added another si diffusion paper

[lectures/latex.git] / bibdb / bibdb.bib

diff --git a/bibdb/bibdb.bib b/bibdb/bibdb.bib
index b467de3..cc27def 100644 (file)
--- a/bibdb/bibdb.bib
+++ b/bibdb/bibdb.bib
@@ -495,6 +495,23 @@
                  silicon",
 }
 
+@Article{sahli05,
+  title =        "Ab initio molecular dynamics simulation of
+                 self-interstitial diffusion in silicon",
+  author =       "Beat Sahli and Wolfgang Fichtner",
+  journal =      "Phys. Rev. B",
+  volume =       "72",
+  number =       "24",
+  pages =        "245210",
+  numpages =     "6",
+  year =         "2005",
+  month =        dec,
+  doi =          "10.1103/PhysRevB.72.245210",
+  publisher =    "American Physical Society",
+  notes =        "si self int, diffusion, barrier height, voronoi
+                 mapping applied",
+}
+
 @Article{hobler05,
   title =        "Ab initio calculations of the interaction between
                  native point defects in silicon",
@@ -705,7 +722,24 @@
   month =        oct,
   doi =          "10.1103/PhysRevB.58.9845",
   publisher =    "American Physical Society",
-  notes =        "carbon pairs in si",
+  notes =        "c_i c_s pair configuration, theoretical results",
+}
+
+@Article{song90_2,
+  title =        "Bistable interstitial-carbon--substitutional-carbon
+                 pair in silicon",
+  author =       "L. W. Song and X. D. Zhan and B. W. Benson and G. D.
+                 Watkins",
+  journal =      "Phys. Rev. B",
+  volume =       "42",
+  number =       "9",
+  pages =        "5765--5783",
+  numpages =     "18",
+  year =         "1990",
+  month =        sep,
+  doi =          "10.1103/PhysRevB.42.5765",
+  publisher =    "American Physical Society",
+  notes =        "c_i c_s pair configuration, experimental results",
 }
 
 @Article{liu02,
@@ -1095,15 +1129,15 @@
 }
 
 @Article{zirkelbach10a,
-  title =        "Defects in Carbon implanted Silicon calculated by
-                 classical potentials and first principles methods",
-  journal =      "to be published",
-  volume =       "",
-  number =       "",
+  title =        "Defects in carbon implanted silicon calculated by
+                 classical potentials and first-principles methods",
+  journal =      "Phys. Rev. B",
+  volume =       "82",
+  number =       "9",
   pages =        "",
   year =         "2010",
   author =       "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
-                 K. N. Lindner and W. G. Schmidtd and E. Rauls",
+                 K. N. Lindner and W. G. Schmidt and E. Rauls",
 }
 
 @Article{zirkelbach10b,
@@ -1115,7 +1149,7 @@
   pages =        "",
   year =         "2010",
   author =       "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
-                 K. N. Lindner and W. G. Schmidtd and E. Rauls",
+                 K. N. Lindner and W. G. Schmidt and E. Rauls",
 }
 
 @Article{zirkelbach10c,
@@ -1126,7 +1160,7 @@
   pages =        "",
   year =         "2010",
   author =       "F. Zirkelbach and B. Stritzker and K. Nordlund and J.
-                 K. N. Lindner and W. G. Schmidtd and E. Rauls",
+                 K. N. Lindner and W. G. Schmidt and E. Rauls",
 }
 
 @Article{lindner99,
@@ -2825,6 +2859,21 @@
                  carbon defect, formation energies",
 }
 
+@Article{besson91,
+  title =        "Electronic structure of interstitial carbon in
+                 silicon",
+  author =       "Morgan Besson and Gary G. DeLeo",
+  journal =      "Phys. Rev. B",
+  volume =       "43",
+  number =       "5",
+  pages =        "4028--4033",
+  numpages =     "5",
+  year =         "1991",
+  month =        feb,
+  doi =          "10.1103/PhysRevB.43.4028",
+  publisher =    "American Physical Society",
+}
+
 @Article{kaxiras96,
   title =        "Review of atomistic simulations of surface diffusion
                  and growth on semiconductors",