+While first versions of this simulation, just covering a limit depth region of the target in which selforganization is observed, have already been discussed in \cite{me1,me2}, only results of the new version, which is able to model the whole depth region affected by the irradiation process, will be presented.
+
+A set of simulation parameters exists to properly describe the fluence dependent formation of the amorphous phase, as can be seen in Fig \ref{img:dose_cmp}.
+\ldots
+
+By simulation it is possible to determine the carbon concentration in crystalline, amorphous and both volumes.
+Fig. \ref{img:carbon_distr} \ldots
+
+Based on simulation runs a recipe is proposed to create broad distributions of lamellar structure.
+The starting point is a crystalline silcon target with a nearly constant carbon concentration of $10 \, at.\%$ starting from the surfcae downto $500 \, nm$, which can be achieved by multiple carbon implantation steps with energies between $180$ and $10 \, keV$ at a temperature $T=500 \, ^{\circ} \mathrm{C}$ to prevent amorphization \cite{sputter}.
+In a second step the target is irradiated with $2 \, MeV$ $C^+$ ions, which have a nearly constant energy loss and an essentially zero implantation profile in the affected depth region.
+The result is displayed in Fig. \ref{img:broad_lam}, showing already ordered structures after $s=100 \times 10^6$ steps corresponding to a fluence of $D=2.7 \times 10^{17} cm^{-2}$.
+The structure gets more defined with increasing fluence.
+According to recent studies \cite{photo} these structures are the starting point for materials showing high photoluminescence.
+
+\section{Summary and conclusion}
+
+Ion irradiation of solids at certain implantation conditions may result in a regular ordered formation of amorphous precipitates.
+The ordering process can be understood by the presented model, which is able to reproduce experimental observations by means of a Monte Carlo simulation code.
+Detailed information, like the distribution of carbon located in amorphous and crystalline volumes, is gained again shedding light on the selforganization process.
+Finally a technique is proposed to produce broad distributions of lamellar ordered structures.
+
+\begin{thebibliography}{20}
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+\bibitem{specht} E. D. Specht, D. A. Walko, S. J. Zinkle, Nucl. Instr. and Meth. B 84 (2000) 390.
+\bibitem{ishimaru} M. Ishimaru, R. M. Dickerson, K. E. Sickafus, Nucl. Instr. and Meth. B 166-167 (2000) 390.
+\bibitem{lamellar_inclusions} J. K. N. Lindner, M. Häberlen, M. Schmidt, W. Attenberger, B. Stritzker, Nucl. Instr. Meth. B 186 (2002) 206.
+\bibitem{model_joerg} J. K. N. Lindner, Nucl. Instr. Meth. B 178 (2001) 44.
+\bibitem{int_eng} W. J. Taylor, T. Y. Tan, U. Gösele, Appl. Phys. Lett. 62 (1993) 3336.
+\bibitem{ibic} J. Linnross, R. G. Elliman, W. L. Brown, J. Matter. Res. 3 (1988) 1208.
+\bibitem{ap_stab} E. F. Kennedy, L. Csepregi, J. W. Mayer, J. Appl. Phys. 48 (1977) 4241.
+\bibitem{eftem_maik} M. Häberlen, Bildung und Ausheilverhalten nanometrischer amorpher Einschlüsse in Kohlenstoff-implantierten Silizium, Diploma thesis, Augsburg, 2002 (in Germany).
+\bibitem{si_dens1} L. L. Horton, J. Bentley, L. Romana, A. Perez, C. J. McHargue, J. C. McCallum, Nucl. Instr. Meth. B 65 (1992) 345.
+\bibitem{si_dens2} W. Skorupa, V. Heera, Y. Pacaud, H. Weishart, in: F. Priolo, J. K. N. Lindner, A. Nylandsted Larsen, J. M. Poate (Eds.), New Trends in Ion Beam Processing of Materials, Eur. Mater. Res. Soc. Symp. Proc. 65, Part 1, Elsevier,Amsterdam, 1997,p. 114.
+\bibitem{trim} J. F. Ziegler, J. P. Biersack, U. Littmark, The Stopping and Range of Ions in Solids, Pergamon, New York, 1985.
+\bibitem{sputter} J. K. N. Lindner, Nucl. Instr. Meth. B 178 (2001) 44.
+\bibitem{me1} F. Zirkelbach, M. Häberlen, J. K. N. Lindner, B. Stritzker, Comp. Matter. Sci. 33 (2005) 310.
+\bibitem{me2} F. Zirkelbach, M. Häberlen, J. K. N. Lindner, B. Stritzker, Nucl. Instr. Meth. B 242 (2006) 679.
+\bibitem{photo} D. Chen, Z. M. Liao, L. Wang, H. Z. Wang, F. Zhao, W. Y. Cheung, S. P. Wong, Opt. Mater. 23 (2003) 65.
+\end{thebibliography}
+
+\newpage
+\section*{Figure Captions}
+
+\begin{enumerate}
+\item Cross-sectional transmission electron microscopy (XTEM) image of a $Si(100)$ sample implanted with $180 \, keV$ $C^+$ ions at a fluence of $4.3 \times 10^{17} \, cm^{-2}$ and a substrate temperature of $150 \, ^{\circ} \mathrm{C}$. Lamellar and spherical amorphous inclusions at the interface of the continuous amorphous layer are marked by L and S.
+\item Schematic explaining the selforganization of amorphous $SiC_x$ precipitates and the evolution into ordered lamellae with increasing fluence (see text).
+\item Comparison of simulation results and XTEM images ($180 \, keV$ $C^+$ implantation into silicon at $150 \, ^{\circ} \mathrm{C}$) for several fluence. Amorphous cells are white. Simulation parameters: $p_b=0.01$, $p_c=0.001$, $p_s=0.0001$, $d_r=0.05$, $d_v=1 \times 10^6$.
+\item Amorphous cell distribution and corresponding carbon implantation profile. The implantation profile shows the mean amount of carbon in amorphous and crystalline volumes as well as the sum for a fluence of $4.3 \times 10^{17} \, cm^{-2}$.
+\item Simulation result for a $2 \, MeV$ $C^+$ irradiation into silicon doped with $10 \, at. \%$ carbon by multiple implantation steps between $180$ and $10 \, keV$. $100 \times 10^6$ simulation steps correspond to a fluence of $2.7 \times 10^{17} \, cm^{-2}$.
+\end{enumerate}
+
+%\listoffigures
+
+\newpage
+\section*{Figures}
+
+\begin{figure}[!h]
+\begin{center}
+\includegraphics[width=14cm]{k393abild1_e.eps}
+\caption[foo]{}
+\end{center}
+\label{img:tem}
+\end{figure}
+
+\newpage
+\begin{figure}[!h]
+\begin{center}
+\includegraphics[width=14cm]{modell_ng_e.eps}
+\caption[foo]{}
+\end{center}
+\label{img:model}
+\end{figure}
+
+\newpage
+\begin{figure}[!h]
+\begin{center}
+\includegraphics[width=14cm]{dosis_entwicklung_all_e.eps}
+\caption[foo]{}
+\end{center}
+\label{img:dose_cmp}
+\end{figure}
+
+\newpage
+\begin{figure}[!h]
+\begin{center}
+\includegraphics[width=14cm]{ac_cconc_ver2_e.eps}
+\caption[foo]{}
+\end{center}
+\label{img:carbon_distr}
+\end{figure}
+
+\newpage
+\begin{figure}[!h]
+\begin{center}
+\includegraphics[width=14cm]{multiple_impl_e.eps}
+\caption[foo]{}
+\end{center}
+\label{img:broad_lam}
+\end{figure}