posic publications security checkin

[lectures/latex.git] / posic / publications / dpg2008_abstract.tex

diff --git a/posic/publications/dpg2008_abstract.tex b/posic/publications/dpg2008_abstract.tex
new file mode 100644 (file)
index 0000000..5856e1c
--- /dev/null
+++ b/posic/publications/dpg2008_abstract.tex
@@ -0,0 +1,54 @@
+\pdfoutput=0
+\documentclass[a4paper,11pt]{article}
+\usepackage[activate]{pdfcprot}
+\usepackage{verbatim}
+\usepackage{a4}
+\usepackage{a4wide}
+\usepackage[german]{babel}
+\usepackage[latin1]{inputenc}
+\usepackage[T1]{fontenc}
+\usepackage{amsmath}
+\usepackage{ae}
+\usepackage{aecompl}
+\usepackage[dvips]{graphicx}
+\graphicspath{{./img/}}
+\usepackage{color}
+\usepackage{pstricks}
+\usepackage{pst-node}
+\usepackage{rotating}
+
+\setlength{\headheight}{0mm} \setlength{\headsep}{0mm}
+\setlength{\topskip}{-10mm} \setlength{\textwidth}{17cm}
+\setlength{\oddsidemargin}{-10mm}
+\setlength{\evensidemargin}{-10mm} \setlength{\topmargin}{-1cm}
+\setlength{\textheight}{26cm} \setlength{\headsep}{0cm}
+
+\begin{document}
+
+% header
+\begin{center}
+ {\LARGE {\bf Molecular dynamics simulation study
+              of the silicon carbide precipitation process}\\}
+ \vspace{16pt}
+ \textsc{\Large \underline{F. Zirkelbach}$^1$, J. K. N. Lindner$^1$,
+         K. Nordlund$^2$, B. Stritzker$^1$}\\
+ \vspace{16pt}
+ $^1$ Experimentalphysik IV, Institut f"ur Physik, Universit"at Augsburg,\\
+ Universit"atsstr. 1, D-86135 Augsburg, Germany\\
+ \vspace{16pt}
+ $^2$ Accelerator Laboratory, Department of Physical Sciences,
+ University of Helsinki,\\
+ Pietari Kalmink. 2, 00014 Helsinki, Finland\\
+\end{center}
+
+\vspace{24pt}
+
+\section*{Abstract}
+The precipitation process of silicon carbide in heavily carbon doped silicon is not yet understood for the most part.
+High resolution transmission electron microscopy indicates that in a first step carbon atoms form $C-Si$ dumbbells on regular $Si$ lattice sites which agglomerate into large clusters.
+In a second step, when the cluster size reaches a radius of a few $nm$, the high interfacial energy due to the $SiC$/$Si$ lattice misfit of almost $20 \, \%$ is overcome and the precipitation occurs.
+A molecular dynamics simulation approach is used to gain information of the precipitation process on the atomic level.
+A newly parametrized Tersoff like bond-order potential is used to model the system appropriately.
+The present work discusses the first results gained by the molecular dynamics simulation.
+
+\end{document}