = {High-dose carbon implantations into silicon:
+ fundamental studies for new technological tricks},
+ author = {J. K. N. Lindner},
+ journal = {Appl. Phys. A},
+ volume = {77},
+ pages = {27--38},
+ year = {2003},
+ doi = {10.1007/s00339-002-2062-8},
+ notes = {ibs, burried sic layers}
+}
+
+
projects / lectures / latex.git / blobdiff