+Within the empirical approach, defect structures are modeled in a supercell of nine Si lattice constants in each direction consisting of 5832 Si atoms.
+Reproducing SiC precipitation is attempted by successive insertion of 6000 C atoms to form a minimal 3C-SiC precipitate with a radius of about \unit[3.1]{nm} within the Si host consisting of 31 unit cells (238328 atoms) in each direction.
+At constant temperature 10 atoms are inserted at a time.
+Three different regions inside the total simulation volume are considered for a statistically distributed insertion of C atoms.
+$V_1$ corresponds to the total simulation volume, $V_2$ to the size of the precipitate and $V_3$ holds the necessary amount of Si atoms of the precipitate.
+After C insertion, the simulation is continued for \unit[100]{ps} and cooled down to \unit[20]{$^{\circ}$C} afterwards.
+A Tersoff-like bond order potential by Erhart and Albe (EA) \cite{albe_sic_pot} has been utilized, which accounts for nearest neighbor interactions realized by a cut-off function dropping the interaction to zero in between the first and second nearest neighbor distance.
+The Berendsen barostat and thermostat \cite{berendsen84} with a time constant of \unit[100]{fs} enables the isothermal-isobaric ensemble.
+The velocity Verlet algorithm \cite{verlet67} and a fixed time step of \unit[1]{fs} is used to integrate the equations motion.
+Structural relaxation of defect structures is treated by the same algorithms at zero temperature.