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[lectures/latex.git] / nlsop / nlsop_emrs_2004.tex

diff --git a/nlsop/nlsop_emrs_2004.tex b/nlsop/nlsop_emrs_2004.tex
index 7156e97..14df780 100644 (file)
--- a/nlsop/nlsop_emrs_2004.tex
+++ b/nlsop/nlsop_emrs_2004.tex
@@ -37,14 +37,14 @@
 
 \begin{center}
  {\large
-  F. Zirkelbach, M. Häberlen, J. K. N. Lindner, and B. Stritzker
+  F. Zirkelbach, M. Häberlen\footnote{corresponding author:\\email: maik.haeberlen@physik.uni-augsburg.de\\phone: +49-821-5983498\\fax: +49-821-5983425}, J. K. N. Lindner, and B. Stritzker
   \par
  }
 \end{center}
 
 \begin{center}
  {\scriptsize
-  Institute of Physics, University of Augsburg, Universitätsstrasse 1, D-86135 Augsburg, Germany
+  Institut für Physik, Universität Augsburg, Universitätsstrasse 1, D-86135 Augsburg, Germany
   \par
  }
 \end{center}
@@ -153,7 +153,7 @@ A simple model explaining the selforganization process of lamellar, amorphous pr
  \item XTEM image of a $Si$ sample implanted with $180 \, keV \, C^+$ ions at a dose of $4.3 \times 10^{17} \, cm^{-2}$ and a substrate temperature of $150 \,^{\circ} \mathrm{C}$. Lamellar and spherical amorphous inclusions are marked by $L$ and $S$.
  \item Schematic explaining the selforganization of amorphous $SiC_x$ precipitates and the evolution into ordered lamellae with increasing dose (see text).
  \item Nuclear and electronic stopping powers and concentration profile of $180 \, keV \, C^+$ ions implanted in $Si$ calculated by TRIM.
- \item Comparison of a simulation result and a XTEM image ($180 \, keV$ $C^+$ implantationinto silicon at $150 \,^{\circ} \mathrm{C}$ and a dose of $4.3 \times 10^{17} cm^{-2}$). Amorphous cells are white.
+ \item Comparison of a simulation result and a XTEM image ($180 \, keV$ $C^+$ implantation into silicon at $150 \,^{\circ} \mathrm{C}$ and a dose of $4.3 \times 10^{17} cm^{-2}$). Amorphous cells are white.
  \item Two identical simulation runs with diffusion switched off (left) and on (right).
  \item Two identical simulation runs with different diffusion rates $d_r$. All other parameters are as in Figure 5(b).
  \item Four simulation runs with different simulation parameter $p_s$. All other parameters are as in Figure 5(b).