@Article{newman65,
title = "Vibrational absorption of carbon in silicon",
- journal = "Journal of Physics and Chemistry of Solids",
+ journal = "J. Phys. Chem. Solids",
volume = "26",
number = "2",
pages = "373--379",
@Article{bean71,
title = "The solubility of carbon in pulled silicon crystals",
- journal = "Journal of Physics and Chemistry of Solids",
+ journal = "J. Phys. Chem. Solids",
volume = "32",
number = "6",
pages = "1211--1219",
@Article{foell77,
title = "The formation of swirl defects in silicon by
agglomeration of self-interstitials",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "40",
number = "1",
pages = "90--108",
@Article{foell81,
title = "Microdefects in silicon and their relation to point
defects",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "52",
number = "Part 2",
pages = "907--916",
@InProceedings{werner96,
author = "P. Werner and R. K{\"{o}}gler and W. Skorupa and D.
Eichler",
- booktitle = "Ion Implantation Technology. Proceedings of the 11th
- International Conference on",
+ booktitle = "Proceedings of the 11th International Conference on
+ Ion Implantation Technology.",
title = "{TEM} investigation of {C}-Si defects in carbon
implanted silicon",
year = "1996",
title = "Organometallic vapor phase epitaxial growth of Ga{N}
on a 3c-Si{C}/Si(1 1 1) template formed by {C}+-ion
implantation into Si(1 1 1) substrate",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "261",
number = "2-3",
pages = "266--270",
@Article{takeuchi91,
title = "Growth of single crystalline Ga{N} film on Si
substrate using 3{C}-Si{C} as an intermediate layer",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "115",
number = "1-4",
pages = "634--638",
@Article{tairov81,
title = "General principles of growing large-size single
crystals of various silicon carbide polytypes",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "52",
number = "Part 1",
pages = "146--150",
@Article{barrett91,
title = "Si{C} boule growth by sublimation vapor transport",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "109",
number = "1-4",
pages = "17--23",
@Article{barrett93,
title = "Growth of large Si{C} single crystals",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "128",
number = "1-4",
pages = "358--362",
title = "Control of polytype formation by surface energy
effects during the growth of Si{C} monocrystals by the
sublimation method",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "131",
number = "1-2",
pages = "71--74",
Single-Crystal Films on Si",
publisher = "ECS",
year = "1987",
- journal = "Journal of The Electrochemical Society",
+ journal = "J. Electrochem. Soc.",
volume = "134",
number = "6",
pages = "1558--1565",
@Article{ueda90,
title = "Crystal growth of Si{C} by step-controlled epitaxy",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "104",
number = "3",
pages = "695--700",
@Article{kaneda87,
title = "{MBE} growth of 3{C}·Si{C}/6·Si{C} and the electric
properties of its p-n junction",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "81",
number = "1-4",
pages = "536--542",
@Article{powell93_2,
title = "Si[sub 1-x-y]Ge[sub x]{C}[sub y] growth and properties
of the ternary system",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "127",
number = "1-4",
pages = "425--429",
author = "H. J. Osten",
title = "Modification of Growth Modes in Lattice-Mismatched
Epitaxial Systems: Si/Ge",
- journal = "physica status solidi (a)",
+ journal = "phys. status solidi (a)",
volume = "145",
number = "2",
publisher = "WILEY-VCH Verlag",
@Article{chaussende07,
author = "D. Chaussende and P. J. Wellmann and M. Pons",
title = "Status of Si{C} bulk growth processes",
- journal = "Journal of Physics D: Applied Physics",
+ journal = "J. Phys. D",
volume = "40",
number = "20",
pages = "6150",
Heteroepitaxial Growth",
publisher = "WILEY-VCH Verlag",
year = "1997",
- journal = "physica status solidi (b)",
+ journal = "phys. status solidi (b)",
volume = "202",
pages = "405--420",
URL = "http://dx.doi.org/10.1002/1521-3951(199707)202:1<405::AID-PSSB405>3.0.CO;2-5",
@Article{hornstra58,
title = "Dislocations in the diamond lattice",
- journal = "Journal of Physics and Chemistry of Solids",
+ journal = "J. Phys. Chem. Solids",
volume = "5",
number = "1-2",
pages = "129--141",
title = "Electronic Conduction in Silicon Carbide",
publisher = "AIP",
year = "1953",
- journal = "The Journal of Chemical Physics",
+ journal = "J. Chem. Phys.",
volume = "21",
number = "5",
pages = "821--827",
@Article{shibahara86,
title = "Surface morphology of cubic Si{C}(100) grown on
Si(100) by chemical vapor deposition",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "78",
number = "3",
pages = "538--544",
@Article{fuyuki89,
title = "Atomic layer epitaxy of cubic Si{C} by gas source
{MBE} using surface superstructure",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "95",
number = "1-4",
pages = "461--463",
@Article{yoshinobu90,
title = "Atomic level control in gas source {MBE} growth of
cubic Si{C}",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "99",
number = "1-4",
pages = "520--524",
3{C}-Si{C} on Si by Gas Source Molecular Beam Epitaxy",
publisher = "WILEY-VCH Verlag",
year = "1997",
- journal = "physica status solidi (b)",
+ journal = "phys. status solidi (b)",
volume = "202",
pages = "359--378",
notes = "3c-sic heteroepitaxial growth on si by gsmbe, lower
@Article{takaoka98,
title = "Initial stage of Si{C} growth on Si(1 0 0) surface",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "183",
number = "1-2",
pages = "175--182",
title = "Low-temperature heteroepitaxial growth of cubic Si{C}
on Si using hydrocarbon radicals by gas source
molecular beam epitaxy",
- journal = "Journal of Crystal Growth",
+ journal = "J. Cryst. Growth",
volume = "150",
number = "Part 2",
pages = "934--938",
author = "Volker Heine and Ching Cheng and Richard J. Needs",
title = "The Preference of Silicon Carbide for Growth in the
Metastable Cubic Form",
- journal = "Journal of the American Ceramic Society",
+ journal = "J. Am. Ceram. Soc.",
volume = "74",
number = "10",
publisher = "Blackwell Publishing Ltd",
@Article{newman61,
title = "The diffusivity of carbon in silicon",
- journal = "Journal of Physics and Chemistry of Solids",
+ journal = "J. Phys. Chem. Solids",
volume = "19",
number = "3-4",
pages = "230--234",
title = "The iterative calculation of a few of the lowest
eigenvalues and corresponding eigenvectors of large
real-symmetric matrices",
- journal = "Journal of Computational Physics",
+ journal = "J. Comput. Phys.",
volume = "17",
number = "1",
pages = "87--94",
projects / lectures / latex.git / blobdiff