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[lectures/latex.git]
/
posic
/
talks
/
defense.tex
diff --git
a/posic/talks/defense.tex
b/posic/talks/defense.tex
index
c6cb981
..
b26dd01
100644
(file)
--- a/
posic/talks/defense.tex
+++ b/
posic/talks/defense.tex
@@
-170,7
+170,7
@@
E\\
\centerslidesfalse
% skip for preparation
\centerslidesfalse
% skip for preparation
-\ifnum1=0
+
%
\ifnum1=0
% intro
% intro
@@
-285,18
+285,18
@@
Thermal conductivity [W/cmK] & 5.0 & 4.9 & 4.9 & 1.5 & 1.3 & 22 \\
\end{tabular}
\begin{pspicture}(0,0)(0,0)
\end{tabular}
\begin{pspicture}(0,0)(0,0)
-\psellipse[linecolor=green](5.7,2.10)(0.4,0.5)
+\psellipse[linecolor=green](5.7,2.10)(0.4,0.5
3
)
\end{pspicture}
\begin{pspicture}(0,0)(0,0)
\end{pspicture}
\begin{pspicture}(0,0)(0,0)
-\psellipse[linecolor=green](5.6,0.92)(0.4,0.2)
+\psellipse[linecolor=green](5.6,0.92)(0.4,0.2
3
)
\end{pspicture}
\begin{pspicture}(0,0)(0,0)
\end{pspicture}
\begin{pspicture}(0,0)(0,0)
-\psellipse[linecolor=red](10.45,0.45)(0.4,0.2)
+\psellipse[linecolor=red](10.45,0.45)(0.4,0.2
3
)
\end{pspicture}
\end{slide}
\end{pspicture}
\end{slide}
-\fi
+
%
\fi
% fabrication
% fabrication
@@
-331,10
+331,20
@@
SiC thin films by MBE \& CVD
\begin{picture}(0,0)(-310,-20)
\includegraphics[width=2.0cm]{cree.eps}
\end{picture}
\begin{picture}(0,0)(-310,-20)
\includegraphics[width=2.0cm]{cree.eps}
\end{picture}
-{\color{red}\scriptsize Mismatch in thermal expansion coeefficient
- and lattice paramater}
-\vspace{-0.2cm}
+\vspace{-0.5cm}
+
+\begin{center}
+\color{red}
+\framebox{
+{\footnotesize\color{black}
+ Mismatch in \underline{thermal expansion coeefficient}
+ and \underline{lattice parameter} w.r.t. substrate
+}
+}
+\end{center}
+
+\vspace{0.1cm}
{\bf Alternative approach}\\
Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
{\bf Alternative approach}\\
Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
@@
-363,9
+373,11
@@
Ion beam synthesis (IBS) of burried 3C-SiC layers in Si\hkl(1 0 0)
}
\begin{minipage}{5.5cm}
\begin{center}
}
\begin{minipage}{5.5cm}
\begin{center}
-{\
small
+{\
footnotesize
No surface bending effects\\
No surface bending effects\\
-$\Rightarrow$ Synthesis of large area SiC films possible
+High areal homogenity\\[0.1cm]
+$\Downarrow$\\[0.1cm]
+Synthesis of large area SiC films possible
}
\end{center}
\end{minipage}
}
\end{center}
\end{minipage}
@@
-438,9
+450,9
@@
$\Rightarrow$ Synthesis of large area SiC films possible
\end{slide}
\end{slide}
-\end{document}
+
%
\end{document}
% temp
% temp
-\ifnum1=0
+
%
\ifnum1=0
% contents
% contents
@@
-2298,4
+2310,4
@@
Investigation of structure \& structural evolution \ldots
\end{document}
\end{document}
-\fi
+
%
\fi